Sony Corporation

Tatsuji Oda

Kazuhide Koyama

Keiichi Maeda

Toshiharu Suzuki

Takayoshi Mamine

Osamu Yoneyama

In a method for making a multilayer wiring structure, a second insulating film having an etching rate slower than a first insulating film is provided on the first insulating film covering a wiring pattern; an opening is formed in the second insulating film in a portion corresponding to a connecting hole to be formed afterwards; a third insulating film having an etching rate faster than the second insulating film is provided on the opening and the second insulating film; a groove is formed, so as to expose the opening, in the third insulating film in a portion where an upper-layer wiring pattern is formed, and the connecting hole reaching the wiring pattern is formed; and a connecting plug is formed by packing a conductive material in the connecting hole, and the upper-layer wiring pattern is formed by packing a conductive material in the groove.

Method for making multilayer wiring structure

A semiconductor laser device having a stripe light emission region formed in an active layer, a bent portion formed in the active layer on a light end portion of the light emission region in a range of approximately the width of the light emission region, and a flat portion formed in the active layer the width of which is made larger than that of the light emission region inside of the end portion of the light emission region.

Growing community of inventors

Kanagawa, Japan

Tatsuji Oda