Stanley Electric Co., Ltd

Tatsuma Saito

Mamoru Miyachi

Takanobu Akagi

Yusuke Yokobayashi

Takako Chinone

Ryosuke Kawai

Takako Hayashi

Satoshi Tanaka

Noriko Nihei

Shinichi Tanaka

Mitsunori Harada

Naochika Horio

Yoshiaki Nakazato

Shigeru Murata

Yasuyuki Shibata

Komei Tazawa

Tsutomu Okubo

Eiji Takashiro

Philip Rackow

Keima Kono

Tsutomo Okubo

A vehicle lighting fixture can eliminate the use of a phosphor member that causes the reduced color rendering properties and the occurrence of color separation, specifically, can enhance the color rendering properties and suppress the occurrence of color separation more than a conventional white light source that use a semiconductor light emitting element such as an LD and a phosphor member (wavelength converting member). The vehicle lighting fixture includes: a supercontinuum light source configured to output supercontinuum light containing light in a visible wavelength region, and an optical system configured to control the supercontinuum light output from the supercontinuum light source.

Vehicle lighting fixture

A step of forming, on a surface of a semiconductor structure layer, easily-to-be-etched portions arranged on the basis of crystal directions on the surface of the semiconductor structure layer and a step of subjecting the surface of the semiconductor structure layer to wet etching to form an uneven structure surface including a plurality of protrusions derived from a crystal structure of the semiconductor structure layer on the surface of the semiconductor structure layer are included.

Semiconductor light-emitting element and method of manufacturing the same

The disclosed subject matter relates to a reliable laser light-emitting apparatus. The laser light-emitting apparatus can include a laser chip, which is sealed by a first base board having an opening, a second base board and a wavelength converting board. The wavelength converting board can be attached between the first base board and the second base board so as to be located between the opening and the laser chip. A laser beam emitted from the laser chip can be emitted from the opening via the wavelength converting board, and heats generated from the laser chip and the wavelength converting board can efficiently radiate from the first base board and the first base board. Thus, the disclosed subject matter can provide reliable semiconductor light-emitting apparatuses, which can emit various color lights having favorable optical characteristics and which can be used for lighting units such as a headlight under the tough environments.

Laser light-emitting apparatus

A semiconductor light emitting device including a plurality of light emitting elements can be miniaturized while enabling to emit light with high luminance. The semiconductor light emitting device can include a mounting substrate, and a plurality of semiconductor light emitting elements mounted on the mounting substrate side by side, each of the semiconductor light emitting elements having a semiconductor structure layer that can include a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type opposite to the first conductivity type, which are layered in that order. Each of the semiconductor light emitting elements can have a resonator constituted by end surfaces of the semiconductor structure layer opposite to each other, and also has a recessed portion recessed from the surface of the second semiconductor layer toward the active layer.

Semiconductor light emitting device

A light-emitting device can prevent light from leaking through an unwanted area (or an unintended area) and can improve color unevenness and brightness unevenness. A method of producing such a light-emitting device, can include: disposing a plurality of light-emitting elements on a surface of a supporting substrate; forming a reflecting layer on the respective light-emitting elements along peripheries of the light-emitting elements facing an area between the light-emitting elements; forming a wavelength conversion layer so as to embed the plurality of light-emitting elements therein on the supporting substrate; and irradiating the wavelength conversion layer with laser beams to remove the wavelength conversion layer disposed at the area between the light-emitting elements.

Light-emitting device and method of producing the same

The semiconductor optical device has a chip of semiconductor lamination having a first semiconductor layer of a first conductivity type having a first surface, a second semiconductor layer of a second conductivity type opposite to the first conductivity type having a second surface, and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, the chip having side surface including a first side surface which is contiguous to the second surface, forms an obtuse angle with the second surface, extends across the second semiconductor layer and the active layer, and enters the first semiconductor layer, and a cracked surface which is contiguous to the first side surface, a first conductivity type side electrode formed on the first surface, and a second conductivity type side electrode formed on the second surface, wherein in-plane size of the semiconductor lamination is 50 &#x3bc;m or less.

Manufacture method of making semiconductor optical device

A light emitting element includes a semiconductor structure layer, a reflective electrode layer formed on a part of the semiconductor structure layer, a conductor layer formed on the semiconductor structure layer with the reflective electrode layer embedded therein, and a support substrate that is arranged on the conductor layer and joined to the conductor layer via a junction layer. A high resistance contact surface is provided at an interface between the semiconductor structure layer and the conductor layer. A high resistance portion is arranged in an area opposed via the conductor layer to an area where the high resistance contact surface is provided. The conductor layer is connected to the junction layer in a peripheral area of the conductor layer outside the high resistance portion.

