Kabushiki Kaisha Toshiba

Nippon Steel Corporation

Nec Corporation

Tatsuo Yamazaki

Hiromitsu Takeda

Masako Nakahashi

Makoto Shirokane

Tsutomu Okutomi

Mitsutaka Homma

Mikio Okawa

Shozi Niwa

Kazuhiro Takahashi

Seiichi Suenaga

Akio Hori

Akira Kawakami

Hisashi Yoshino

Tomonori Kunieda

Yutaka Sadano

Kinichi Kimura

Haruo Ohguro

Akihiko Kusano

Isamu Takayama

Satoshi Yamamoto

Ryotaro Miyoshi

Shigeru Miyakawa

Koya Yasuda

Noboru Takeuchi

An α+β type titanium alloy wire contains, in mass %, Al: 4.50 to 6.75%, Si: 0 to 0.50%, C: 0.080% or less, N: 0.050% or less, H: 0.016% or less, O: 0.25% or less, Mo: 0 to 5.5%, V: 0 to 4.50%, Nb: 0 to 3.0%, Fe: 0 to 2.10%, Cr: 0 to less than 0.25%, Ni: 0 to less than 0.15%, Mn: 0 to less than 0.25%, and the balance being Ti and impurities, the contents of Al, Mo, V, Nb, Fe, Cr, Ni, and Mn satisfying an equation, in which an average aspect ratio of an α crystal grain is 1.0 to 3.0, a maximum crystal grain diameter of the α crystal grain is 30.0 μm or less, an average crystal grain diameter of the α crystal grain is 1.0 to 15.0 μm.

α+β type titanium alloy wire and manufacturing method of α+β type titanium alloy wire

There is provided a unit capable of performing calculation of delay time between a measuring station and a station to be measured by using an echo request/response frame in any block and at any time in a manner being independent from time-synchronization. To a payload portion of an OAM (Operations, Administration and Maintenance) echo request/response frame to be used for an OAM testing are added 'request transmitting time' being the time at which an OAM echo request has been transmitted from the measuring station and 'response receiving time' being the time at which the measuring station has received an OAM response from the station to be measured. After termination of the testing, the OAM echo request/response frame stored in a data buffer is read at arbitrary time and the request transmitting time added to the frame and response receiving time are extracted to calculate delay time between the measuring station and the station to be measured.

Delay time measuring method and system of echo request/response in network, and station and program used in the same system

Method of straightening wire rods of titanium and titanium alloy

A method of manufacturing a semiconductor device comprising a ceramics cylinder, a metal seal member closing an open end of the cylinder, a semiconductor element located within the cylinder and having electrodes, and leads or electrodes connected to the electrodes of the semiconductor element and extending from the cylinder. The method comprises the steps of coating powder of active metal consisting of Ti and/or Zr on the end face of the ceramics cylinder without heating the ceramics cylinder, in an amount of 0.1 mg/cm.sup.2 to 10 mg/cm.sup.2, mounting a layer of brazing filler metal on the end face of the ceramics cylinder, which have been coated with the powder of the active metal, placing the metal seal member on the layer of brazing filler metal, and heating the ceramics cylinder, the metal seal member, and the layer of brazing filler metal, thereby melting the layer of brazing filler metal and, thus, brazing the metal seal member to the open end of the ceramics cylinder.

Method of manufacturing a semiconductor device

A method of manufacturing an air-tight ceramic container is disclosed. This method includes the steps of coating an active metal consisting of Ti and/or Zr on an opening end face of a ceramic tubular member in an amount of 0.1 to 10 mg/cm.sup.2, thereby forming an active metal layer, placing a brazing filler metal on the active metal layer, placing a metal cover member for shielding an opening portion of the ceramic tubular member so that a peripheral portion end face of the metal cover member is in contact with the brazing filler metal, and melting the brazing filler metal by heating, thereby brazing the metal cover member to the opening end face of the ceramic tubular member.

Air-tight ceramic container

A nitride ceramic member is maintained at a vacuum of 1.times.10.sup.-4 Torr or less at a temperature of 1,000.degree. C. or more, and a metal vapor is brought into contact with the surface of the nitride ceramic member. A nitride is reacted with the metal in the surface portion of the ceramic member, and a metallized layer is formed on the surface of the member. If AlN is used as a nitride ceramic material, the AlN member is maintained at the vacuum at the high temperature and a Ti vapor is brought into contact wit the surface of the AlN member to form a TiN coating layer on the surface of the AlN member. A BN or graphite mask is formed on the surface of the nitride ceramic member and the above method is practiced to selectively form a metallized layer on the non-masked member surface. By selectively forming a metallized layer by using AlN, a highly thermal-conductivity substrate having a conductive layer formed on the AlN base can be prepared.

Method of coating a nitride ceramic member

A method for preparing a highly heat conductive substrate which comprises interposing an active layer with a thickness of 0.5 to 10 .mu.m comprising silver (Ag) and an active metal selected from the group consisting of titanium, zirconium and hafnium, and also copper (Cu) optionally, between an aluminium nitride (AlN) substrate and a copper member; and joining said aluminium nitride (AlN) substrate and said copper (Cu) member with each other by heating. A copper wiring sheet comprising the above active layer is also usable in the method.

Method for preparing highly heat-conductive substrate and copper wiring

Growing community of inventors

Tokyo, Japan

Tatsuo Yamazaki