Nissan Motor Company Limited

Panasonic Corporation

Hitachi, Ltd.

Sharp Kabushiki Kaisha Corporation

Obara Corporation

Semiconductor Energy Laboratory Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Research Triangle Institute

Other

Sharp Corporation

Sharp Kabushiki

Pm Dimensions Kabushiki Kaisha

Fuji Daiichi Seisakusho Co., Ltd.

Tatsuo Morita

Yasuhiro Uemoto

Manabu Yanagihara

Tetsuzo Ueda

Daisuke Ueda

Kunifumi Sawamoto

Tsuyoshi Tanaka

Mikio Shiraishi

Shuhei Tsuchimoto

Hiroshi Yamaguchi

Nobuo Masuoka

Setsuo Nakajima

Nobuyuki Kaku

Kenji Ikeura

Hidetoshi Ishida

Atsushi Yoshinouchi

Kenji Fuse

Katunobu Awane

Fukuyasu Abe

Keiji Tarui

Toru Takayama

Hongyong Zhang

Fumiaki Funada

Hiroshi Inada

Shigeo Ohashi

Toshimi Abo

Hirohisa Tanaka

Hiroaki Ueno

Masataka Itoh

Robert J Markunas

Takeshi Katayama

Toshihiro Nishiwaki

Yasutoshi Nanyoshi

Shinji Ujita

Kazushi Nakazawa

Hideharu Saito

Kouichi Ishikawa

Teruzo Yamaguchi

Nariaki Shigyo

Matsuo Shiraishi

Atsushi Morimoto

Keiichiro Tokushige

Carlos Alberto Paz De Araujo

Manabu Inoue

Larry D McMillan

Hideo Nagai

Hatsuo Nagaishi

Yoshitaka Yamamoto

Naoki Makita

Shuichi Nagai

Joseph D Cuchiaro

Satoshi Takizawa

Yoshihiro Kondo

Jolanta Bozena Celinska

Yoshihisa Kawamura

Shigeo Nakajima

Akihiro Matsuda

Nobutaka Takahashi

Daisuke Shibata

Shigeru Aomori

Katsuyuki Watanabe

Yoshitaka Hata

Satoshi Nakazawa

Gota Kano

Yuichi Kashimura

Robert C Hendry

Noriyo Nishijima

Ayanori Ikoshi

Toshio Matsumura

Takashi Funai

Jeffrey W Bacon

Hiroshi Sanbuichi

Hiromi Nishino

Hisayoshi Matsuo

Yoshiharu Nakajima

Hidetoshi Shigyo

Yasuaki Murata

Terufumi Hidaka

Masakazu Hoshino

Hideki Okuyama

Yoshio Yamaguchi

Hideyuki Toyoshi

Gill Fountian

Hiroyuki Naito

Tetsuki Nishimura

Katsunori Nakatani

Kiyotoshi Sakamoto

A semiconductor device is provided which realizes speed-up and cost reduction. The semiconductor device has a high side gate driver including a depression type FET and an enhancement type FET, a low side gate driver including a depression type FET and an enhancement type FET, and a high side power FET and a low side power FET as field-effect transistors, in which the high side gate driver, the low side gate driver, the high side power FET and the low side power FET are integrated in the same chip.

Semiconductor device

A semiconductor device includes a semiconductor layer laminate disposed on a semiconductor substrate, a first and a second low-side transistors, and a first and a second high-side transistors. Each of the transistors is disposed on the semiconductor layer laminate, and includes a gate electrode, a source electrode, and a drain electrode. The second low-side transistor is disposed between the first low-side transistor and the first high-side transistor, and the first high-side transistor is disposed between the second low-side transistor and the second high-side transistor. The source electrodes of the first and the second low-side transistors are combined into one source electrode, the drain electrodes of the first and the second high-side transistors are combined into one drain electrode, and the drain electrode of the second low-side transistor and the source electrode of the first high-side transistor are combined into one first electrode.

A semiconductor element is provided which does not break down by avalanche current. A surge protection element includes: a semiconductor multi-layer comprising a nitride semiconductor; a first p-type semiconductor and a second p-type semiconductor which are disposed above the semiconductor multi-layer; a first electrode disposed above the first p-type semiconductor; and a second electrode disposed above the second p-type semiconductor.

Surge protection element and semiconductor device

An organic substance synthesis method according to an embodiment of the present invention is carried out using a submerged plasma device (), for example, and the method includes: forming a plasma through discharge in a gas including a carbon dioxide as in contact with water; and generating an organic substance including performic acid or diformyl peroxide in the water by contact between the plasma and the water.

Method for synthesizing organic matter and submerged plasma device

A normally-off bidirectional switch having two gates is connected to a transformer. The transformer has a first winding and a second winding. A first gate bias power supply configured to use power generated at the first winding to supply power for driving one of the gates of the bidirectional switch and a second gate bias power supply configured to use power generated at the second winding to supply power for driving the other gate of the bidirectional switch are provided.

