Osaka University

The Japan Steel Works, Ltd.

Tatsumi Goto

Takahisa Jitsuno

Keiu Tokumura

Toshio Inami

Hideaki Kusama

Ryotaro Togashi

A laser crystallization method in which an amorphous silicon thin filmformed on a substrateis irradiated with a laser beam, the method including the steps of providing the amorphous silicon thin filmwith an absorbent to form an absorbent layeron the desired specific local areas of the amorphous silicon thin filmand laser annealing for crystallizing the specific local areas of the amorphous silicon thin filmby irradiating the amorphous silicon thin filmincluding the specific local areas with a semiconductor laser beam L having a specific wavelength absorbable by the absorbent layerand unabsorbable by the amorphous silicon thin filmfor heating the absorbent layer

Growing community of inventors

Kanagawa, Japan

Tatsumi Goto