Tdk Corporation

Tatsuo Namikawa

Yuuki Aburakawa

Hitoshi Saita

Takao Noguchi

Shigeaki Tanaka

Ken Unno

Katsuyuki Kurachi

Kenichi Tochi

Junji Aotani

Kazuhiro Yoshikawa

Yoshihiko Yano

Yasunobu Oikawa

Akiyasu Iioka

Kenichi Yoshida

Hitoshi Yamaguchi

Kyung-Ku Choi

Takashi Ohtsuka

Suguru Andoh

Atsuo Matsutani

Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The dielectric layer has a through hole. An inner wall surface of the through hole has a first tapered surface and a second tapered surface surrounded by the first tapered surface. The first and second tapered surfaces are not covered with the upper electrode layer and have respective first and second taper angles with respect to a surface of the lower electrode layer. The second taper angle is smaller than the first taper angle.

Thin film capacitor having a dielectric layer having a through hole whose inner surface has first and second tapered surfaces, circuit board incorporating the same, and thin film capacitor manufacturing method

Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The dielectric layer has a through hole. The upper electrode layer has a connection part connected to the lower electrode layer through the through hole and an electrode part insulated from the connection part by a slit. A surface of the lower electrode layer that contacts the connection part through the through hole includes an annular area positioned along an inner wall surface of the through hole and a center area surrounded by the annular area. The annular area is lower in surface roughness than the center area.

Thin film capacitor, circuit board incorporating the same, and thin film capacitor manufacturing method

A thin film capacitor is provided with a lower electrode made of a metal foil containing many metal grains, a dielectric thin film formed on an upper surface of the lower electrode, and an upper electrode formed on an upper surface of the dielectric thin film. A lower surface of the lower electrode is an etched surface from which cross sections of the metal grains appear. The height difference between the cross sections of adjacent metal grains in the etched surface is 1 &#x3bc;m or more and 8 &#x3bc;m or less.

Thin film capacitor, manufacturing method therefor, and substrate with built-in electronic component

Disclosed herein is a thin film capacitor that includes a capacitive insulating film, a first metal film formed on one surface of the capacitive insulating film, and a second metal film formed on other surface of the capacitive insulating film and made of a metal material different from that of the first metal film. The thin film capacitor has an opening penetrating the capacitive insulating film, first metal film, and second metal film. The second metal film is thicker than the first metal film. A first size of a part of the opening that penetrates the first metal film is larger than a second size of a part of the opening that penetrates the second metal film.

Thin film capacitor and circuit board incorporating the same

Disclosed herein is a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer positioned between the lower electrode layer and the upper electrode layer. The upper electrode layer has a first capacitive electrode part opposed to the lower electrode layer through the dielectric layer without being connected to the lower electrode layer and a fiducial mark part penetrating the dielectric layer to be connected to the lower electrode layer.

Thin film capacitor and multilayer circuit board having the thin film capacitor embedded therein

An electronic device sheet, comprising a pair of electrodes, a dielectric layer provided between the pair of electrodes, and one or more insulation patch members provided on one of principal surfaces of the dielectric layer, wherein the insulation patch member includes a boundary line having an undulating shape.

Electronic device sheet

A thin film capacitor comprises: a laminated body that has a base electrode, a dielectric layer and an upper electrode layer; a protective layer covering the base electrode, the dielectric layer and the upper electrode layer, and includes a first through-hole that reaches the base electrode, and a second through-hole that reaches the upper electrode layer; a first extraction electrode in the first through-hole and electrically connected with the base electrode; a second extraction electrode in the second through-hole and electrically connected with the upper electrode layer; a first terminal electrode on the protective layer, and connected with the base electrode through the first extraction electrode; and a second terminal electrode on the protective layer, and connected with the upper electrode layer through the second extraction electrode. Young's modulus of the protective layer is equal to or higher than 0.1 GPa and equal to or lower than 2.0 GPa.

Thin film capacitor

A thin film capacitor includes a lower electrode layer, an upper electrode layer, and a dielectric substance layer provided between the lower electrode layer and the upper electrode layer. A dielectric patch member formed of a dielectric material is formed on a surface of the dielectric substance layer on an upper electrode layer side, a cross-sectional structure of the dielectric patch member has a taper angle of 1 to 25 degrees in a cross section perpendicular to the dielectric substance layer, the taper angle being an angle formed by (1) a tangential line tangent to an end portion of the dielectric patch member at a position that is 50% of a maximum height of the dielectric patch member and (2) a line being an interface between the dielectric substance layer and the upper electrode layer, and an area of the dielectric patch member is 100 to 900000 &#x3bc;m.

