Canon Kabushiki Kaisha

Tokyo Institute of Technology

Mitsubishi Heavy Industries Limited

Nippon Steel Corporation

Tachi-S Co., Ltd.

Denso Corporation

The University of Tokyo

Mitsubishi Hitachi Power Systems, Ltd.

Tatsuya Iwasaki

Tohru Den

Toru Den

Masato Yamanobe

Toshihiko Takeda

Keisuke Yamamoto

Hidetoshi Suzuki

Ichiro Nomura

Hisaaki Kawade

Toshikazu Ohnishi

Yoshihiro Ohashi

Hideo Hosono

Ryo Hayashi

Tatsuya Saito

Kenji Nomura

Yasuhiro Hamamoto

Toshio Kamiya

Yoshifumi Iwasaki

Takeo Tsukamoto

Nobuhiro Yasui

Takeo Ono

Hidetoshi Nojiri

Taiko Motoi

Takashi Sonoda

Masafumi Sano

Masataka Yamashita

Hisato Yabuta

Sotomitsu Ikeda

Yoshiyuki Osada

Hideya Kumomi

Aoji Isono

Miki Ueda

Naho Itagaki

Tomoyuki Oike

Amita Goyal

Toshiaki Aiba

Katsuya Oikawa

Kazuya Higashi

Shoichi Harada

Ayanori Endo

Hidekazu Sueno

Koji Watari

Hiroshi Ohkura

Eiji Yamaguchi

Katsuhiko Shinjo

Nobutomo Takagi

Hiroaki Toshima

Masahiro Okuda

Masatoshi Watanabe

Noritake Suzuki

Yasuyuki Todokoro

Shunsuke Hayashi

Katsuyuki Hoshino

Masaya Ogino

Hidenori Takagi

Yuya Fukunaga

Masakazu Takeda

Keita Myochin

Izumi Tabata

Yoshinobu Nakamura

Mitsuru Tsukada

Norihisa Narita

Sumio Toyofuku

Kazuma Nishizawa

Toshishige Ai

Hiroshi Kikukawa

A carburized shaft part having a predetermined composition, a C content at a surface layer part of a mass % of 0.60 to 1.00%, at least one hole at an outer circumferential surface, a total volume ratio of martensite and retained austenite of 97% or more at a structure at a position of a 1 mm depth from the outer circumferential surface in an axial direction of the hole and a position of a 20 &#x3bc;m depth from the surface of the hole, a maximum retained austenite volume ratio (R1) of 10.0 to 30.0% at a position of a 1 mm depth from the outer circumferential surface in the axial direction of the hole and a range up to a 200 &#x3bc;m depth from the surface of the hole, and a retained austenite reduction ratio of 20% or more found from R1 and the retained austenite volume ratio (R2) at a position of a 1 mm depth from the outer circumferential surface in the axial direction of the hole and a position of a 20 &#x3bc;m depth from the surface of the hole by the formula (A): &#x394;&#x3b3;=(R1&#x2212;R)/R1&#xd7;100.

Carburized shaft part

A shaft part excellent in static torsional strength and torsional fatigue strength containing, by mass %, essential elements of C: 0.35 to 0.70%, Si: 0.01 to 0.40%, Mn: 0.5 to 2.6%, P: 0.050% or less, S: 0.005 to 0.020%, Al: 0.010 to 0.050%, N: 0.005 to 0.025%, and O: 0.003% or less, further containing optional elements, having a balance of Fe and impurities, having a chemical composition satisfying formula (1), having at least one hole at an outer circumferential surface, having a volume ratio (R1) of 4 to 20% of retained austenite at a position of a 2 mm depth from the outer circumferential surface, having a volume ratio of retained austenite at a position of a 2 mm depth from the outer circumferential surface in an axial direction of the hole and at a position of a 20 &#x3bc;m depth from the surface of the hole as R2, and having a reduction rate &#x394;&#x3b3; of 40% or more of retained austenite found by the formula (A): &#x394;&#x3b3;=[(R1&#x2212;R2)/R1]&#xd7;100: Formula (1): 15.0&#x2264;25.9C+6.35Mn+2.88Cr+3.09Mo+2.73Ni&#x2264;27.2 (Notations of elements in formula are contents of the elements).

Shaft part

A vehicle seat () has a seat cushion () and a seat back (), which are affixed to the body of a vehicle. The seat back () has: a first member () which is formed in a plate-like shape; and a second member () with a hat-shaped cross-section, which is configured so that a flange section () is in contact with one surface, in a thickness direction, of the first member (). A center bead () is provided at the center portion of the first member (). The center bead () is configured so that a longitudinal end of the center bead () and the second member () are overlapped in a plan view viewed in the thickness direction of the first member (). As a result, the first member () of the seat back () is prevented from being deformed at the longitudinal end of the center bead ().

Vehicle seat

A cooling system includes: a high pressure bleed line configured to bleed high pressure compressed air from a first bleed position of a compressor and to send the air to a first hot part; a low pressure bleed line configured to bleed low pressure compressed air from a second bleed position of the compressor and to send the air to a second hot part; an orifice provided in the low pressure bleed line; a connecting line configured to connect the high pressure bleed line and the low pressure bleed line; a first valve provided in the connecting line; a bypass line configured to connect the connecting line and the low pressure bleed line; and a second valve provided in the bypass line.

