Fujikura Limited

Sony Corporation

Olympus Corporation

Olympus Optical Company, Ltd.

Tatsuo Suemasu

Takashi Takizawa

Satoshi Yamamoto

Sayaka Hirafune

Masami Suzuki

Kazuya Matsumoto

Yuji Takaoka

Yoshimichi Harada

Yoshihiro Nabe

Michikazu Tomita

Hideyuki Wada

Masanobu Saruta

Toshihiko Isokawa

Hiroshi Miyajima

Koichi Shiotani

Masahiro Katashiro

A method of manufacturing a microfluidic chip includes: irradiating, with a laser light, an area to be provided with a valley for storing a fluid on a surface of a substrate so as to form a modified region having a periodic pattern formed in a self-organizing manner in a light-collecting area of the laser light, the laser light having a pulse width for which the pulse duration is on the order of picoseconds or less; carrying out an etching treatment on the substrate in which the modified region is formed, removing at least some of the modified portion so as to provide the valley, and forming a periodic structure having a plurality of groove portions along one direction which have a surface profile based on the periodic pattern on at least a bottom surface of the valley; and forming a metal layer that covers the periodic structure of the bottom surface.

Method of manufacturing microfluidic chip, microfluidic chip, and apparatus for generating surface plasmon resonant light

A semiconductor apparatus having a through-hole interconnection in a semiconductor substrate. An insulating layer is formed on the semiconductor substrate. A via hole is formed through the semiconductor substrate and the insulating layer. The through-hole interconnection has another insulating layer formed in the via hole and a conductive layer formed thereon. The insulating layer formed in the via hole is formed such as to substantially planarize an inner surface of the via hole.

Semiconductor apparatus having a through-hole interconnection

A method for manufacturing a semiconductor apparatus having a through-hole interconnection in a semiconductor substrate. An insulating layer is formed on the semiconductor substrate. A via hole is formed through the semiconductor substrate and the insulating layer. Another insulating layer is formed in the via hole, and a conductive layer of the through-hole interconnection is subsequently formed. The insulating layer formed in the via hole is formed such as to substantially planarize an inner surface of the via hole.

Method for manufacturing a semiconductor apparatus having a through-hole interconnection

A blind hole () is formed on a substrate () from a first side of the substrate toward a second side of the substrate (). A conductor () is filled in the blind hole (). The substrate () is removed from the opposite side to expose the conductor () filled in the blind hole ().

Method for fabricating a through-hole interconnection substrate

A semiconductor package includes: a first substrate including: a semiconductor base material having a first side and a second side; a functional element that is provided at the first side of the semiconductor base material; a first wiring; a pad that is electrically connected to the functional element via the first wiring; a through-hole interconnection that is electrically connected to the pad and is provided in a hole that is defined penetrating the semiconductor base material from the first side thereof to the second side thereof, the through-hole interconnection including a first insulating film and a first conductive material formed on the first insulating film; and a sealing material provided surrounding the functional element; a second substrate that is bonded to a first side of the first substrate via the sealing material.

Semiconductor package and method for manufacturing the same

Method for fabricating a through-hole interconnection substrate and a through-hole interconnection substrate

A semiconductor package of the invention comprises: a semiconductor element provided with a circuit element on one surface of a semiconductor substrate; an external wiring region provided on an other surface of the semiconductor substrate; a support substrate disposed on the one surface of the semiconductor substrate; an electrode pad disposed on the one surface of the semiconductor substrate; and a through-electrode which extends from the electrode pad through to the other surface of the semiconductor substrate.

Semiconductor package with through-hole

The semiconductor pressure sensor includes a substrate (). The sensor includes a diaphragm () implemented in the substrate () and being displaceable by a pressure medium acting on a side of the substrate (). The sensor includes sensor circuitry () implemented on the opposite side of the substrate in coincidence with the diaphragm () for detecting displacement of the diaphragm () for pressure.

Semiconductor pressure sensor

A manufacturing method of a semiconductor substrate provided with a through hole electrode is proposed. In accordance with the methods, it is possible to effectively form a through hole electrode in a semiconductor substrate in which a device and a wiring pattern have been already fabricated. This manufacturing method includes the steps of forming a first silicon oxide filmon a principal surface of the semiconductor substrate, forming a small holethrough the semiconductor substratefrom the opposite the step to reach to the first silicon oxide film, covering the inside of the small holewith the second silicon oxide film, forming a first thin metal filmand a second thin metal filmon the first silicon oxide film, partially removing the first silicon oxide filmcorresponding to the end of the small hole, and filling the small holewith the conductive material to form a through hole electrode

Manufacturing method of a semiconductor substrate provided with a through hole electrode

In the formation of through wirings in a silicon substrate and so forth, there was a need for the development of a technology that would allow metal to be reliably filled particularly in the vicinity of openings of through holes and other fine holes. This invention provides a metal filling method and member with filled metal sections in which, in the inflow and filling of a plating solution into through holes of a substrate by immersing said substrate in heated and melted conductive metal, filled metal sections are formed by preliminarily forming a metal layer on the inner surface of one of the ends of through holes of this substrate as well as on substrate top surface around those openings, removing substrate on which inflow and filling of the plating solution into through holes has been completed from the plating solution, and then cooling to solidify the plating solution that has been filled into the through holes.

Growing community of inventors

Tokyo, Japan

Tatsuo Suemasu