Hitachi, Ltd.

Nippon Hoso' Kyokai

Hitachi Displays, Ltd.

Other

Panasonic Liquid Crystal Display Co., Ltd.

Hitachi Device Engineering Co., Ltd.

Hitachi, Ltd. & Nippon Hoso Kyokai

Hitachi, Ltd. & Nippon Hoso Kasai

Tatsuo Makishima

Kazutaka Tsuji

Tadaaki Hirai

Yukio Takasaki

Sachio Ishioka

Keiichi Shidara

Kenkichi Tanioka

Takashi Yamashita

Kenji Sameshima

Tatsuro Kawamura

Junichi Yamazaki

Hirofumi Ogawa

Masanari Koguchi

Yasuhiko Nonaka

Hiroshi Kakibayashi

Kazuhisa Taketoshi

Masaaki Aiba

Shigeto Isakozawa

Naohiro Goto

Eisuke Inoue

Tsuyoshi Uda

Eikyuu Hiruma

Mitsuo Kosugi

Katsuhiro Kuroda

Yasuhiro Mitsui

Mikio Ichihashi

Yoshinori Imamura

Chushirou Kusano

Hirokazu Matsubara

Shiro Suzuki

Hideo Todokoro

Masaaki Kitajima

Kensuke Sekihara

Koji Takahashi

Shunsuke Morishita

Shinichi Iwasaki

Ruriko Tsuneta

Hironobu Isami

Kuniyasu Nakamura

Keiichi Kanehori

Jun Motoike

Yoshio Oowaki

Eikyu Hiruma

Yochizumi Ikeda

Hiroshi Kurihara

Yasushi Nakano

Yoshiyuki Kaneko

Hiroyuki Shinada

Hiroyuki Tanaka

Eiichi Maruyama

Masanao Yamamoto

Yasuharu Shimomoto

Kazuyuki Nagatsuma

Tetsuya Ooshima

Tetsuya Ohshima

Norifumi Egami

Shirou Suzuki

Fumihiko Ando

Mitsuhiro Kurashige

Misao Kubota

Toshio Yamagishi

Masakazu Nanba

Yoshizumi Ikeda

Hideo Tadokoro

A display device includes a display panel, and a semiconductor chip having plural bump electrodes and mounted on a substrate constituting the display panel. The plural bump electrodes include a first bump electrode arranged in the vicinity of a center for a longitudinal direction of the semiconductor chip, and a second bump electrode arranged in the vicinity of an end portion in the longitudinal direction of the semiconductor chip. The semiconductor chip has one or more than one conductive layer inside. Assuming that a surface of the semiconductor chip having the bump electrodes formed thereon is a lower side, the number of the conductive layers formed on the second bump electrode is greater than the number of the conductive layers formed on the first bump electrode. The conductive layer formed on the first and the second bump electrode includes a dummy conductive layer. Further, the plural bump electrodes are electrically connected to a wiring layer formed on a substrate constituting the display panel through an anisotropic conductive film.

Display device

In a display device which mounts drive circuits and a display control circuit on a substrate which constitutes a display panel, signal lines can be arranged on the substrate which constitutes the display panel without making the signal lines intersect each other. A plurality of drive circuits and a display control circuit are mounted on a peripheral portion of one long side of a first substrate. A printed circuit board is connected to one long side of the first substrate. Each drive circuit mounts, on a surface thereof facing the first substrate, a group of power source voltage input terminals to which a power source voltage is supplied, a group of gray-scale reference voltage input terminals to which a gray-scale reference voltage is supplied, and a group of gray-scale reference voltage output terminals which sends gray-scale reference voltages.

The present invention provides an image display device which includes the heat radiation structure with a high radiation effect without increasing the number of parts and requiring additional steps in the manufacture of the display device. A metal foil having a large area is formed on a COF film provided for mounting a driver chip on a display panel, and heat generated by the driver chip is led to the metal foil and is radiated.

Image display device

A liquid crystal display device having first and second substrates with a liquid crystal layer therebetween, a plurality of scanning signal lines and a plurality of video signal lines formed on the first substrate, and a plurality of thin film transistors formed proximate to a crossing point of the scanning signal lines and video signal lines. A light shielding layer is formed on the second substrate and overlapped with at least one of the thin film transistors and with at least one signal line of the scanning signal lines and the video signal lines in plane view. The light shielding layer has an aperture region which is formed proximate to the at least one thin film transistor and formed within the at least one signal line in plane view.

Liquid crystal display device

The present invention realizes a liquid crystal display device and an image display device which prevent the generation of flickering when power is supplied again after the supplying of power is stopped. The liquid crystal display device includes first and second substrates which are arranged to face each other in an opposed manner, a liquid crystal layer which is inserted between the first and second substrates, active elements, scanning signal lines for operating the active elements and pixel electrodes to which video signals are supplied upon operation of the active elements which are all mounted on one substrate, an orientation film which is inserted between the pixel electrodes and the liquid crystal layer, and reference electrodes which are mounted on either one or the other substrate, and the liquid crystal display device performing a display by generating the potential difference between the pixel electrodes and the reference electrode. In such a liquid crystal display device, the charge of the pixel electrodes is rapidly released when the supplying of power to the liquid crystal display device from the outside is stopped.

