Sumitomo Electric Industries, Limited

Tatsuya Hashinaga

Masanori Nishiguchi

Yutaka Moriyama

Kenji Otobe

Gaku Ishii

Ken-ichiro Matsuzaki

Harutoshi Tsuji

Hideki Tango

Ryoji Sakamoto

A high frequency amplifier includes an asymmetric Doherty amplifier configured to amplify a high frequency signal having a wavelength λ, the high frequency signal being input, and the asymmetric Doherty amplifier including a carrier amplifier and a peak amplifier, the peak amplifier being configured to start an amplifying operation when an output of the carrier amplifier reaches a saturation region and having a saturation output different from a saturation output of the carrier amplifier, a driver amplifier configured to drive the asymmetric Doherty amplifier, a branch circuit configured to branch the high frequency signal amplified by the driver amplifier into an input path on a peak amplifier side and an input path on a carrier amplifier side, a phase adjustment circuit configured to delay either a phase of a signal input to the peak amplifier or a phase of a signal input to the carrier amplifier, the phase adjustment circuit being provided on either the input path on the peak amplifier side or the input path on the carrier amplifier, a first substrate on which the carrier amplifier and the peak amplifier are mounted, and a second substrate on which the driver amplifier, the branch circuit, and the phase adjustment circuit are mounted. An input terminal of the driver amplifier and an input terminal of the carrier amplifier are disposed at positions where the input terminal of the driver amplifier and the input terminal of the carrier amplifier project to each other when the second substrate is stacked on the first substrate. An electrical length from the input terminal of the driver amplifier to an output terminal of the carrier amplifier is set to a phase of (2n+1)×π, where n is an integer greater than or equal to 0.

High frequency amplifier

A high-frequency amplifier includes a driver amplifier, a Doherty amplifier including carrier and peak which amplify the driver amplifier output, a second substrate laminated on a first substrate, and a base member mounted with the first and second substrates. The driver amplifier is mounted on the second substrate, and the carrier and peak amplifiers are mounted on the first substrate. A front surface of the driver amplifier opposes the first substrate, and a back surface of the driver amplifier is separated from the first substrate. Back surfaces of the carrier and peak amplifiers contact the base member, and the back surface of the driver amplifier connects to an interconnect layer disposed on the second substrate and connected to one end of a via penetrating the second and first substrates, and the other end of the via connects to the base member.

High-frequency amplifier

A high frequency amplifier includes an asymmetrical Doherty amplifier having a carrier amplifier, a peak amplifier, a branch circuit, and a phase adjusting circuit, a driver amplifier, and a base member mounting a first circuit board mounting the driver amplifier, the carrier amplifier, and the peak amplifier and a second circuit board mounting the circuits. The branch circuit divides a path of a RF signal into input paths of the peak and carrier amplifiers. The driver amplifier, the carrier amplifier, and the peak amplifier have rear surfaces in contact with the base member. The electrical length from the output terminal of the driver amplifier to the input terminal of the peak amplifier, when converted based on a phase of the signal, is from (2n+1)×π−π/4 to (2n+1)×π+π/4, where n is an integer greater than or equal to zero.

An amplifier circuit includes a first amplifier that amplifies a high frequency signal, and a load circuit that changes a load impedance of the first amplifier without being controlled by an external circuit so that a saturation power at a first temperature is higher than a saturation power at a second temperature lower than the first temperature, and an efficiency at the first temperature is lower than an efficiency at the second temperature.

Amplifier circuit

A high frequency amplifier includes an asymmetrical Doherty amplifier having a carrier amplifier, a peak amplifier, a branch circuit, and a phase adjusting circuit, a driver amplifier, and a base member mounting a first circuit board mounting the driver amplifier, the carrier amplifier, and the peak amplifier and a second circuit board mounting the circuits. The branch circuit divides a path of a RF signal into input paths of the peak and carrier amplifiers. The driver amplifier, the carrier amplifier, and the peak amplifier have rear surfaces in contact with the base member. The electrical length from the output terminal of the driver amplifier to the input terminal of the peak amplifier, when converted based on a phase of the signal, is from (2n+1)×π−α/4 to (2n+1)×π+π/4, where n is an integer greater than or equal to zero.

Included are: a first power sourceconfigured to output a voltage required for a first gate bias voltage for turning a power amplifierto an ON state; a second power sourceconfigured to output a voltage required for a second gate bias voltage for turning the power amplifierto an OFF state; a changeover switchconnected between the first power sourceand the power amplifierand configured to supply either the first gate bias voltage or the second gate bias voltage to the power amplifierby switching a state between the first power sourceand the power amplifierto either an open state or a short-circuit state on the basis of a control signal related to on-off control of the power amplifier; and a resistance value varying unitconnected between the second power sourceand the power amplifierand configured such that a resistance value thereof is variable.

