Daikin Industries, Ltd.

Panasonic Corporation

Tatsuya Hirata

Hirokazu Aoyama

Tatsuya Otsuka

Shouzi Tanaka

Ryohei Miyagawa

Yoshinori Tanaka

Eiji Seki

Takashi Shibanuma

Tomohiro Isogai

Motonari Katsuno

Jun Miki

Hitoshi Yoshimi

Kouzou Noda

Kazunari Koga

Kyohiro Kan

There is provided a process for the production of iodine pentafluoride which avoids the problems of the production process of iodine pentafluoride of the prior art as much as possible, and which carries out the reaction of fluorine and iodine moderately, so that iodine pentafluoride is produced more safely and more productively. In the process for the production of iodine pentafluoride by reacting fluorine and iodine, fluorine is supplied to the gas phasewhich is adjacent to the liquid phaseof iodine pentafluoride which contains iodine.

Process for production of iodine pentafluoride

A solid-state imaging device of the present invention includes: a semiconductor substrate including a first region of a first conductivity type; a signal accumulation region of a second conductivity type formed within the first region; a gate electrode formed above the first region; a drain region of a second conductivity type formed on the first region; an isolation region having insulation properties, which is formed to surround a region where the signal accumulation region, the gate electrode, and the drain region are formed; a first conductivity type dopant doping region formed in contact with a side face and a bottom face of the isolation region, the first conductivity type dopant doping region having a higher dopant concentration than the first region; and a second conductivity type dopant doping region formed in the first region, under an end of the gate electrode in a gate width direction.

Solid-state imaging device and manufacturing method of the same

A solid-state image sensing apparatus has a signal storage portion of a second conductivity type provided within a substrate, a surface shield layer of the first conductivity type provided in a surface portion of the substrate which is located above the signal storage portion, a gate electrode provided over the substrate in adjacent relation to at least one end of the signal storage portion, and a drain region of the second conductivity type provided in a surface portion of the substrate which is on the side opposite to the surface shield layer when viewed from the gate electrode. A read control layer of the first conductivity type is further provided in a surface portion of the substrate which is located under the gate electrode in adjacent relation to one end of the surface shield layer.

Solid-state image sensing apparatus and fabrication method thereof

A silicide layer (first silicide layer, second silicide layer) is laminated on top laminate surfaces of gates of a transmission transistor and a reset transistor, respectively. Each of the first silicide layer and the second silicide layer respectively formed on each of the gates extends in a direction along the main surface of the semiconductor substrate among at least a portion of a plurality of image pixels, connecting gates with one another among the respective image pixels. On the other hand, a signal outputter is not in contact with any silicide layers, has the top laminate surface that is covered with an insulating layer, and is connected with other transistors via a metal wiring layer.

Solid-state imaging device having wiring layer which includes lamination of silicide layer in order to reduce wiring resistance, and manufacturing method for the same

A solid catalyst used in, for example, production of a perfluoroalkyl iodide telomer is effectively and continuously recovered and the recovered catalyst is continuously recycled to the reactor for reuse. A slurry containing a reaction product and the catalyst is drawn from the reaction system, and the catalyst in the drawn slurry is classified by means of a hydrocyclone, whereby a high-concentration slurry whose catalyst concentration is higher than that of the drawn slurry and a low-concentration slurry whose catalyst concentration is lower than that of the drawn slurry are obtained, and the high-concentration slurry is recycled to the reaction system.

Process and unit for production of perfluoroalkyl iodide telomers

In an element for a MOS type solid-state imaging device, a leakage current caused by a stress generated in a vicinity of an element isolation region having an STI structure is reduced. The element for the MOS type solid-state imaging device comprises: a signal accumulation regionof a second conductivity type, provided in an interior of a semiconductor substrate or wellof a first conductivity type, for accumulating a signal charge generated by performing photoelectric convention; a gate electrodeprovided on the semiconductor substrate or wella drain regionof a second conductivity type, provided on a surface portion, of the semiconductor substrate or wellon which the gate electrode is formed; and an element isolation regionprovided on the surface portion, of the semiconductor substrate or wellon which the gate electrode is formed. The element isolation regionhas the STI structure, and a cavityis formed in an interior of the element isolation region

Element for solid-state imaging device

The present invention provides a method for isolating and purifying 1,1,1,2,2-pentafluoroethyl iodide or hydrogen fluoride from a mixture of 1,1,1,2,2-pentafluoroethyl iodide and hydrogen fluoride, characterized by distilling an azeotropic mixture of 1,1,1,2,2-pentafluoroethyl iodide and hydrogen fluoride from a mixture containing 1,1,1,2,2-pentafluoroethyl iodide and hydrogen fluoride either after liquid&mdash;liquid separation when the mixture is heterogeneous or directly when the mixture is homogeneous to obtain 1,1,1,2,2-pentafluoroethyl iodide or hydrogen fluoride from the bottom of the distillation column.

Azeotropic mixture of perfluoroalkyl iodide and hydrogen fluoride, and method for isolating and purifying perfluoroalkyl iodides

The present invention provides a method for isolating and purifying 1,1,1,2,2-pentafluoroethyl iodide or hydrogen fluoride from a mixture of 1,1,1,2,2-pentafluoroethyl iodide and hydrogen fluoride, characterized by distilling an azeotropic mixture of 1,1,1,2,2-pentafluoroethyl iodide and hydrogen fluoride from a mixture containing 1,1,1,2,2-pentafluoroethyl iodide and hydrogen fluoride either after liquid-liquid separation when the mixture is heterogeneous or directly when the mixture is homogeneous to obtain 1,1,1,2,2-pentafluoroethyl iodide or hydrogen fluoride from the bottom of the distillation column.

The present invention provides a new industrial process for producing perfluoroalkanes in order to overcome the problems of processes for producing perfluoroalkanes in the prior art. The process of the present invention is a process for producing a perfluoroalkane corresponding to a general formula Rf-F (wherein Rf- is a perfluoroalkyl group represented by F(CF,),&mdash; and n is an integer of 2 to 10) by contacting a perfluoroalkyl iodide with gaseous fluorine to cause a reaction therebetween, wherein the contact is made in the presence of the liquid compound which is at least one liquid which is substantially inert to the perfluoroalkyl iodide and gaseous fluorine under the condition of the process and which is selected from a perfluoro-compound, a chlorofluoro-compound, and hydrogen fluoride.

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Osaka, Japan

Tatsuya Hirata