Renesas Electronics Corporation

Renesas Technology Corp.

Renesas Electrics Corporation

Tatsuhiro Seki

Yukihiro Sato

Hiroyuki Nakamura

Atsushi Fujiki

Koichi Arai

Ichio Shimizu

Nobuya Koike

Koichi Yamazaki

Kisho Ashida

Norio Kido

Katsuo Ishizaka

Hisashi Toyoda

A semiconductor device includes a normally-on junction FET having a first gate electrode, a first source electrode and a first drain electrode, a normally-off MOSFET having a second gate electrode, a second source electrode and a second drain electrode, and a voltage applying unit which applies a voltage to the first gate electrode. The first source electrode of the junction FET is electrically connected to the second drain electrode of the MOSFET, and the junction FET is thus connected to the MOSFET in series, and the voltage applying unit applies a second voltage with a polarity opposite to that of a first voltage applied to the first gate electrode when the junction FET is brought into an off-state, to the first gate electrode when the MOSFET is in an on-state.

Semiconductor device

A semiconductor device includes a normally-on junction FET having a gate electrode, a source electrode and a drain electrode and a normally-off MOSFET having a gate electrode, a source electrode and a drain electrode. The source electrode of the junction FET is electrically connected to the drain electrode of the MOSFET, and the junction FET is thus connected to the MOSFET in series. The gate electrode of the junction FET is electrically connected to the gate electrode of the MOSFET.

A semiconductor device is improved in reliability. A switching power MOSFET and a sense MOSFET for sensing a current flowing in the power MOSFET, which is smaller in area than the power MOSFET, are formed in one semiconductor chip. The semiconductor chip is mounted over a chip mounting portion via a conductive bonding material, and sealed in a resin. Over the main surface of the semiconductor chip, a metal plate is bonded to a source pad electrode of the power MOSFET. In the plan view, the metal plate does not overlap a sense MOSFET region where the sense MOSFET is formed. The metal plate is bonded to the source pad electrode so as to surround three of the sides of the sense MOSFET region.

To improve the performance and reliability of semiconductor devices. For the semiconductor chip CP, power MOSFETs Qand Qfor the switch, a diode DDfor detecting the heat generation of the power MOSFET Q, a diode DDfor detecting the heat generation of the power MOSFET Q, and plural pad electrodes PD are formed. The power MOSFET Qand the diode DDare arranged in a first MOSFET region RGon the side of a side SD, and the power MOSFET Qand the diode DDare arranged in a second MOSFET region RGon the side of a side SD. The diode DDis arranged along the side SD, the diode DDis arranged along the side SD, and all pad electrodes PD other than the pad electrodes PDSand PDSfor the source are arranged along a side SDbetween the diodes DDand DD

A semiconductor device having a plurality of chips is reduced in size. In HSOP (semiconductor device) for driving a three-phase motor, a first semiconductor chip including a pMISFET and a second semiconductor chip including an nMISFET are mounted over each of a first tab, second tab, and third tab. The drains of the pMISFET and nMISFET over each tab are electrically connected with each other. Thus, two of six MISFETs can be placed over each of three tabs divided in correspondence with the number of phases of the motor, and they can be packaged in one in a compact manner. As a result, the size of the HSOP for driving a three-phase motor, having a plurality of chips can be reduced.

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Tokyo, Japan

Tatsuhiro Seki