Toshiba Memory Corporation

Kioxia Corporation

Tatsuya Fujishima

Masayuki Shishido

Tomonori Kajino

Nozomi Kido

Taichi Iwasaki

Nobuhito Kuge

Akira Kuramoto

Hideto Onuma

A semiconductor memory device according to an embodiment includes a substrate, a source line, word lines, a pillar, and a first member. The first member is provided to penetrate the source line. The first member includes a first portion which is far from the substrate, and a second portion which is near the substrate. The first member includes a first contact and a first insulating film. The first contact is provided to extend from the first portion to the second portion. The first contact is electrically connected to the substrate. The first insulating film insulates the source line from the first contact. The first member includes a stepped portion at a boundary part between the first portion and the second portion.

Semiconductor memory device

According to one embodiment, in a semiconductor device, a stacked body is disposed above a substrate. In the stacked body, a conductive film and an insulating layer are alternately disposed in a stacking direction. A semiconductor columnar member penetrates the stacked body in a stacking direction. An insulating film surrounds the semiconductor columnar member. The insulating film penetrates the stacked body in the stacking direction. A pattern is disposed at a position adjacent to or close to a region. The region includes a penetration plug. The penetration plug extends from a position same as or above an upper end of the stacked body to a position below a lower end of the stacked body in the stacking direction. The pattern has a quadrangular or disjoined quadrangular shape.

Semiconductor device and method of manufacturing semiconductor device

A semiconductor memory device includes a stacked body including a plurality of word lines; a semiconductor layer extending through the word lines; a memory cell provided at a part where the semiconductor layer crosses one of the word lines, the memory cell including a plurality of cell layers, the cell layers including a first insulating layer; and at least one of a first structural body and a second structural body provided around the stacked body. The first structural body includes a plurality of monitor layers including same materials respectively as materials of the cell layers. The second structural body includes a first electrode, a second electrode and an insulating body positioned between the first electrode and the second electrode. The insulating body includes same material as a material of the first insulating layer, and has almost the same thickness as a thickness of the first insulating layer.

Semiconductor memory device and method for manufacturing same

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Yokkaichi, Japan

Tatsuya Fujishima