Kabushiki Kaisha Toyota Chuo Kenkyusho

Toyota Jidosha Kabushiki Kaisha

Nikon Corporation

Hamamatsu-photonics K.k.

Koyo Seiko Company, Ltd.

Tatsumi Hioki

Tomoyoshi Motohiro

Akio Itoh

Hiroshi Ito

Yoshiaki Fukushima

Osami Kamigaito

Shinji Inagaki

Haruo Doi

Tadashi Ichikawa

Shoji Noda

Naohiko Kato

Hirozumi Azuma

Noriaki Sugimoto

Hirofumi Kan

Toshiyuki Kawashima

Hiroaki Takebayashi

Naoki Nakamura

Yasuhiko Takeda

Masakazu Aoki

Masaru Ichikawa

Takashi Sekine

Tsuyoshi Sasaki

Jun Sugiyama

Katsushi Saito

Mikio Okamoto

Shin-ichi Towata

Nobuyuki Yamamoto

Yoshiharu Hirose

Yoshiki Fujii

Yoneyoshi Kitagawa

Kazuyuki Oguri

Yoshitaka Mori

Hiroshi Niikura

Junichi Kawamoto

Tatsuo Noritake

Tatsuya Hatanaka

Jun-ichi Kawamoto

Kenichi Kakumoto

Makoto Ogawa

Mitsutaka Kakeno

Yasushi Miyamoto

Akihiko Koiwai

Toshihiro Mouri

Shogo Hibi

An object is to be capable of inducing a nuclear fusion reaction at a relatively high efficiency and downsize a device. A nuclear fusion deviceof the present invention includes a nuclear fusion targetincluding a target substratecontaining deuterium or tritium and a thin-film layercontaining deuterium or tritium stacked on the target substrate, a vacuum containerfor storing the nuclear fusion target, and a laser unitfor irradiating two successive first and second pulsed laser lights P, Ptoward the thin-film layerof the nuclear fusion target, and the intensity of the first pulsed laser light Pis set to a value that is smaller than that of the second pulsed laser light Pand allows peeling of the thin-film layerfrom the target substrate

Neutron generation target, device, and method

A multilayered hydrogen absorbing body is provided which is formed by laminating at least two types of hydrogen absorbing materials. The degrees of strains cause due to absorption/desorption of hydrogen are different between the hydrogen absorbing materials adjacent to each other.

Multilayered hydrogen absorbing body

The present cluster-included material characterized by utilizing a porous host material for clusters having a pore larger in size than that of zeolite. The cluster-included material is obtained by forming a cluster in a pore of a mesoporous material having a pore size of 1.3 to 10 nm. When the mesoporous material is particularly a mesoporous material having a pore volume of not less than 60% of a total pore volume within a pore size range of -40 to +40% of a pore size which shows a maximum peak in a pore size distribution curve, a granular cluster having a uniform particle size or a fine-linear cluster having a uniform diameter is obtained. The cluster-included material performs the various quantum effects.

Cluster-included material

Disclosed is a positive electrode material for a secondary lithium battery excellent in high temperature cycle characteristics which is a lithium manganese oxyfluoride having a spinel structure, wherein the oxyfluoride has a composition represented by the composition formula:

Positive electrode material for secondary lithium battery

The method for producing a bulk silica porous material is presented. The obtained material has a large crystal size serving to reduce light scattering, and uniform and adjustable pore size. This can be utilized for optical and electronic functional materials. The method comprises the steps of:

Transparent bulk silica porous material with uniform pore size and

By providing a normally deposited layer as a buffer layer between a substrate and an obliquely deposited layer, it is possible to prevent contaminants on the substrate from diffusing into the obliquely deposited layer. Also, by providing a normally deposited layer as a passivation layer on the uppermost obliquely deposited layer, absorption of water vapor in the air by the obliquely deposited layer is prevented. Further, by forming a laminated object comprising obliquely deposited layers and dense normally deposited layers, strength of each obliquely deposited layer itself is increased and relaxation of its columnar structure can be suppressed with certainty because both the diffusion of contaminants from the substrate and the absorption of water in the air is prevented. Thus, by removing factors to accelerate the relaxation of columnar structure in the obliquely deposited layer, clouding of the obliquely deposited film layer can be prevented.

Obliquely deposited film element

A device for stabilizing a modulation operation of an optical modulator is provided, the optical modulator having an optical waveguide provided on a substrate and an electrode provided so as to correspond to the optical waveguide, modulating light inputted to the optical waveguide by a voltage corresponding to a physical amount to be measured which is inputted to the electrode, and outputting the modulated light. The device includes: an optical detecting device for outputting signal corresponding to intensity of light outputted from the optical modulator; a control signal outputting device for, on the basis of the output signal of the optical detecting device, outputting a control signal which compensates a phase bias fluctuation of the optical modulator; a light source device for outputting control light corresponding to the control signal; and a voltage applying device, provided in contact with the electrode of the optical modulator, for applying voltage corresponding to the control light to the electrode. Accordingly, the light source device illuminates to the voltage applying device a control light corresponding to a driving signal which negatively feeds back a phase bias fluctuation signal. In this way, the voltage applying device applies a voltage which is set so as to offset variation in phase bias fluctuation in accordance with bias fluctuation, and the phase bias fluctuation is offset.

