Kabushiki Kaisha Toshiba

Tokyo Electron Limited

Tokyo Electron Tohoku Limited

Tatsuo Shiotsuki

Hitoshi Kato

Hirokazu Ezawa

Haruki Mori

Tatsuo Migita

Masahiro Miyata

Soichi Yamashita

Tsutomu Kojima

Ryuji Hosokawa

Yutaka Shimada

Koro Nagamine

Kazutugu Aoki

Junichi Kakizaki

Kiyoshi Muranishi

A semiconductor apparatus in a preferred embodiment includes: a substrate; a first chip provided on the substrate; a solder bump formed on the first chip; a solder dam arranged in substantially a rectangular and annular manner outside around the solder bump on the first chip by alternately connecting four sides and four quarter or less arcs; an electrode pad placed outside of the solder dam in the first chip; a second chip provided on the first chip in electric connection to the first chip via the solder bump; and an under-fill material filling a clearance between the first chip and the second chip inside of the solder dam. Here, a difference between an inner diameter and an outer diameter of the arc is 60 &#x3bc;m or more whereas the center radius of the arc is greater than 207.5 &#x3bc;m.

Semiconductor apparatus

According to one embodiment, a semiconductor substrate, a metal film, a surface modifying layer, and a redistribution trace are provided. On the semiconductor substrate, a wire and a pad electrode are formed. The metal film is formed over the semiconductor substrate. The surface modifying layer is formed on a surface layer of the metal film and improves the adhesion with a resist pattern. The redistribution trace is formed on the metal film via the surface modifying layer.

Semiconductor device and manufacturing method of semiconductor device

A substrate processing apparatus comprising a process tube for enclosing a plurality of semiconductor wafers, injectors for introducing process gas into the process tube, a vacuum pump for exhausting the process tube, RF electrodes arranged along the outer circumference of the process tube and serving to generate high frequency electric field, when power is supplied, in a process-gas-introduced region so as to make process gas into plasmas, a high frequency power source for supplying power to the RF electrodes, heaters arranged in the process tube to directly heat the plural wafers, a power supply for supplying power to the heaters, and a controller for controlling the amount of power supplied from the power supply to the heaters.

Plasma processing apparatus etching tunnel-type

Growing community of inventors

Oita, Japan

Tatsuo Shiotsuki