Hamamatsu-photonics K.k.

Tatsuki Kasuya

Hisanori Suzuki

Kentaro Maeta

Hiroshi Akahori

Yasuhito Miyazaki

Takeshi Kawahara

A semiconductor photodetector includes a semiconductor substrate including a silicon substrate. The semiconductor substrate includes a second main surface as a light incident surface and a first main surface opposing the second main surface. In the semiconductor substrate, carriers are generated in response to incident light. A plurality of protrusions is formed on the second main surface. The protrusion includes a slope inclined with respect to a thickness direction of the semiconductor substrate. At the protrusion, a (111) surface of the semiconductor substrate is exposed as the slope. The height of the protrusion is equal to or more than 200 nm.

Semiconductor light detection element

An energy ray sensitive regionis divided in its horizontal direction into m columns with the vertical direction as the longitudinal direction, divided in its vertical direction into n rows with the horizontal direction as the longitudinal direction, and is thereby provided with m&#xd7;n photoelectric conversion portionsthat are arrayed two-dimensionally. Each of these photoelectric conversion portionsgenerates charges in response to the incidence of energy rays. On the front surface side of energy ray sensitive region, a plurality of transfer electrodesare disposed so as to cover energy ray sensitive region. The plurality of transfer electrodesare respectively disposed with the horizontal direction as the longitudinal direction and are aligned in the vertical direction. The respective transfer electrodesare electrically connected by voltage dividing resistors. Each voltage dividing resistoris disposed in correspondence to each transfer electrode, divides a DC output voltage from a DC power supplyto generate a DC output potential, and applies this DC output potential to the corresponding transfer electrode

Solid-state imaging device

The present invention relates to an energy ray detecting element having a structure for reducing noise effectively. The energy ray detecting element comprises an energy ray sensitive region, an output section, a plurality of electrodes, and a voltage dividing circuit. The energy ray sensitive region generates charges in response to the incidence of energy rays. On the surface of the energy ray sensitive region, each of the plurality of electrodes is arranged so as to cover a part of the energy ray sensitive region. Each electrode is electrically connected to the voltage dividing circuit that includes a plurality of voltage dividing resistors serially connected to each other. The voltage dividing circuit divides a DC output voltage from a DC power supply by using the voltage dividing resistors, and thereby providing a corresponding DC output potential to each of the electrodes. The output section accumulates the charges generated in the energy ray sensitive region and outputs a current signal or a voltage signal corresponding to the accumulated charge amount.

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Hamamatsu, Japan

Tatsuki Kasuya