Japan Science and Technology Agency

Plasma & Materials Technologies, Inc.

Other

Japan Science and Technology Corporation

Tatsuo Shoji

Yuichi Setsuhara

Robert W Conn

Gregor A Campbell

Shoji Miyake

Akinori Ebe

Masayoshi Kamai

Alexis P deChambrier

David C Pearson

The present invention aims to provide a plasma generator capable of creating a spatially uniform distribution of high-density plasma. This object is achieved by the following construction. Multiple antennas are located on the sidewall of a vacuum chamber, and a RF power source is connected to three or four antennas in parallel via a plate-shaped conductor. The length of the conductor of each antenna is shorter than the quarter wavelength of the induction electromagnetic wave generated within the vacuum chamber. Setting the length of the conductor of the antenna in such a manner prevents the occurrence of a standing wave and thereby maintains the uniformity of the plasma within the vacuum chamber. In addition, the plate-shaped conductor improves the heat-releasing efficiency, which also contributes to the suppression of the impedance.

Plasma generator, plasma control method and method of producing substrate

The present invention aims to provide a plasma generator capable of creating a spatially uniform distribution of high-density plasma. This object is achieved by the following construction. Multiple antennasare located on the sidewall of a vacuum chamber, and a RF power source is connected to three or four antennasin parallel via a plate-shaped conductor. The length of the conductor of each antennais shorter than the quarter wavelength of the induction electromagnetic wave generated within the vacuum chamber. Setting the length of the conductor of the antenna in such a manner prevents the occurrence of a standing wave and thereby maintains the uniformity of the plasma within the vacuum chamber. In addition, the plate-shaped conductorimproves the heat-releasing efficiency, which also contributes to the suppression of the impedance.

Plasma generator, plasma control method, and method of producing substrate

A high frequency power supplying device and a plasma generation device using the same includes: two or more inductive antennas; high frequency power sources, respectively supplying power to the antennas; and a vacuum chamber on which the antennas are provided so as to generate a plasma by inductive coupling with high frequency power, wherein each of the high frequency power sources is positioned close to a corresponding antenna. On this account, it is possible to reduce unevenness in high frequency voltages generated in the antennas. Thus, even when a diameter and a volume of the plasma generation section are made larger, it is possible to generate much more uniform plasma, thereby stabilizing (i) thin film formation processes based on the plasma and (ii) plasma ion implantation processes.

High frequency power supply device and plasma generator

The whole antenna conductor is housed in the interior of a vacuum container of a plasma generator thereby to eliminate the need for an insulating partition or a top plate so that the whole induction field radiated from the antenna can be effectively utilized. Furthermore, the occurrence of abnormal discharge is suppressed to stabilize a high-density plasma by reducing the inductance of the antenna and covering the antenna conductor with an insulator.

Plasma generator

A high density ionized plasma is generated in a source chamber using a single loop disposed in a plane that intercepts the central axis of the source chamber perpendicularly or at a lesser angle and spaced from the closed end of the chamber. With a longitudinal magnetic field and an inert or reactive gas injected into the source chamber, excitation of the antenna with RF energy in the 5 to 30 MHz establishes the M=0 excitation mode or components of both the M=0 and M=1 modes. Low frequency whistler waves are created which generate a uniform and high density plasma and high plasma current. The plasma source thus defined is used in combination with process chamber configurations in which static shaped or time modulated magnetic fields enhance the distribution and uniformity of the plasma at a substrate to be etched, deposited or sputtered.

High density plasma deposition and etching apparatus

The high density RF plasma generator of this invention uses special antenna configurations (15) to launch RF waves at low frequency such as 13.56 MHz along a magnetic field supplied by an external magnetic field generator (16.17) in a discharge space (14) where the working gas is introduced and which is used alone or in conjunction with a process chamber (18) where specimen substrates (20) are located to either deposit or etch films from a substrate or to sputter deposit films to a substrate. The plasma etching, deposition and/or sputtering system comprises the high density RF plasma generator, the external magnetic field, the gas injection and control system, the antenna system (15) and associated power supplies (48), the process chamber (18), and the means to couple plasma from the generator to substrates or targets, including magnetic means (36) to enhance plasma uniformity at the substrates (20) or targets (92).

Growing community of inventors

Nagoya, Japan

Tatsuo Shoji