Bias circuit

A multistage amplifier includes: N amplifiers (N&#x2265;2), a (k+1)amplifier cascaded to a kamplifier (1&#x2264;k&#x2264;N&#x2212;1), and each amplifier being configured to amplify a multicarrier signal; and an extraction circuit including an input and an output, the input being connected to an output of a jamplifier (1&#x2264;j&#x2264;N&#x2212;1), and the output providing a compensation signal to an input of a (j+1)amplifier or an output of the (j+1)amplifier. The extraction circuit includes a filter circuit connected to the output of the jamplifier that extracts a distortion frequency component of n times a differential frequency f2&#x2212;f1 (n&#x2265;1), a phase shifter cascaded to the filter circuit that shifts a phase of the component, and a gain adjustment circuit cascaded to the phase shifter that adjusts an amplitude of the component and generates the compensation signal.

Multistage amplifier

The present invention relates to a field-effect transistor which is improved such that the linearity of mutual conductance g,is flattened over a wider range of gate bias. This field-effect transistor is a MESFET comprising a channel layer and a cap layer in Schottky-contact with a gate electrode. In particular, between the channel layer and the cap layer, one or more auxiliary layers having a doping concentration lower than that of the channel layer and higher than that of the cap layer are provided. The doping concentration of one or more auxiliary layers is set such that the doping profile of a laminated structure constituted by the channel layer, one or more auxiliary layers, and cap layer exponentially lowers from the channel layer toward the cap layer. According to this configuration, the depletion layer can effectively be controlled over a wider range of gate bias, the long gate effect and the like are suppressed, and the linearity of mutual conductance g,is improved.

Field-effect transistor

A power amplifying module has a package formed by welding a package bottom plate being a package substrate of a generally flat plate shape with a cap being a metal package cap of a generally rectangular box shape. A wiring substrate of a generally flat plate shape is placed on the package bottom plate and this wiring substrate is covered by the cap. There are two through holes formed in the wiring substrate and two heat spreaders of a generally flat plate shape are positioned in portions exposed through the through holes on the package bottom plate. Semiconductor devices sealed with a resin or the like are set by soldering or the like on respective surfaces of these heat spreaders.

Power amplifying module

In an electronic component, an electronic circuit board having an electronic element mounted on the major surface is mounted on a metal frame. The electronic circuit board is covered with a metal lid fitted on the metal frame and contained in a metal package constituted by the metal frame and the metal lid. At least at one notched portion is formed at least at one end of the electronic circuit board. A positioning projection formed on the metal frame engages with the notched portion. The mechanical precision and electrical characteristics are improved, so that an electronic component particularly excellent in high-frequency characteristics, which can be manufactured in simple manufacturing process, can be obtained.

Electronic component contained in a metal package

A power amplifying module has at least one heat spreader mounted on a package substrate and exposed through a through hole provided in a wiring substrate, and at least one semiconductor chip forming a power amplifying circuit is mounted in a bare chip state on a surface of the at least one heat spreader as electrically connected to an electronic circuit pattern on the wiring substrate. Each of the package substrate and at least one heat spreader is made of a material having a thermal conductivity larger than that of a material making the wiring substrate. The module thus formed can emit the heat generated by the power amplifying module to the outside at high efficiency, thus achieving the power amplifying module with high performance and high reliability.

A testing apparatus which assures that a constant acceleration test and an AC continuous operation test can be simultaneously conducted on semiconductor devices to be tested. The testing apparatus includes a rotatable turntable with semiconductor devices to be tested mounted thereon, rotary terminals electrically connected to connection pins of the semiconductor devices mounted on the turntable and adapted to rotate together with the turntable, and stationary terminals adapted to intermittently or continuously slidably contact the rotary terminals while the turntable is rotated.

Semiconductor device testing apparatus

A burn-in apparatus used in burn-in tests includes a burn-in test chamber for accommodating a plurality of semiconductor devices to be tested. Also, the burn-in apparatus includes measuring means for detecting electric characteristics of temperature sensors built in the respective semiconductor devices to individually measure junction temperatures of the semiconductor chips incorporated in the respective semiconductor devices, and laser beam irradiating means or electric heating members. The laser irradiating means or the heating members are controlled by control means, based on outputs of the measuring means. Thus, the junction temperatures are maintained in a set junction temperature range, and the screening accuracy can be improved.

Growing community of inventors

Yokohama, Japan

Tatsuya Hashinaga