Hitachi Chemical Company, Ltd.

Hitachi, Ltd.

Tatsuo Kawata

Hiroyuki Sakai

Hiroki Sashima

Terumi Tsukahara

Masatsugu Ogata

Hiroshi Suzuki

Kazuhiko Kurafuchi

Hidetoshi Abe

Masaaki Yasuda

Shigeo Suzuki

Tadanori Segawa

Naoya Suzuki

Masao Kawasumi

Masanobu Fujii

Naoki Nara

Takaki Kashihara

Kazuhiko Miyabayashi

Osamu Horie

A resin-sealed semiconductor device which comprises a lead frame having a die bond pad and an inner lead, a semiconductor chip installed on the die bond pad via a die bonding material and a sealing material for sealing the semiconductor chip and the lead frame, wherein properties of the die bonding material and the sealing material after curing satisfies the following formulae: &sgr;e&lE;0.2&times;&sgr;b formula (1) Ui&gE;2.0&times;10 &times;&sgr;ei formula (2) Ud&gE;4.69&times;10 &times;ed formula (3) wherein &sgr;b (MPa)represents the flexural strength at break of the sealing material at 25&deg;, Ui (N&middot;m) and Ud (N&middot;m) represent shear strain energies of the sealing material at a soldering temperature for the inner lead and the die bonding pad, respectively, at a peak temperature during soldering, where &sgr;e&equals;(1/log(kd ))&times;Ee &times;(&agr;m&minus;&agr;e )&times;&Dgr;T formula (4), &sgr;ei&equals;Ee &times;(&agr;e &minus;&agr;m)&times;&Dgr;T formula (5), &sgr;ed&equals;log(kd )&times;Ee &times;(&agr;e &minus;&agr;m)&times;&Dgr;T Formula (6), kd : a ratio of the flexural elastic modulus Ed (MPa) of the die bonding material at 25&deg; to 1 MPa of elastic modulus (Ed >1 MPa), kd : a ratio of the flexural elastic modulus Ed (MPa) of the die bonding material at the peak temperature during the soldering to 1 MPa of elastic modulus (Ed >1 MPa), Ee : a flexural modulus (MPa) of the sealing material at 25&deg;, Ee : a flexural modulus (MPa) of the sealing material at the peak temperature during soldering, &agr;e : an average thermal expansion coefficient (1/&deg; C.) of the sealing material from forming temperature for the semiconductor to room temperature (25&deg; C.), &agr;e : an average thermal expansion coefficient (1/&deg; C.) of the sealing material from the forming temperature for the semiconductor to a peak temperature during soldering, &agr;m: a thermal expansion coefficient (1/&deg; C.) of the lead frame, &Dgr;T : the difference (&deg; C.) between the forming temperature for the semiconductor and the low temperature side temperature in the temperature cycle, and &Dgr;T : the difference (&deg; C.) between the forming temperature for the semiconductor and the peak temperature during soldering.

Resin-sealed semiconductor device, and die bonding material and sealing material for use therein

In the present invention, provided are i) an encapsulant composition comprising an epoxy resin, a curing agent, an inorganic filler, an adduct of triphenylphosphine with benzoquinone, and a hydrous bismuth nitrate oxide; the inorganic filler being mixed in an amount of from 70% by volume to 85% by volume based on the total weight of the encapsulant composition, and the hydrous bismuth nitrate oxide being mixed in an amount of from 2.5 parts by weight to 20 parts by weight based on 100 parts by weight of the epoxy resin, and ii) an electronic device having an encapsulating member comprising a cured product of this encapsulant composition.

Encapsulant composition and electronic device

An LOC structure semiconductor device having a good solder heat resistance without electrical characteristic failures due to damages to the passivation film and the diffusion layer thereunder attributing to the filler can be obtained by encapsulating an LOC structure semiconductor chip with an encapsulating material comprising an epoxy resin, a curing agent, a curing promoter, and an inorganic filler, the filler having a smaller particle size than the distance between a inner lead and a semiconductor chip and being in an amount of 80 to 95% by weight based on the total weight of the encapsulating material.

Encapsulating material and LOC structure semiconductor device using the same

A resin-encapsulated semiconductor which is free from the occurrence of blisters or cracks during soldering, suits for continuous production and has excellent moisture resistance reliability is obtained by using an epoxy resin encapsulating material which comprises

Resin-encapsulated semiconductor device

A resin encapsulated semiconductor device sealed with an epoxy resin molding material particularly containing a brominated epoxy resin as a flame retardant with the bromine content of 0.5% by weight or less, antimony oxide as a flame retardant in an amount of 2.0% by weight or more and a quaternary phosphonium tetrasubstituted borate as a curing accelerator is excellent in connection reliability at Au/Al junctions and heat resistance.

Resin encapsulated semiconductor device

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Yuki, Japan

Tatsuo Kawata