Matsushita Electric Industrial Co., Ltd.

Tatsuo Yoshioka

Yutaka Miyata

Tetsuya Kawamura

Mamoru Furuta

Hiroshi Sano

Hiroshi Tsutsu

Shigeki Maegawa

A thin film on a substrate is patterned so as to include an area in which a thin film transistor is to be formed and an area of another patterned thin film or a semiconductor device, and so as to have a size larger than the total size of the areas. Next, the patterned thin film is annealed. After the annealing, a part of the inside area of the patterned thin film is patterned. The part of the thin film is used for forming a thin film transistor.

Method for processing a thin film using an energy beam

In a method of manufacturing a thin film transistor, when impurity ions are introduced in a channel region between source and drain regions in a semiconductor layer, an insulator layer is first formed on the semiconductor layer. Then, impurity ions generated on high frequency discharge are introduced through the insulator layer into the semiconductor layer under a specified acceleration voltage. Then, the introduction depth of impurities and the amount of the impurities to be introduced in the channel region can be controlled or the threshold voltage of the thin film transistor can be controlled. This method can be applied to a large substrate.

Method of manufacturing thin film transistor

A laser beam is irradiated and scanned on a substrate of a liquid crystal display device of an active matrix type. Pairs of electrons and holes caused by the known internal photoelectric effect are produced by irradiation of the laser beam to electrical conductive thin films including silicon layered on the substrate, and pass through a defective part of short circuit in an intersection of the plural electrical conductive thin films, and thereby a current flowing through the intersection increases and a position of the defect determined on the basis of the scanning position of the laser beam and the increase of the current.

Defect detection and defect removal apparatus of thin film electronic

An active matrix substrate includes a transparent substrate, pairs each having an n-type thin-film transistor and a p-type thin-film transistor formed on the transparent substrate, gate bus lines and source bus lines connected to the n-type and p-type transistors for controlling the n-type and p-type transistors, and pixel-corresponding electrodes controlled by the transistor pairs respectively. Drains of an n-type transistor and a p-type transistor in each of the pairs are connected to each other via a related pixel corresponding electrode. First pulses are applied to gates of the n-type transistors. Second pulses are applied to gates of the p-type transistors. There is provided a difference in phase between the first pulses and the second pulses.

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Hirakata, Japan

Tatsuo Yoshioka