Kabushiki Kaisha Shinkawa

Shinkawa Ltd.

Toto Ltd.

Tatsunari Mii

Minoru Torihata

Hayato Kiuchi

Kuniyuki Takahashi

Shinsuke Tei

Nobuto Yamazaki

Tooru Mochida

Toshihiko Toyama

Yoshimitsu Terakado

Kazuo Sugiura

Shinichi Akiyama

Shigeru Shiozawa

Hiroaki Yoshino

Kazumasa Kimura

Fumio Miyano

Hiroshi Watanabe

Tishihiko Toyama

Takesi Suzuki

Nobuaki Hirai

Horoaki Yoshino

Mamoru Sakurai

After forming a pressure-bonded ball and a ball neck by bonding an initial ball to a pad, a capillary is moved upward, away from a lead, and then downward, thereby the ball neck is trodden on by a face portion that is on the lead side of the capillary. Subsequently, the capillary is moved upward and then toward the lead until the face portion of the capillary is positioned above the ball neck, thereby a wire is folded back toward the lead. Then, the capillary is moved downward such that a side of the wire is pressed by the capillary against the ball neck that has been trodden on. After the capillary is moved obliquely upward toward the lead and then looped toward the lead, the wire is pressure-bonded to the lead.

Wire bonding method and semiconductor device

A wire bonding method for bonding a ballwhich is formed at a tip end of a bonding wire to a padthat is a first bond point to form a first bonding partand bonding the wireto an interconnect wiringthat is a second bond point to form a second bonding part, thus connecting the padand the interconnect wiring with the wire, wherein after the ball is bonded to the first bond point and a capillaryis ascended, examination is performed to find any bonding failure of the first bonding part; and when the bonding failure at the first bond point is found, then the capillary is caused to descend to execute bonding to bond the first bonding part to the first bond point.

Wire bonding method

Wire bonding method for reducing height of a wire loop in a semiconductor device, including a first bonding step of bonding an initial ball formed at a tip end of a wire onto a first bonding point using a capillary, thereby forming a pressure-bonded ball; a wire pushing step of pushing the wire obliquely downward toward the second bonding point at a plurality of positions by repeating a sequential movement for a plurality of times, the sequential movement including moving of the capillary substantially vertically upward and then obliquely downward toward the second bonding point by a distance shorter than a rising distance that the capillary has moved upward; and a second bonding step of moving the capillary upward and then toward the second bonding point, and bonding the wire onto the second bonding point by pressure-bonding.

Semiconductor device

A wire bonding method with the process of performing a first bonding to a pad of a die that is a first bond point, and the process of performing a second bonding to an interconnect wiring (or a lead) that is a second bond point, thus connecting the pad and the interconnect wiring with a wire. A bump is first formed on a pad, and, in a wire cutting step performed during the step of forming the bump, the wire protruding from the tip end of a capillary is bent in the lateral direction to form a bent part, and then the bent part is bonded to the bump, thus completing the first bonding process; after which the wire is bonded to the interconnect wiring, thus completing the second bonding process.

A semiconductor device with improved bondability between a wire and a bump and cutting property of the wire to improve the bonding quality. In the semiconductor device, a wire is stacked on a pad as a second bonding point to form a bump having a sloped wedge and a first bent wire convex portion, and a wire is looped from a lead as a first bonding point to the bump and is pressed to the sloped wedge of the bump with a face portion of a tip end of a capillary to bond the wire to the bump. At the same time, the wire is pressed to the first bent wire convex portion using an inner chamfer of a bonding wire hole in the capillary to form a wire bent portion having a bow-shaped cross section. The wire is pulled up and cut at the wire bent portion.

Method of manufacturing semiconductor device

A semiconductor device has a first layer pressing portion that is formed by crushing a ball neck formed by bonding an initial ball onto a first layer pad of a first layer semiconductor die and pressing the side of a wire folded onto the crushed ball neck, a first wire extended in the direction of a lead from the first layer pressing portion, and a second wire that is looped from a second layer pad of a second layer semiconductor die toward the first layer pressing portion and joined onto the second layer pad side of the first layer pressing portion. Thereby, the connection of wires is performed at a small number of times of bonding, while reducing damages caused on the semiconductor dies.

Semiconductor device and wire bonding method

A wire bonding method that connects a first bonding point and a second bonding point by a wire, the method including a step that press-bonds a ball formed on a tip end of a wire to a first bonding point, thus forming a press-bonded ball; a step that slightly raises a capillary, moves the capillary toward a second bonding point and then lowers the capillary by an amount that is smaller than an amount in which the capillary was raised, and a step that raises the capillary to allow the wire to be paid out of the capillary and moves the capillary toward a second bonding point, thus connecting the wire to the second bonding point.

A wire bonding method including the steps of: descending a capillaryfrom above an external leadto press a wireto such an extent that the wire is not completely connected to the external lead, thus forming a thin partin the wire; next ascending the capillaryand the thin partto substantially the same height as a first bonding point A, then moving the capillaryin a direction away from the first bonding point A, thus making a linear wire portionand then cutting the wire at the thin part; then connecting the end(thin part) of the linear wire portionand the wire tip endat the lower end of the capillaryare connected to the external lead; and then separating the wire tip endfrom the external lead

Semiconductor device and a wire bonding method

Bump formation method and wire bonding method including a step of forming a ball on the tip end of a wire that passes through a capillary and joining this ball to an electrode pad so as to make a press-bonded ball. In the next step, the capillary is raised and moved horizontally so that the bottom flat portion of the capillary faces the press-bonded ball. Then, the capillary is lowered and the press-bonded ball is pressed, thus forming a first bump. Next, the capillary is raised and moved horizontally in a direction that is opposite from the previous horizontal-direction, thus positioning the flat portion of the capillary to face the first bump. Then, the capillary is lowered, and the wire is bent and pressed against the surface of the first bump so as to form a second bump. The wire is then cut from the second bump.

Bump formation method and wire bonding method

A wire bonding method including the steps of forming a bump by performing ball bonding of a ball by wire on a second conductor, raising a capillary to a height that is equal to or lower than the height of a ball portion that rises into a through-hole of the capillary during formation of the bump, moving the capillary in a direction that is opposite from the first conductor, lowering the capillary so as to form an inclined wedge on the bump, cutting the wire, performing the primary bonding on the first conductor, and making a loop with the wire with respect to the bump from the first conductor, thus performing the secondary bonding on the inclined wedge on the bump.

Growing community of inventors

Tachikawa, Japan

Tatsunari Mii