Mitsubishi Denki Kabushiki Kaisha

Tatsuya Iwasa

Masao Oda

Takayuki Inoue

Kiyoshi Arai

Yoshio Takagi

Kazuo Yoshida

Yoshiyuki Goto

Yoshimi Kinoshita

Katsuhisa Kitano

Noriyuki Mizuta

Toyomi Osige

It is an object of the present invention to obtain a power semiconductor device with small size and high reliability in power semiconductor devices having integral structure of case and external connection terminals. A dummy pad (42) having no electric connection with other parts is provided and a terminal end of a connecting wire (46) connecting by sequentially bonding an exposed surface of a connection electrode (43) and a bonding pad (41) of a semiconductor element (40) is bonded thereto. The semiconductor device can be miniaturized without deteriorating electric characteristics and reliability of the semiconductor elements.

Semiconductor device having integral structure of case and external

A semiconductor film production apparatus includes a reaction vessel for containing a substrate and including a gas supply port for supplying a reaction gas to the vessel, a gas discharge port for discharging the reaction gas from the vessel after reaction, and a light-transmitting glass window; a light source disposed outside the reaction vessel for irradiating a substrate in the reaction vessel through the light-transmitting glass window to heat the substrate; a cylindrical substrate holder disposed in the reaction vessel for holding the substrate with a first surface facing the light source and a second surface, opposed to the first surface, exposed to the reaction gas; a ring plate having a central opening with an area smaller than the substrate and an outside diameter dividing the reaction vessel into two compartments, the ring plate contacting the first surface of the substrate; a carrier gas supply port for introducing a carrier gas between the substrate and the light-transmitting glass window; and a reaction gas supply nozzle disposed in the substrate holder connected to said gas supply port and opposing the second surface of the substrate.

Apparatus for producing semiconductor film

Method of forming a thin film on a substrate by CVD (Chemical Vapor Deposition) method and an apparatus therefor, wherein a first gas is supplied from a reaction gas supply port in a reaction chamber, and an active species produced by exciting a second gas are supplied from an active species supply port in the reaction chamber, and a thin film is formed on the substrate by reaction of the first reaction gas and the active species, since a metal porous plate having a number of small holes is installed close to the substrate between the active species supply port and a heater so as to enclose at least the substrate and the active species supply port, the precursor forming reaction is limited to position on the surface of the substrate and diffusion of the precursor to the outer circumferential portion and the inner wall of the reaction chamber is prevented, thereby the low dust producing process to advance the thin film forming reaction is obtained without generating the reaction product of fine particle form which may cause the dust producing.

Method and apparatus for forming thin film

Wire harness

A connection wire manufacturing system is provided in which a number of pairs of press-connecting terminals are formed in a hoop material, each being coupled at the heads with each other, and the hoop material with the pairs of press-connecting terminals is transferred to a press-connecting step where those pairs of terminals are separated into individual pairs of terminals and those individual ones are press-connected to connection wires with given lengths properly prepared into a continuous connection wire line which is allowed to be taken up by a take-up drum.

System for manufacturing connection wires

Growing community of inventors

Amagasaki, Japan

Tatsuya Iwasa