3-dimensional observation on the atomic arrangement and atomic species in a thin-film specimen are carried out at high speed and accuracy by an electron microscope which measures electrons emitted at high angle from the specimen. A scanning transmission electron microscope has an electron detection device comprising a scintillator converting electrons detected thereby to photons, a photoconductive-film converting photons from the scintillator detected thereby to c.a. 1000 times as many electron-hole pairs as these photons.

Electron microscope

A scintillator device and an image pickup apparatus using the scintillator, in which the scintillator for converting an input particle or electron beam image into an optical image is applied with a voltage between electrodes formed at the input plane of the electron beam and the output plane of scintillation. This voltage generates an electric field in the scintillator so that scattering of a charged particle beam in the scintillator is prevented and the resolution and S/N ratio can be improved while retaining a large amount of scintillation. Accordingly, the shift amount of low energy charged particle beams from the incident axis, which greatly influences degradation of the resolution and S/N ratio, can be suppressed.

Scintillator device and image pickup apparatus using the same

A scanning transmission electron microscope including an electron detection system having a scattering angle limiting aperture (for the inner angle) and a scattering angle limiting aperture (for the outer angle) between a specimen and an electron detector (comprising a scintillator and a light guide) and only one electron detector is installed.

A transmission electron microscope has a camera system that is linked to the optical lens system of the electron microscope by linking the number of electron beam scanning lines of the camera system with the zoom function of the optical lens system. Thus, the number of scanning lines increases as the magnification of the transferred image decreases. Further, the specimen under observation is photographed with a constant number of pixels at all times regardless of the magnification of the transferred image by the optical lens system, thus preventing a reduction in the amount of specimen information.

Transmission electron microscope with camera system

3-dimensional observation on the atomic arrangement and atomic species in a thin-film specimen as well as conventional electron microscope observations is carried out at high speed and accuracy by an electron microscope which measures electrons emitted at high angle from the specimen. For that purpose, the present invention provides a scanning transmission electron microscope having an electron detection device comprising a scintillator converting electrons detected thereby to photons, a photoconductive-film converting photons from the scintillator detected thereby to c.a. 1000 times as many electron-hole pairs as these photons (i.d. avalanche multiplication), an electron gun emitting an electron beam toward the photoconductive-film to detect the holes generated therein, and electron deflector electrodes deflecting the electron beam on the photoconductive-film. Avalanche multiplication in the photoconductive-film amplifies the signal of these photons at so high signal-to-noise ratio that the electron microscope in this invention can detect such weak electrons as emitted at high angle from the specimen at high sensitivity and resolution. Therefore this invention enables a scanning transmission electron microscope to obtain for example 3-dimensional image of point defects and impurity elements existing in joint interfaces and contacts in a ULSI device rapidly and accurately.

A photoconductive target having a transparent electrode layer and a photoconductive layer on a transparent substrate is disposed opposite to a group of integrated electron beam emitters having gate electrodes. A number of the electron emitters are activated to apply electron beams to the photoconductive target and the activated ones of the electron beam emitters are temporally changed over by an electron emitter selector circuit and a gate selector circuit. Signal charge generated and stored in the photoconductive layer is read. A time-series electric signal corresponding to a spatial distribution of the incident light is generated. A thin imaging apparatus suitable for a larger area is thus provided.

Imaging apparatus and operation method of the same

An image pickup tube is provided with the third electrode to control the potential of the region which is not scanned by an electron beam in the image pickup tube target section including a target electrode and a photo-conductive film. A method for operating this image pickup tube is also disclosed. Thus, undesired image phenomena which are generated when the image pickup tube is used with a relatively high target voltage, e.g., image distortion, shading, a waterfall phenomenon and image inversion phenomenon can be suppressed, thereby realizing a high sensitivity image pickup tube.

Image pickup tube utilizing third electrode and its operating method

A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property. In one aspect of the present invention, the amorphous semiconductor layer is amorphous Se. In another aspect of the present invention, the amorphous semiconductor layer is composed mainly of tetrahedral elements including at least an element of hydrogen or halogens. When using the amorphous semiconductor layer composed mainly of tetrahedral elements, the charge multiplication effect is produced mainly in the interior of the amorphous semiconductor, and thus it is possible to obtain a thermally stable photoconductive device having a high sensitivity while keeping a good photoresponse.

Photoconductive imaging apparatus

Disclosed is a photoelectric conversion device which comprises: a photoconductive layer made of amorphous semiconductor material which shows charge multiplication and which converts photo signals into electric signals; and a substrate having electric circuits or the like (for example switching elements) for reading the electric signals. The amorphous semiconductor material used according to the invention shows the charge multiplication action under predetermined intensity of electric field so that a high sensitive photoelectric conversion device having a gain which is not smaller than 1 is realized.

Amorphous photoelectric conversion device with avalanche

Growing community of inventors

Tokyo, Japan

Tatsuo Makishima