Shin-etsu Handotai Co., Ltd.

Tgk Co., Inc.

Ricoh Company, Ltd.

Kyb Corporation

Railway Technical Research Institute

Tatsuo Ito

Shigetoshi Sugawa

Tadahiro Ohmi

Yasuaki Nakazato

Koichi Kanaya

Toshikuni Shinohara

Atsuo Uchiyama

Isao Sendo

Masashi Ichikawa

Satoshi Kawakami

Shigeyoshi Netsu

Nobuhiro Ohara

Shigeyoshi Ueno

Masao Fukami

Shogo Kamoshita

Akihito Kazato

The present invention provides a single crystal wafer, wherein the main surface has a plane or a plane equivalent to a plane tilting with respect to a [100] axis of single crystal by angles of &#x3b1; (0&#xb0;&#x3c;&#x3b1;&#x3c;90&#xb0;) for the [011] direction, &#x3b2; (0&#xb0;&#x3c;&#x3b2;&#x3c;90&#xb0;) for the [01-1] direction and &#x3b3; (0&#xb0;&#x2266;&#x3b3;&#x3c;45&#xb0;) for the [10-1] or [101] direction. Thus, a single crystal wafer that can sufficiently bear device production processes even with a small wafer thickness is provided and thereby loss of single crystal raw material is reduced. Further, by using such a wafer, MIS type semiconductor devices and solar cells are provided at a low cost.

Single crystal wafer and solar battery cell

The present invention provides a method for manufacturing a semiconductor wafer comprising steps of obtaining information of a device manufacturing process, selecting a wafer manufacturing process corresponding thereto, and manufacturing a semiconductor wafer according to the selected wafer manufacturing process. The present invention also provides a method for receiving an order for manufacture of a semiconductor wafer comprising a step of connecting a device maker with a customer computer in a wafer maker, a step wherein the customer computer receives information of a device manufacturing process and a step of selecting a wafer manufacturing process corresponding thereto, and provides a system for receiving an order for manufacture of a semiconductor wafer comprising a client terminal in a device maker and a customer computer in a wafer maker wherein information of a device manufacturing process is inputted into the client terminal and is sent, the customer computer receives the information of the device manufacturing process, and a wafer manufacturing process corresponding thereto is selected. Thereby, there can be provided a method for manufacturing a semiconductor wafer, a method for receiving an order for manufacture of a semiconductor wafer, and a system for receiving an order wherein a wafer suitable for a device manufacturing process in a device maker is supplied.

Method for manufacturing semiconductor wafer, method for receiving order for manufacture of semiconductor wafer, and system for receiving order for manufacture of semiconductor wafer

The present invention provides a method for slicing a single crystal, wherein the single crystal is sliced by irradiating a portion to be sliced with an ultra short pulse laser beam while supplying a gas containing gaseous molecules or radicals that react with atoms constituting the single crystal to become stable gaseous molecules in the vicinity of the portion under slicing. Thus, there is provided a method for slicing a single crystal by using a laser processing, in which a single crystal is processed while obtaining a good sliced surface and markedly reducing a slicing loss.

Single crystal cutting method

In an expansion valve having a control mechanism with an airtight chamber, the airtight chamber is sealed by a steel ball joined into a filling hole in a metallic wall of the airtight chamber. The steel ball is fixed by resistance welding for sealing the filling hole. The diameter ratio between the inner diameter of the filling hole and the outer diameter of the spherical surface of the steel ball is set to a value falling in a range from 0.6 to 0.85.

Expansion valve

One or a plurality of silicon growth layers are formed on both sides of a silicon base substrate wafer and the product is then divided, with the dividing plane in said silicon base substrate wafer parallel to the main surface, into two pieces to obtain two substrates used for manufacturing silicon semiconductor elements. Said dividing-in-half process is a process in which said silicon base substrate wafer portion is cut along a plane parallel to the main surface, or a process which includes said cutting process followed by a process of treating the cut-surface. Said process which cuts the silicon base substrate wafer portion is a process in which the wafers are cut one by one, or cut after a plurality of them are laminated.

Method of manufacturing a substrate for manufacturing silicon

A bonded wafer enjoying high strength of bonding of component wafers thereof is produced by a method which comprises causing the surfaces for mutual attachment of two semiconductor wafers to be irradiated with an ultraviolet light in an atmosphere of oxygen immediately before the two semiconductor wafers are joined to each other. One of the two semiconductor wafers to be used for the bonded wafer optionally has an oxide film formed on one surface thereof. One of the component wafers of the bonded wafer is optionally polished until the component wafer is reduced to a thin film.

Method for production of bonded wafer

In a method for preparing a substrate for semiconductor device, the substrate is prepared either by directly bonding a bonding wafer to a base wafer or by bonding the bonding wafer to the base wafer with an oxide film formed on at least the bonding surface of the bonding wafer or the bonding surface of the base wafer to make finished semiconductor devices with an SOI structure. Prior to the bonding operation, the bonding wafer and the base wafer are subjected to the steps of (1) making the diameter of the bonding wafer smaller than the diameter of the base wafer, (2) setting the beveling width of the back side (bonding side) of the bonding wafer at 50 microns or less, and (3) beveling the front side of said base wafer so that the bonding surface of the base wafer is equal in size to the bonding surface of the bonding wafer. When the bonding wafer, which has been bonded to the base wafer, is subjected to polishing into a thin film, the peripheral portions of the bonding wafer form a smooth surface of the base wafer. This prevents the peripheral portions from chipping off.

Method for preparing a substrate for semiconductor devices

A process for producing an SOI-structured semiconductor device substrate has the steps of: reducing the diameter of the one Si-monocrystal wafer of two bonded polished Si-monocrystal wafers to be slightly smaller than that of the other Si-monocrystal wafer so that the width of the annular margin defined between the bonded surfaces of the Si-monocrystal wafers is uniform; then forming an annular polishing guard on the cylindrical surface of the one wafer and the margin of the other wafer, the polishing guard having a predetermined thickness and being made of a material providing a polishing speed lower under the same condition than the one wafer; and then polishing the one wafer so as to make it in thin film. The polishing guard provides an accurate thickness control of the resulting Si-monocrystal thin film, in particular, even at a few micrometers level.

Growing community of inventors

Tokyo, Japan

Tatsuo Ito