Nippon Steel Sumitomo Metal Corporation

Showa Denko K.k.

Nippon Steel Corporation

Mitsubishi Electric Corporation

Resonac Corporation

Tatsuo Fujimoto

Masashi Nakabayashi

Masakazu Katsuno

Hiroshi Tsuge

Noboru Ohtani

Takashi Aigo

Wataru Ito

Mitsuru Sawamura

Hirokatsu Yashiro

Nobuyoshi Tomomatsu

Takuma Kusagaki

Shinya Sato

Kenzo Makino

Wataru Tsujita

Tatsuji Irie

Taizo Hoshino

Taiga Tanaka

Kenichi Yamagata

Toshio Mukai

Kenichiro Yonezawa

Hiroaki Sakamoto

Kohei Tatsumi

Kazuhito Kamei

Kazuhiko Kusunoki

Junji Hori

Toru Inaguma

Kazuaki Seki

Takayuki Yano

Komomo Tani

Housei Hirano

Siyu Liu

The objective is to improve driving feeling at a time of acceleration operation or deceleration operation, by recognizing driver's intention of acceleration or deceleration during straight-ahead running. A driving-assistance control apparatus according to the present disclosure includes

Driving-assistance control apparatus

The posture of the driver is detected from the driver head portion, and the detected value and the driver mounting determination value are used to determine that the driver is pushing the vehicle and obtain the vehicle pushing command value. Converts the vehicle pushing command value to the target vehicle pushing assistance vesicle speed, determines whether vehicle pushing assistance can be performed based on the driver's posture and the vehicle condition, and outputs the vehicle pushing assistance permission determination. Then, from the target vehicle pushing assistance vehicle speed and the vehicle pushing assistance permission determination, the control amount for the vehicle power source that assists the vehicle pushing is calculated and output.

Driving support device

Provided are a driver posture measurement device and a vehicle control device that can accurately measure the posture of a driver with a simple configuration without attaching a plurality of wireless communication units to a vehicle. The driver posture measurement device and the vehicle control device are configured such that, between one wireless communication unit provided on the vehicle side and one wireless communication unit provided on the driver side, radio waves are radiated from the wireless communication unit provided on the vehicle side, and on the basis of a radio wave arrival angle of the radio waves arriving at the wireless communication unit provided on the driver side, the driver posture is measured.

Driver posture measurement device and vehicle control device

The control device for an internal combustion engine disclosed in the present application is a control device that determines the presence or absence of misfire based on an angle detection cycle calculated from an output signal of an angle sensor, the control device includes an arithmetic processing device and a storage device, the control device is configured so that the storage device stores the angle detection cycle calculated in a misfire detection threshold value comparison section after the reference angle section as a threshold value comparison target cycle and is configured such that the arithmetic processing device determines the presence or absence of misfire based on the misfire detection threshold value cycle calculated based on the reference detection cycle and the threshold value comparison target cycle, thereby it becomes possible to accurately determine the presence or absence of misfire in the control device for the internal combustion engine.

Control device for an internal combustion engine

An epitaxial silicon carbide single crystal wafer having a small depth of shallow pits and having a high quality silicon carbide single crystal thin film and a method for producing the same are provided. The epitaxial silicon carbide single crystal wafer according to the present invention is produced by forming a buffer layer made of a silicon carbide epitaxial film having a thickness of 1 &#x3bc;m or more and 10 &#x3bc;m or less by adjusting the ratio of the number of carbon to that of silicon (C/Si ratio) contained in a silicon-based and carbon-based material gas to 0.5 or more and 1.0 or less, and then by forming a drift layer made of a silicon carbide epitaxial film at a growth rate of 15 &#x3bc;m or more and 100 &#x3bc;m or less per hour. According to the present invention, the depth of the shallow pits observed on the surface of the drift layer can be set at 30 nm or less.

Epitaxial silicon carbide single crystal wafer and process for producing the same

To provide a controller for an internal combustion engine which can determine presence or absence of misfire with good accuracy, even when the rotational variation occurs due to factors other than misfire. A controller for an internal combustion engine calculates, as a reference detection period, the detection period detected within a reference angle interval including a top dead center; calculates a period deviation which is a deviation between the reference detection period and the each detection period; calculates a former period deviation integration value by integrating the period deviation in a former angle interval before the top dead center; calculates a later period deviation integration value by integrating the period deviation in a later angle interval after the top dead center; and determines presence or absence of misfire in the combustion stroke based on the former period deviation integration value and the later period deviation integration value.

Controller which determines a misfire for an internal combustion engine

An epitaxial silicon carbide single crystal wafer and a method for producing the same, wherein the epitaxial silicon carbide single crystal wafer is produced by forming a buffer layer made of a silicon carbide epitaxial film having a thickness of 1 &#x3bc;m or more and 10 &#x3bc;m or less by adjusting the ratio of the number of carbon to that of silicon (C/Si ratio) contained in a silicon-based and carbon-based material gas to 0.5 or more and 1.0 or less, and then by forming a drift layer made of a silicon carbide epitaxial film at a growth rate of 15 &#x3bc;m or more and 100 &#x3bc;m or less per hour, thereby bringing a depth of shallow pits observed on the surface of the drift layer to 30 nm or less.