Electrical power conversion device including normally-off bidirectional switch

A power semiconductor element includes: a main transistor including a first gate electrode, a first drain electrode, and a first source electrode; a sensor transistor including a second gate electrode, a second drain electrode, and a second source electrode; and a gate switch transistor including a third gate electrode, and a third drain electrode, a third source electrode. The first gate electrode, the second gate electrode, and the third drain electrode are connected, the first drain electrode and the second drain electrode are connected, the first source electrode and the second source electrode are connected via a sensor resistor, the first source electrode and the third source electrode are connected, the second source electrode and the third gate electrode are connected via a switch resistor, and the main transistor, the sensor transistor, and the gate switch transistor are formed with a nitride semiconductor.

Power semiconductor element

A switching device includes a power semiconductor chip, and a drive circuit which drives the power semiconductor chip. In the power semiconductor chip, a path through which a main current flows is connected to a first source terminal, and a ground terminal of the drive circuit is connected to a second source terminal of the power semiconductor chip. As a result, a gate drive path is separated from the path through which the main current flows, and therefore, the influence of induced electromotive force which is generated due to source parasitic inductance, on a gate-source voltage, is reduced.

Semiconductor device and power conversion device

A semiconductor device includes a semiconductor layer stackformed on a substrateand having a channel region, a first electrodeA and a second electrodeB formed spaced apart from each other on the semiconductor layer stacka first gate electrodeA formed between the first electrodeA and the second electrodeB, and a second gate electrodeB formed between the first gate electrodeA and the second electrodeB. A first control layerA having a p-type conductivity is formed between the semiconductor layer stackand the first gate electrodeA.

Semiconductor device and method for driving the same

A bidirectional switching device includes a semiconductor multilayer structure made of a nitride semiconductor, a first ohmic electrode and a second ohmic electrode which are formed on the semiconductor multilayer structure, and a first gate electrode and a second gate electrode. The first gate electrode is covered with a first shield electrode having a potential substantially equal to that of the first ohmic electrode. The second gate electrode is covered with the second shield electrode having a potential substantially equal to that of the second ohmic electrode. An end of the first shield electrode is positioned between the first gate electrode and the second gate electrode, and an end of the second shield electrode is positioned between the second gate electrode and the first gate electrode.

Bidirectional switching device and bidirectional switching circuit using the same

A bidirectional switch includes a semiconductor element and a substrate potential stabilizer. The semiconductor element includes a first ohmic electrode and a second ohmic electrode, and a first gate electrode and a second gate electrode, which are sequentially formed on the first ohmic electrode between the first ohmic electrode and the second ohmic electrode. The substrate potential stabilizer sets a potential of the substrate lower than higher one of a potential of the first ohmic electrode or a potential of the second ohmic electrode.

Bidirectional switch

A bidirectional switch includes a plurality of unit cellsincluding a first ohmic electrode, a first gate electrode, a second gate electrode, and a second ohmic electrode. The first gate electrodesare electrically connected via a first interconnectionto a first gate electrode pad. The second gate electrodesare electrically connected via a second interconnectionto a second gate electrode pad. A unit cellincluding a first gate electrodehaving the shortest interconnect distance from the first gate electrode padincludes a second gate electrodehaving the shortest interconnect distance from the second gate electrode pad

A semiconductor device includes: a semiconductor chip; a protective film and an insulating film sequentially stacked over the semiconductor chip, and each having openings that expose source, drain, and gate pads; a heat dissipation terminal made of a material having a higher thermal conductivity than the insulating film; connection terminals formed on the source, drain, and gate pads and surrounded by the insulating film; and a mount substrate having connection pads. The semiconductor chip has a source electrode having a plurality of source fingers, a drain electrode having a plurality of drain fingers, and a gate electrode having a plurality of gate fingers. The source, drain, and gate pads are connected to the source electrode, the drain electrode, and the gate electrode, respectively. The connection terminals are respectively connected to the connection pads. The heat dissipation terminal is in close contact with the mount substrate.

Semiconductor device and manufacturing method thereof

A semiconductor device includes a semiconductor layer stack formed on a substrate, a first ohmic electrode and a second ohmic electrode which are formed on the semiconductor layer stack, and are spaced from each other, a first control layer formed between the first ohmic electrode and the second ohmic electrode, and a first gate electrode formed on the first control layer. The first control layer includes a lower layer, an intermediate layer which is formed on the lower layer, and has lower impurity concentration than the lower layer, and an upper layer which is formed on the intermediate layer, and has higher impurity concentration than the intermediate layer.

A motor driving circuit includes a three-phase inverter circuit, including three upper-arm switching elementstofor driving upper arms of different phases of a three-phase motor, and three lower-arm switching elementstofor driving lower arms of different phases. At least one of the upper-arm switching elementstoand the lower-arm switching elementstois a semiconductor element that performs a diode operation. The diode operation is an operation in which a voltage less than or equal to a threshold voltage of a gate electrode G is applied to the gate electrode G with reference to a potential of a first ohmic electrode S, thereby conducting a current flow from the first ohmic electrode S to a second ohmic electrode D and blocking a current flow from the second ohmic electrode D to the first ohmic electrode S.

Motor driving circuit

Growing community of inventors

Kyoto, Japan

Tatsuo Morita