Stabilizing device for optical modulator

An optical-optical modulator (10) has a substrate (1) made of Zcut-LiNbO.sub.3 and a Ti-diffused waveguide (2) thereon. The waveguide (2) is separated into two branches which merge later into one again and constitute the Mach-Zehnder interferometer. A pair of electrodes (3a, 3b) for phase modulation is formed on a modulation part (A) which is in the middle of the waveguide (2). A CdS.sub.x Te.sub.1-x photoelectric conversion film (6) is formed directly contacting the pair of electrodes (3a, 3b). The photoelectric film (6) is manufactured by oblique vapor deposition utilizing CdS and CdTe as two vapor deposition sources. When the photoelectric conversion film 6 receives a control light (Lc), the film (6) generates voltage. The generated voltage is applied to the pair of electrodes (3a, 3b) and becomes a modulation signal of the carrier light (La).

Optical-optical modulators

The outer surface of a rolling element (3) of a rolling bearing is coated with a lubricating film (4) having three layers (5, 6, 7). The bottommost layer (5) coated on the surface of the rolling element (3) is made of Sn; the intermediate layer (6) coated on the surface of the bottommost layer (5) is made of Ag; and the topmost layer (7) coated on the surface of the intermediate layer (6) is made of Pb. As a result of this construction, Ag serves as a binder between the Pb-Sn alloy and steel constituting an inner race member (1), an outer race member (2) and/or the rolling element (3), which in turn renders the lubricating film (4) wettable with respect to the surfaces of the inner and outer race members (1, 2) defining a race and the outer surface of the rolling element (3). Hence, stable lubrication between the bearing components can be implemented.

Rolling bearing

An amorphous thin film as a solid lubricant having a low coefficient of friction. It is composed of silicon (Si), oxygen (O), carbon (C), and hydrogen (H), and has a composition defined by the formula: Si.sub.x (O.sub.m, C.sub.n, H.sub.l-m-n).sub.1-x where, x=0.03-0.02, m=0.05-0.5, =0.1-0.9, and 0.6.ltoreq.m+n.ltoreq.0.95. This thin film exhibits extremely low friction stably from the beginning of sliding. It has superior wear resistance owing to its high hardness.

Amorphous thin film as solid lubricant on a substrate and method for

In a process for forming a solid lubricating film on an iron-base substrate, an organic material having a vapor pressure of 10.sup.-4 Torr or less at room temperature is deposited on an iron-base alloy substrate in a vacuum atmosphere in a vacuum degree of 10.sup.-4 Torr or more, and simultaneously ions of a metal element having a chemical affinity to carbon is irradiated on the iron-base alloy substrate at a dose of 1.times.10.sup.16 ions/cm.sup.2 or more, the ions having an energy of 5 keV or more. Accordingly, the iron-base substrate is coated with a solid lubricating film which includes an atom mixture layer including carbide of the metal element and alloy of iron and the metal element and a carbon layer including amorphous carbon. Hence, the solid lubricating film has an excellent lubricating property as well as a high adhesion property to the iron-base substrate. Namely, the excellent lubricating property will last for a long period of time.

Process for forming solid lubricating film on iron-base alloy substrate

A ceramic member composed of a ceramic material which is coated with a solid lubricating film. The solid lubricating film is formed on the surface of the ceramic material by heating and evaporating in a vacuum atmosphere having a vacuum degree of not less than 10.sup.-4 Torr an organic material which has a vapor pressure of not more than 10.sup.-4 Torr at room temperature while implanting the ions of a gas element having an energy of not less than 1 keV on the surface of the organic material at the rate of not less than 1.times.10.sup.15 ions/cm.sup.2. A method of forming such a solid lubricating film on the surface of a ceramic material is also disclosed.

Method of forming solid lubricaitng film on ceramic material and product

A method of strengthening ceramic material by forming a metal film on the surface of the ceramic material and irradiating ions of high energy on the surface of the film. For further improvement, the material may be heat treated at a temperature of 600.degree. C. to 1600.degree. C. after the ion irradiation.

Method of strengthening ceramics

Semiconductive barium titanate having a positive temperature coefficient of resistance comprises a barium titanate semiconductor including barium titanate and a small quantity of a doping element, and at least one additive selected from among silicon nitride, titanium nitride, zirconium nitride and silicon carbide. The semiconductive barium titanate of this invention has a sharp rise in the variation of specific resistivity with temperature change and a large specific resistivity ratio in the PTC temperature region, and can be produced with high reproducibility, since a widely differing quantity of the doping element can be effectively added to barium titanate.

Semiconductive barium titanate

Growing community of inventors

Nagoya, Japan

Tatsumi Hioki