Thin film capacitor with improved resistance to dielectric breakdown

A thin film capacitor includes a pair of electrode layers, a dielectric layer existing between the pair of electrode layers, and a ceramic layer disposed on a surface opposite to the dielectric layer of at least one of the electrode layers.

A thin film capacitor includes: a laminated body in which a dielectric layer and an upper electrode layer are successively laminated on a base electrode; a protective layer that covers a part of the base electrode, the dielectric layer and the upper electrode layer and includes a through-hole respectively on the base electrode and on the upper electrode layer; and terminal electrodes that are electrically connected with the base electrode and the upper electrode layer through the through-holes of the protective layer. A modulus of longitudinal elasticity (Young's modulus) of the protective layer is 0.1 GPa to 2.0 GPa.

A thin film capacitor including a lower electrode layer, a dielectric layer provided on the lower electrode layer, and an upper electrode layer formed on the dielectric layer, wherein the dielectric layer includes a recessed portion in a portion on the upper face thereof, a cross-sectional structure perpendicular to the dielectric layer of the recessed portion has a cross-sectional taper angle of 1 degree or more and 25 degrees or less, and the distance between the bottom portion center and an outermost portion of the recessed portion is 20 times or more and 150 times or less a thickness of the dielectric layer.

A thin film capacitor includes two or more of dielectric body layers that are alternately laminated on an under-electrode, and internal electrode layers that are laminated between the dielectric body layers, and are exposed off the dielectric body layer, and a connection electrode that is electrically connected to the internal electrode layers via the exposed portion of the internal electrode layers, A relationship between an average grain size D of crystal grains in the internal electrode layers and an average grain size d of crystal grains in the connection electrode is D&#x3e;d.

A thin film capacitor includes an under electrode, a plurality of dielectric body layers and a plurality of internal electrode layers that are alternately laminated on the under electrode, the internal electrode layers respectively including protrusion parts that each protrude from the dielectric body layers viewed in the lamination direction, and connection electrodes to which at least a portion of each of the protrusion parts contacts. Assuming that protrusion amounts of the protrusion parts of the internal electrode layers that are connected to the same connection electrode are regarded as L, a protrusion amount Lof a protrusion part of n(n&#x2267;2) internal electrode layer from the under electrode side is smaller than another protrusion amount Lof another protrusion part of (n&#x2212;1)internal electrode layer.

The invention provides an electronic component and a manufacturing method thereof that can achieve an improved adhesion strength when the electronic component is solder-mounted onto an external substrate and can thereby obtain considerably improved electric properties and reliabilities, etc. An electronic component, which is a capacitor, has: a circuit elementformed on a substrate; an electrode layerconnected to the circuit element; passivation layersandthat cover the electrode layer; and terminal electrodesandconnected to the electrode layervia via-conductors Va and Vb formed through the passivation layersand, the terminal electrodesandbeing formed to cover the side wall of the passivation layersand. Since the pad electrodesandare formed so as to cover the passivation layersandacross their uppermost surfaces and side walls, the area of contact between the pad electrodesandand the solder for solder-mounting increases, and the capacitorcan consequently exhibit an improved adhesion strength.

Electronic component and manufacturing method thereof

The invention provides an electronic component and a manufacturing method thereof that: can allow electronic components to be mounted on an external substrate at a higher density than before; can adjust the height (level) of a terminal electrode as required and desired, thereby solving problems that would occur in the inspection of the conventional electronic components; and can also improve the yield in the mounting of electronic components, thereby achieving increased productivity. A capacitor, which is an electronic component, has: a first upper electrodeformed above a substrate; a first seatand a second seatwhich are formed adjacent to the first upper electrode; passivation layersandthat cover the first upper electrodeand the first and second seatsand; and a terminal electrodeformed above the first and second seatsandand connected to the first upper electrodevia via-conductors Va and Vc which are formed through the passivation layersandrespectively.

Growing community of inventors

Tokyo, Japan

Tatsuo Namikawa