Kabushiki Kaisha Toshiba

Tatsuo Naijo

Ichiro Omura

Tsuneo Ogura

Koichi Sugiyama

Atsushi Murakoshi

Masakazu Yamaguchi

Masanobu Tsuchitani

Hideki Nozaki

Yoko Sakiyama

A semiconductor device includes: a drift layer of a first conductivity type; a base layer of a second conductivity type provided on the drift layer; an emitter layer of the first conductivity type provided in part of an upper portion of the base layer; a buffer layer of the first conductivity type provided below the drift layer; a high-resistance layer of the first conductivity type provided below the buffer layer; a collector layer of the second conductivity type provided in a partial region on a lower surface of the high-resistance layer; a contact layer of the first conductivity type provided in another partial region on the lower surface of the high-resistance layer; a trench gate electrode extending through the emitter layer and the base layer into the drift layer; and a gate insulating film provided between the emitter layer, the base layer, and the drift layer on one hand and the trench gate electrode on the other.

Semiconductor device

A power semiconductor device includes: a semiconductor layer having a trench extending along a first direction in a stripe configuration; a gate electrode buried in the trench for controlling a current flowing in the semiconductor layer; and a gate plug made of a material having higher electrical conductivity than the gate electrode, the gate plug having the stripe configuration and being connected to the gate electrode along the first direction. The semiconductor layer includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type provided partially in an upper face of the first semiconductor layer; a third semiconductor layer of the first conductivity type provided partially on the second semiconductor layer; and a fourth semiconductor layer of the second conductivity type provided on a lower face of the first semiconductor layer.

Power semiconductor device with a plurality of gate electrodes

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Hyogo-ken, Japan

Tatsuo Naijo