The present invention provides a method for producing an SiC single crystal, enabling obtaining an SiC single crystal substrate in which a screw dislocation-reduced region is ensured in a wide range, and an SiC single crystal substrate. The SiC single crystal substrate is produced using a seed crystal having an off angle in the off orientation from a {0001} plane by a production method wherein in advance of a growth main step of performing crystal growth to form a facet {0001} plane in the crystal peripheral part on the crystal end face having grown thereon the bulk silicon carbide single crystal and obtain more than 50% of the thickness of the obtained SiC single crystal, a growth sub-step of growing the crystal at a higher nitrogen concentration than in the growth main step and at a growth atmosphere pressure of 3.9 to 39.9 kPa and a seed crystal temperature of 2,100&#xb0; C. to less than 2,300&#xb0; C. is included.

Method for producing silicon carbide single crystal and silicon carbide single crystal substrate

A method for producing an epitaxial silicon carbide single crystal wafer comprised of a silicon carbide single crystal substrate having a small off angle on which a high quality silicon carbide single crystal film with little basal plane dislocations is provided, that is, a method for producing an epitaxial silicon carbide single crystal wafer epitaxially growing silicon carbide on a silicon carbide single crystal substrate using a thermal CVD method, comprising supplying an etching gas inside the epitaxial growth reactor to etch the surface of the silicon carbide single crystal substrate so that the arithmetic average roughness Ra value becomes 0.5 nm to 3.0 nm, then starting epitaxial growth to convert 95% or more of the basal plane dislocations at the surface of the silicon carbide single crystal substrate to threading edge dislocations.

Method for producing epitaxial silicon carbide single crystal wafer

The object is to produce with good reproducibility an epitaxial silicon carbide wafer having a high quality silicon carbide single crystal thin film with little step bunching. To achieve this object, for etching the silicon carbide single crystal substrate in the epitaxial growth furnace, hydrogen carrier gas and silicon-based material gas are used. After the etching treatment is finished as well, the epitaxial growth conditions are changed in the state in the state supplying these gases. When the conditions stabilize, a carbon-based material gas is introduced for epitaxial growth.

Method for producing epitaxial silicon carbide wafers

The present invention provides a method of epitaxial growth of an SiC thin film by the thermal CVD process wherein it is possible to improve the in-plane uniformity of the doping density and possible to grow an SiC thin film by a uniform thickness. This method is an epitaxial growth method for silicon carbide characterized by comprising adjusting a ratio of the hydrocarbon gas and silicon feedstock gas so as to become, by C/Si ratio, 0.5 to 1.5 in range, making the hydrocarbon gas contact a hydrocarbon decomposition catalyst heated to 1000&#xb0; C. to 1200&#xb0; C. so as to make at least part of the hydrocarbon gas break down into carbon and hydrogen, and supplying carbon contained in the hydrocarbon gas and silicon contained in the silicon feedstock gas to the silicon carbide single crystal substrate.

Epitaxial growth method for silicon carbide

Provided are: a silicon carbide single crystal substrate which is cut out from a silicon carbide bulk single crystal grown by the Physical Vapor Transport method; and a process for producing the same. The number of screw dislocations in one of the semicircle areas of the substrate is smaller than that in the other thereof, namely, the number of screw dislocations in a given area of the substrate is reduced. The semicircle areas of the substrate correspond respectively to the halves of the substrate. The present invention pertains to: a silicon carbide single crystal substrate which is cut out from a silicon carbide bulk single crystal grown by the Physical Vapor Transport method and which is characterized in that the average value of the screw-dislocation densities observed at multiple measurement points in one of the semicircle areas, which correspond respectively to the halves of the substrate, is 80% or less of the average value of screw-dislocation densities observed at multiple measurement points in the other of the semicircle areas; and a process for producing the same.

Silicon carbide single crystal substrate and process for producing same

The present invention provides a method of raising the rate of reduction of the dislocation density accompanying growth of an SiC single crystal to counter the increase in the threading screw dislocations formed near the interface of the seed crystal and grown SiC single crystal and thereby produce an SiC single-crystal ingot with a small threading screw dislocation density from the initial stage of growth. The present invention is a method for producing a silicon carbide single-crystal ingot growing a silicon carbide single crystal on a growth face of a seed crystal consisting of a silicon carbide single crystal by a physical vapor transport method so as to produce a silicon carbide single-crystal ingot, the method for producing a silicon carbide single-crystal ingot comprising forming step bunching with heights of steps of 10 &#x3bc;m to 1 mm and spans of terraces of 200 &#x3bc;m to 1 mm on the growth face of the seed crystal and making the silicon carbide single crystal grow on the growth face of the seed crystal by the physical vapor transport method.

Method for producing silicon carbide single-crystal ingot and silicon carbide single-crystal ingot

The present invention provides a method for producing an epitaxial silicon carbide wafer comprising epitaxially growing SiC on an SiC substrate to produce an epitaxial SiC wafer during which further reducing stacking faults and comet defects than the conventional technologies to obtain an epitaxial SiC wafer having a high quality epitaxial film. The method for producing the epitaxial silicon carbide wafer is characterized in that a pre-growth atmosphere gas flowing into the growth furnace before the start of epitaxial growth contains hydrogen gas and has a balance of an inert gas and unavoidable impurities, and the hydrogen gas is contained in 0.1 to 10.0 vol % with respect to the inert gas.

Method for producing epitaxial silicon carbide wafer

The invention provides a low resistivity silicon carbide single crystal wafer for fabricating semiconductor devices having excellent characteristics. The low resistivity silicon carbide single crystal wafer has a specific volume resistance of 0.001 &#x3a9;cm to 0.012 &#x3a9;cm and 90% or greater of the entire wafer surface area is covered by an SiC single crystal surface of a roughness (Ra) of 1.0 nm or less.

Growing community of inventors

Tokyo, Japan

Tatsuo Fujimoto