Tdk Corporation

Mitsubishi Denki Kabushiki Kaisha

Kyocera Corporation

Kddi Corporation

Nippon Hoso' Kyokai

Tatsuo Shibata

Tomoyuki Sasaki

Katsuyuki Nakada

Shogo Yamada

Takuya Ashida

Tohru Oikawa

Yoshitomo Tanaka

Masashi Sahashi

Minoru Ota

Kuniyasu Ito

Yohei Shiokawa

Masaru Fukushima

Shogo Yonemura

Shinsaku Kiyomoto

Tomohiro Nozaki

Shuichi Sugie

Mikio Matsuzaki

Takeshi Kimura

Shinto Ichikawa

Yukio Terasaki

Yugo Ishitani

Minoru Sanuki

Keigo Majima

Go Ohtake

Koichi Shinohara

Hideki Kokubun

A domain wall movement element includes a reference layer, nonmagnetic layer, domain wall movement layer, and first and second magnetization fixed layers. The first layer is connected to the domain wall movement layer. The second layer is connected to the domain wall movement layer at a position different from the first in a first direction. The nonmagnetic layer is interposed between the reference layer and domain wall movement layer in a stacking direction. The nonmagnetic layer includes first and second regions. The first region includes an oxide of Mg or an oxide containing Mg and a nonmagnetic element other than Mg. The second region includes an oxide containing Mg and a nonmagnetic element. A concentration of the nonmagnetic element in the second region is higher than that of the first region by 0.1 atom % or more. The second region is discontinuous in a plane orthogonal to the stacking direction.

Domain wall movement element, magnetoresistive element, and magnetic array

A variable capacitor includes: a first conductive layer; a second conductive layer; and a capacitance layer sandwiched between the first conductive layer and the second conductive layer. Each of the first conductive layer and the second conductive layer is a ferromagnetic layer containing a ferromagnetic material. The first conductive layer has a first magnetic domain and a second magnetic domain having magnetization oriented in a direction different from the first magnetic domain. In the variable capacitor, a domain wall which is a boundary between the first magnetic domain and the second magnetic domain is configured to be movable within at least an area of the first conductive layer overlapping the capacitance layer in a laminating direction in a first direction within a plane of the first conductive layer.

Variable capacitor and integrated circuit

A magnetic domain wall movement type magnetic recording element according to an embodiment includes: a first ferromagnetic layer which includes a ferromagnetic body; a non-magnetic layer which faces the first ferromagnetic layer; and a magnetic recording layer which faces a surface of the non-magnetic layer on a side opposite to the first ferromagnetic layer and extends in a first direction. A first surface of the magnetic recording layer which faces the non-magnetic layer has a smaller arithmetic mean roughness than a second surface opposite to the first surface.

Domain wall motion type magnetic recording element

A magnetic domain wall moving element includes a first ferromagnetic layer, non-magnetic layer, second ferromagnetic layer, first magnetization fixed part, second magnetization fixed part, first surface layer and second surface layer. The first and second ferromagnetic layer sandwich the non-magnetic layer, the second ferromagnetic layer has a region having a magnetic domain wall formed therein, the first magnetization fixed part contacts second ferromagnetic layer, the second magnetization fixed part contacts second ferromagnetic layer at a position different from that of the first magnetization fixed part, the first is thicker than the second magnetization fixed part, the first surface layer contacts the first magnetization fixed part's first surface, the second surface layer contacts the second magnetization fixed part's first surface, and a constituent atom of a portion of the first surface layer in contact with the first magnetization fixed part are different from a constituent atom of the second surface layer.

Magnetic domain wall moving element and magnetic array

A magnetic domain wall movement element includes a magnetoresistance effect part, a first electrode, a second electrode, a third electrode, a first magnetization fixed layer, and a second magnetization fixed layer. The magnetoresistance effect part includes a reference layer, a magnetic domain wall movement layer, and a non-magnetic layer. The magnetic domain wall movement layer has a first region and second region in which a magnetization direction is fixed, and a third region in which a magnetization direction is variable. The reference layer overlaps at least part of the first region and the second region in a plan view in a first direction, and at least part of the first region and the second region is shorter than the third region in a third direction orthogonal to the first direction and the second direction.

Magnetic domain wall movement element and magnetic array

A method for producing a spin current magnetization rotational element includes a stacking step of stacking, on one surface of a substrate, a magnetoresistance effect element having a first ferromagnetic metal layer having a fixed magnetization direction, a second ferromagnetic metal layer having a variable magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a first direction, wherein an inclined surface non-parallel to the first direction is formed on at least a part of a surface of the spin-orbit torque wiring.

Spin current magnetization reversal element, element assembly, and method for producing spin current magnetization reversal element

A multiply-accumulate calculation device includes: a plurality of first multiple calculation elements configured to generate first output signals by multiplying a first input signal corresponding to an input value by a weight and output the first output signals; and an accumulate calculation unit configured to calculate a sum of the first output signals output from the plurality of first multiple calculation elements in a calculation period from a point in time at which transition to a steady state has occurred after transient responses caused by charging to parasitic capacitors of the plurality of first multiple calculation elements according to input of the first input signal to a point in time after transient responses caused by discharging from the parasitic capacitors of the plurality of first multiple calculation elements according to input of the first input signal have started to be generated.

