Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Tatsuo Ohashi

Goshi Biwa

Akira Ohmae

Yusuke Kataoka

Ippei Nishinaka

Yoshiaki Watanabe

Tomonori Hino

Nobukata Okano

Hisayoshi Kuramochi

Katsuhiro Tomoda

Sayaka Aoki

Norifumi Kikuchi

Gen Sakoda

Yuichiro Kikuchi

Hiroki Naito

Toshio Fujino

Hideyuki Nishioka

Tsuyoshi Sahoda

There is provided a display device including a plurality of unit regions disposed adjacent to each other, a first region that is provided in each of the unit regions, and emits first light, and a second region that is provided outside the first region in each of the unit regions, and emits second light. The second light is different from the first light in at least one of luminance, wavelength, or surface-reflection component, the second regions are provided between adjacent ones of the first regions, and a difference in luminance, wavelength, or surface-reflection component between the second light to be emitted from adjacent ones of the unit regions is smaller than a difference in luminance, wavelength, or surface-reflection component between the first light and the second light in a same one of the unit regions.

Display device and electronic apparatus

A light emitting device of one embodiment of the present disclosure includes: a substrate; a light emitting element disposed above the substrate, and having electrodes on respective upper surface and lower surface of the light emitting element; and a light shielding layer provided between the substrate and the light emitting element.

Light emitting device and display apparatus

A light emitting device including a light emitting layer that is provided between a first face and a second face, a first electrode that is provided on the first face and is electrically coupled to the light emitting layer, a second electrode that is provided on the second face and is electrically coupled to the light emitting layer, and a non-selected electrode that is provided on the first face and is in a state not electrically coupled to a potential supply source.

Light emitting device and display

[Object] A light-emitting element includes: a semiconductor layer; a first electrode portion; a second electrode portion; a first insulating layer; and a metal layer. The semiconductor layer includes an active layer, a first-conductivity-type layer, and a second-conductivity-type layer, and has a semiconductor-layer side surface including a side surface of the active layer, a side surface of the first-conductivity-type layer, and a side surface of the second-conductivity-type layer. The first electrode portion is connected to the first-conductivity-type layer. The second electrode portion is connected to the second-conductivity-type layer. The first insulating layer is in contact at least with a part of the semiconductor-layer side surface, the part of the semiconductor-layer side surface corresponding to a part of the side surface of the active layer. The metal layer is in contact at least with an opposed surface of the first insulating layer, the opposed surface of the first insulating layer facing the side surface of the active layer. The metal layer is conducted to the first electrode portion and insulated from the second electrode portion.

Light-emitting element, light-emitting unit, light-emitting panel device, and method for driving light-emitting panel device

A light-emitting device assembly includes a light-emitting device including a light-emitting layer, a first electrode, and a second electrode, and a first connecting portion and a second connecting portion provided on a base, in which the first connecting portion and the second connecting portion are separated from each other by a separation portion, the base is exposed from the separation portion, a wide portion is on a first connecting portion side of the separation portion, the first electrode includes a first portion and a second portion, the second portion of the first electrode is connected to the first connecting portion, the first portion of the first electrode extends from the second portion of the first electrode, and an orthographic projection image of the first portion of the first electrode with respect to the base and the wide portion of the separation portion overlap with each other at least in part.

Light-emitting device assembly, method of producing the same, and display apparatus

A light emitting device includes a light emitting part, a black layer, and a light diffusion partthat is formed on or above the black layer. The black layeris provided with an opening partthat allows light emitted from the light emitting part to pass through it. Then, light having passed through the opening partpasses through the light diffusion part

[Solving Means] A semiconductor unit includes a substrate, a semiconductor device, and a plating layer. The semiconductor device includes a semiconductor layer and one or more electrodes, the one or more electrodes being connected to the semiconductor layer and including a platinum-group element as a main material. The plating layer bonds the substrate and the electrode.

Semiconductor unit, semiconductor device, light-emitting apparatus, display apparatus, and method of manufacturing semiconductor device

There is provided a light emitting apparatus, including a plurality of light emitting elements having biased light properties; and a mounting substrate where the light emitting elements are arranged such that the biased light properties are complemented within a group including at least two light emitting elements among a plurality of the light emitting elements. Also, there are provided a light emitting unit, a display apparatus, an electronic device and a light emitting element using a plurality of point light sources.

Light emitting apparatus, light emitting unit, display apparatus, electronic device and light emitting element

A light-emitting device includes a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a second electrode formed on the second compound semiconductor layer; an insulating layer covering the second electrode; a first opening provided to pass through the insulating layer, the second electrode, the second compound semiconductor layer, and the active layer; a second opening provided to pass through the insulating layer; a first electrode formed on an exposed portion of the first compound semiconductor layer at the bottom of the first opening; a first electrode extension extending from the first electrode to the insulating layer through the first opening and a first pad portion including a portion of the first electrode extension on the insulating layer; and a second pad portion connected to an exposed portion of the second electrode at the bottom of the second opening.

Light-emitting device

A method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.

Light emitting device and method of manufacturing the same

Herein disclosed a method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.

Growing community of inventors

Kanagawa, Japan

Tatsuo Ohashi