Cooling system for gas turbine, gas turbine equipment provided with same, and parts cooling method for gas turbine

A seat for a vehicle includes a seat cushion, a seat back, and a reclining device configured to allow the seat back to be tilted to the seat cushion. The seat back includes a back frame having an opening and a pipe frame comprising a pipe member, and the pipe frame includes a distal end part. The lower part of the pipe frame extends through the opening such that the distal end part is located inside a space defined by the back frame and the reclining device, and the lower part of the pipe frame is fixed to the back frame at the opening. Rotation center of the reclining device is set so as to be aligned with axial center of the lower part of the pipe frame.

Seat for vehicle

A solar heat turbine system includes: a compressor which compresses a working fluid, and generates a high-pressure working fluid; a solar heat receiver which heats the high-pressure working fluid with solar heat, and which generates a high-temperature working fluid; a turbine which is rotationally driven by the high-temperature working fluid; a restriction mechanism which restricts a flow of at least one of the high-pressure working fluid and the high-temperature working fluid; a rotation interlocking mechanism which rotationally drives the compressor so as to interlock with the turbine; a bleed mechanism which causes the high-pressure working fluid which is in a process of being generated in the compressor to be bled as a bled working fluid; and a system control unit which causes the bleed mechanism to execute bleeding after the restriction mechanism is caused to restrict.

Solar heat turbine system, and device and method for controlling said system

A solar thermal power generation facility is provided with turbine bypass piping () which makes some of compressed air from a compressor () bypass a turbine (), a turbine bypass valve () which adjusts the flow rate of the compressed air flowing through the turbine bypass piping (), and a control device () which controls the rotational torque of a turbine rotor () by opening the turbine bypass valve () before a rotor rotational speed reaches a rated rotational speed in a speeding-up process of the rotor rotational speed by a start-up device () and adjusting the flow rate of the compressed air that is made to bypass, by the turbine bypass valve (). The control device () instantaneously fully closes the turbine bypass valve () at the time of incorporation in which a power generator () is connected to an electric power system (S).

Solar thermal power generation facility and method of starting up same

A method for preparing a bismuth iodide article includes heat-treating bismuth iodide at a temperature less than the melting point of bismuth iodide in an atmosphere containing iodine.

Method for preparing bismuth iodide article and method for manufacturing radiation detecting element

Provided is a radiation detector, including: a two-dimensional light receiving element including a plurality of pixels; and a scintillator layer having multiple scintillator crystals two-dimensionally arranged on a light receiving surface of the two-dimensional light receiving element, in which: the scintillator crystal includes two crystal phases, which are a first crystal phase including a material including a plurality of columnar crystals extending in a direction perpendicular to the light receiving surface of the two-dimensional light receiving element and having a refractive index n, and a second crystal phase including a material existing between the plurality of columnar crystals and having a refractive index n; and a material having a refractive index nis placed between adjacent scintillator crystals, the refractive index nsatisfying a relationship of one of n&#x2266;n&#x2266;nand n&#x2266;n&#x2266;n.

Radiation detector

Provided is a radiation detecting device, including: a scintillator which emits light when radiation is irradiated thereto; and a photosensor array having light receiving elements for receiving the emitted light which are two-dimensionally arranged, in which: the scintillator has a phase separation structure for propagating the light emitted inside the scintillator in a light propagating direction, the phase separation structure being formed by embedding multiple columnar portions formed of a first material in a second material; the radiation is irradiated to the scintillator from a direction which is not in parallel to the light propagating direction; and the light emitted inside the scintillator is propagated through the scintillator in the light propagating direction and is received by the photosensor array which is placed so as to face an end face of the scintillator.

Radiation detecting device

Provided is a radiation detecting element, including: a semiconductor layer including a tin oxide crystal; and a detecting unit configured to detect, as an electrical signal, charges generated in the semiconductor layer when the semiconductor layer is irradiated with radiation, in which a resistivity of the semiconductor layer is 10&#x3a9;&#xb7;cm or more.

Radiation detecting element using oxide crystal and method of manufacturing oxide crystal

A thin film transistor includes a gate electrode, a gate insulation layer, a channel layer, a source electrode, and a drain electrode formed on a substrate, in which: the channel layer contains indium, germanium, and oxygen; and the channel layer has a compositional ratio expressed by In/(In+Ge) of 0.5 or more and 0.97 or less.

Thin film transistor using an oxide semiconductor and display

A thin-film transistor including a channel layer being formed of an oxide semiconductor transparent to visible light and having a refractive index of nx, a gate-insulating layer disposed on one face of the channel layer, and a transparent layer disposed on the other face of the channel layer and having a refractive index of nt, where there is a relationship of nx&#x3e;nt. A thin-film transistor including a substrate having a refractive index of no, a transparent layer disposed on the substrate and having a refractive index of nt, and a channel layer disposed on the transparent layer and having a refractive index of nx, where there is a relationship of nx&#x3e;nt&#x3e;no.

Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer

A laminated structure comprises a first layer comprising a crystal with six-fold symmetry, and a second layer comprising a metal oxynitride crystal formed on the first layer The second layer comprises at least one element selected from the group consisting of In, Ga, Si, Ge and Al, N, O and Zn, as main elements, and has in-plane orientation.

Substrate for growing wurtzite type crystal and method for manufacturing the same and semiconductor device

Provided is a light-emitting film having controllable resistivity, and a high-luminance light-emitting device, which can be driven at a low voltage, using such light-emitting film. The light-emitting film includes Cu as an addition element in a zinc sulfide compound which is a base material, wherein the zinc sulfide compound includes columnar ZnS crystals, and sites formed of copper sulfide on a grain boundary where the ZnS crystals are in contact with each other.

Method for producing light-emitting film and light-emitting device

Growing community of inventors

Machida, Japan

Tatsuya Iwasaki