Product-sum calculation unit, neuromorphic device, and product-sum calculation method

A magnetoresistance effect element includes a magnetic recording layer which includes a ferromagnetic material, a non-magnetic layer laminated on the magnetic recording layer, and a magnetization reference layer which is laminated on the non-magnetic layer. The magnetic recording layer includes a first ferromagnetic layer, a spacer layer, and a second ferromagnetic layer in order from the non-magnetic layer. The first ferromagnetic layer and the second ferromagnetic layer are antiferromagnetically coupled to each other. The magnetic recording layer has a central region in which a product of a film thickness and saturation magnetization of the first ferromagnetic layer is greater than a product of a film thickness and saturation magnetization of the second ferromagnetic layer, and an outer region in which the product of the film thickness and the saturation magnetization of the first ferromagnetic layer is smaller than the product of the film thickness and the saturation magnetization of the second ferromagnetic layer.

Magnetoresistance effect element and magnetic recording array

A magnetic domain wall movement element includes: a laminate including a ferromagnetic layer, a non-magnetic layer, and a magnetic domain wall movement layer; a first conductive layer; and a first surface layer laminated above a substrate in order from the substrate, wherein the non-magnetic layer is sandwiched between the ferromagnetic layer and the magnetic domain wall movement layer, wherein the first conductive layer is connected to an upper surface of the magnetic domain wall movement layer, wherein the first surface layer contacts at least a part of an upper surface of the magnetic domain wall movement layer, and wherein the resistivity of the first surface layer is higher than the resistivity of the magnetic domain wall movement layer.

A neuromorphic device includes: first and second element groups, in which each includes magnetic domain wall movement elements, each of which includes magnetic domain wall movement and ferromagnetic layers, and a non-magnetic layer between the magnetic domain wall movement and ferromagnetic layers, a length of the magnetic domain wall movement layer of each of the magnetic domain wall movement elements belonging to the first element group in a longitudinal direction is shorter than a length of the magnetic domain wall movement layer of each of the magnetic domain wall movement elements belonging to the second element group in the longitudinal direction, and a resistance changing rate when a predetermined pulse is input is higher for each of the magnetic domain wall movement elements belonging to the first element group than for each of the magnetic domain wall movement elements belonging to the second element group.

Neuromorphic device

An integrated device includes: a substrate; and a laminated structural body. The substrate has a plurality of switching elements. The laminated structural body has a plurality of magnetic elements having a first element group disposed in a first hierarchical layer and a second element group disposed in a second hierarchical layer. Each of the plurality of magnetic elements includes a conductive layer and a laminated body including a ferromagnetic layer. The plurality of switching elements include a plurality of first switching elements connected to first ends of the conductive layers and a plurality of second switching elements connected to second ends of the conductive layers. A first switching element connected to a second magnetic element belonging to a second element group which is present between a first switching element and a second switching element connected to a first magnetic element belonging to a first element group.

Integrated device and neuromorphic device

A reservoir element includes a plurality of magnetoresistive effect elements each having a first ferromagnetic layer, a non-magnetic layer and a second ferromagnetic layer laminated in a first direction, and separated from each other, a spin orbit torque wiring that faces a part of at least one of the plurality of magnetoresistive effect elements, and a spin-conductive layer that connects at least the magnetoresistive effect elements closest to each other of the plurality of magnetoresistive effect elements, and conducts spins, wherein, the magnetoresistive effect elements are seen from the first direction, the second ferromagnetic layer overlaps part of the first ferromagnetic layer, the spin orbit torque wiring faces a first portion that does not overlap the second ferromagnetic layer in the first ferromagnetic layer when seen from the first direction, and the spin-conductive layer faces at least the first ferromagnetic layer each of the closest magnetoresistive effect elements.

Reservoir element and neuromorphic element

A multiply-accumulate calculation device includes: multiple calculation units which generates output signals by multiplying an input signal corresponding to an input value and having a rising part, a signal part, and a falling part by a weight, and output the output signals; an accumulate calculation unit configured to calculate a sum of the output signals output from the plurality of multiple calculation units; and a correction unit configured to execute correction processing for correcting the sum of the output signals on the basis of a correction value including at least one of a first value incorporated into the sum by a current flowing into variable resistors of the multiple calculation units due to the rising part of the input signal, and a second value incorporated into the sum by a current flowing into the variable resistors of the multiple calculation units due to the falling part of the input signal.

Product-sum operation device, logical calculation device, neuromorphic device, and multiply-accumulate method

A magnetic recording layer according to this embodiment has a magnetic domain wall inside and contains a rare gas element.

Magnetic recording layer, magnetic domain wall moving element and magnetic recording array

A magnetic domain wall movement element according to the present embodiment includes a first ferromagnetic layer, a nonmagnetic layer, and a second ferromagnetic layer that are laminated in an order from a side close to a substrate. On a cross-section along a lamination direction and a second direction orthogonal to a first direction in which the first ferromagnetic layer extends in a plan view from the lamination direction, a shortest width of the first ferromagnetic layer in the second direction is shorter than a width of the nonmagnetic layer in the second direction.

Growing community of inventors

Tokyo, Japan

Tatsuo Shibata