Light emitting element

Provided are a highly reliable semiconductor light-emitting element having uniform protrusions that are arranged regularly and have the same size and a method of producing the same. The method of producing a semiconductor light-emitting element according to the present invention includes: forming a mask layer having a plurality of openings that are arranged at equal intervals along a crystal axis of a semiconductor structure layer on the surface of the semiconductor structure layer; performing a plasma treatment on the surface of the semiconductor structure layer exposed from the openings in the mask layer; removing the mask layer; and wet-etching the surface of the semiconductor structure layer to form protrusions on the surface of the semiconductor structure layer.

Method for manufacturing semiconductor light-emitting element

A semiconductor light emitting apparatus includes semiconductor lamination of n-type layer, active layer, and p-type layer; recess penetrating the lamination from the p-type layer and exposing the n-type layer; n-side electrode formed on the n-type layer at the bottom of the recess and extending upward above the p-type layer; a p-side electrode formed on the p-type layer and having an opening surrounding the recess in plan view, the n-side electrode extending from inside to above the recess; and an insulating layer disposed between the p-side and the n-side electrodes on the p-type layer, the p-side electrode constituting a reflective electrode reflecting light incident from the active layer, the n-side electrode including a reflective electrode layer covering the opening in plan view and reflects light incident from the emission layer side, the reflective electrode layer having peripheral portion overlapping peripheral portion of the p-side electrode in plan view.

Semiconductor light emitting apparatus

A semiconductor light-emitting device comprises: a mounting substrate; a plurality of semiconductor light-emitting elements that are arranged on the mounting substrate; a light absorber that is formed so as to cover an entire region between the plurality of semiconductor light-emitting elements adjacent to each other on the mounting substrate; and a wiring group including a plurality of wirings wired to each of the plurality of semiconductor light-emitting elements.

Semiconductor light-emitting device

A method of manufacturing a semiconductor element includes forming a first bonding layer containing a metal, which forms a eutectic crystal with Au, on a first substrate to provide a first laminated body. The method also includes forming an element structure layer having a semiconductor layer on a second substrate. The method also includes forming a second bonding layer on the element structure layer to provide a second laminated body. The second bonding layer has a metal underlayer containing a metal, which forms a eutectic crystal with Au. The second bonding layer also has a surface layer that contains Au. The method also includes performing heating pressure-bonding on the first and second laminated bodies with the first and second bonding layers facing each other. The heating temperature of the second substrate in the heating pressure-bonding is higher than the heating temperature of the first substrate.

Semiconductor element and method of manufacturing same

A semiconductor light emitting element array contains: a support substrate; a plurality of semiconductor light emitting elements disposed on said support substrate, a pair of adjacent semiconductor light emitting elements being separated by street, each of the semiconductor light emitting elements including; a first electrode formed on the support substrate, a semiconductor lamination formed on the first electrode and including a stack of a first semiconductor layer having a first conductivity type, an active layer formed on the first semiconductor layer, and a second semiconductor layer formed on the active layer, and having a second conductivity type different from the first conductivity type, and a second electrode selectively formed on the second semiconductor layer of the semiconductor lamination; and connection member having electrical insulating property and optically propagating property, disposed to cover at least part of the street between a pair of adjacent semiconductor laminations.

Semiconductor light emitting element array

A semiconductor light emitting element has a cross-sectional structure comprising a support substrate, a semiconductor lamination located over the support substrate, and a joint layer located between the semiconductor lamination and the support substrate, containing a first jointing layer located on the semiconductor lamination side and a second jointing layer located on the support substrate side. In the plan view, the semiconductor lamination has corner portions and side portions along the periphery, the first jointing layer is encompassed by the second jointing layer, the second jointing layer is encompassed by the semiconductor lamination, and an annular region defined between outlines of the semiconductor lamination and of the first jointing layer has first portions corresponding to the corner portions of the semiconductor lamination and second portions corresponding to the side portions of the semiconductor lamination, widths of the first portions being narrower than widths of the second portions.

Semiconductor light emitting element

An LED device includes first and second LED elements containing a lower layer of first conductivity type, an active layer, and an upper layer of second conductivity type, wherein the second LED element has third and fourth electrodes on the lower layer, recessed portion having a side surface exposing the upper, active and lower layers, and reaching the third electrode, fifth electrode disposed on the upper layer extending on the side surface of the recessed portion, and connected with the third electrode, and groove extending from the upper layer and reaching the active layer between the third and fourth electrodes to electrically separate the third electrode from the fourth electrode.

There is provided a highly reliable semiconductor light emitting element and vehicle lighting unit as well as associated methods. The semiconductor light emitting element can include a support substrate, a semiconductor stacked body including a first semiconductor layer of a first conductivity type, an active layer formed on the first semiconductor layer, and a second semiconductor layer of a second conductivity type formed on the active layer. The element can further include a bonding layer configured to bond the support substrate and the semiconductor stacked body, the bonding layer having a side surface that forms an angle exceeding 90&#xb0; with a surface of the bonding layer on the side of the semiconductor stacked body, and an interconnection layer configured to extend from the upper surface of the semiconductor stacked body to cover the side surface of the bonding layer.

Growing community of inventors

Tokyo, Japan

Tatsuma Saito