Shin-etsu Quartz Products Co., Ltd.

Heraeus Quarzglas Gmbh & Co Kg

Heraeus Quarzglas Gmbh

Other

Shin-estu Quartz Products Co., Ltd.

Tatsuhiro Sato

Hiroyuki Watanabe

Nobumasa Yoshida

Akira Fujinoki

Kyoichi Inaki

Shigeo Mizuno

Mitsuo Matsumura

Mamoru Endo

Tohru Yokota

Tomoyuki Shirai

Hiroyuki Miyazawa

Yasuo Ohama

Satoshi Soeta

Achim Hofmann

Hiroshi Matsui

Toshiyuki Kato

Tetsuya Igarashi

Juergen Weber

Tohru Segawa

Takayuki Imaizumi

Tomoichi Kumata

Makoto Tanaka

Katsuhide Orikasa

Kazuo Koya

Takahiro Kaitou

Christian Gebauer

Ralf Schneider

Itsuo Araki

Provided is a method for producing a synthetic opaque quartz glass where flame processing can be performed in high purity with a simple way and even a large sized one can be produced, and the synthetic opaque quartz glass. A method for producing a synthetic opaque quartz glass which comprises the step of heating and burning a quartz glass porous body under a pressure of from 0.15 MPa to 1000 MPa at a temperature of from 1200 &#xb0; C. The quartz glass porous body is prepared by depositing quartz glass particles which are produced by hydrolyzing a silicon compound with an oxyhydrogen flame.

Synthetic opaque quartz glass and method for producing the same

It is an object of the invention to provide a synthetic silica glass for a cladding of a core from a fiber laser. The refractive index should be low and there should be no foaming foreign substances. This object is achieved by a synthetic silica glass for an optical element, which contains paramagnetic E' defect centers in an amount that is sufficient to set the absorption coefficient at 215 nm is in the range between 0.001 cmand 2 cm; it contains paramagnetic oxygen defect centers in an amount that is sufficient to set the absorption coefficient at 250 nm is in the range between 0.001 cmand 2 cm; the OH group concentration is 5 wtppm or less; the viscosity at 1100&#xb0; C. is in the range between 1&#xd7;10poise and 1&#xd7;10; the total content of metallic elements of Group 3 and Group 13 of the periodic table is 50.000 wtppm or less; and the relative refractive index difference of said synthetic silica glass is in the range between +0.03 % to +3 %, in relation to a synthetic fused silica glass with the absorption coefficient at 215 nm being less than 0.001 cm, the absorption coefficient at 250 nm being less than 0.001 cm, and the total concentration of the metallic elements contained being 1 wtppm or less, in the wavelength range of 600 nm or more and 1700 nm or less.

Synthetic silica glass, especially for the cladding of an optical fiber and a manufacturing method for the synthetic silica glass

Provided in a facile manner are a black synthetic quartz glass with a transparent layer, which meets demands for various shapes, has a black portion satisfying required light shield property and emissivity in an infrared region, keeps a purity equivalent to that of a synthetic quartz glass in terms of metal impurities, has a high-temperature viscosity characteristic comparable to that of a natural quartz glass, can be subjected to high-temperature processing such as welding, does not release carbon from its surface, and is free of bubbles and foreign matter in the transparent layer and the black quartz glass, and at an interface between the transparent layer and the black quartz glass, and a production method therefor.

Black synthetic quartz glass with transparent layer and method for producing the same

A mixed quartz powder contains quartz powder and two or more types of doping element in an amount of from 0.1 to 20 mass %. The aforementioned doped elements include a first dope element selected from the group consisting of N, C and F, and a second dope element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, the lanthanides and the actinides. The 'quartz powder' is a powder of crystalline quartz or it is a powder of glassy SiOparticles. It is made form natural occurring quartz or it is fabricated synthetically. The 'quartz powder' may be doped. The compounding ratio of the total amount (M1) of the aforementioned first elements and the total amount (M2) of the aforementioned second elements as the ratio of the number of atoms (M1)/(M2) is preferably from 0.1 to 20. Al as well as the aforementioned doped elements is preferably included in a mixed quartz powder of this invention.

Method for producing quartz glass using a mixed powder

The invention starts from a known component of quartz glass for use in semiconductor manufacture, which component at least in a near-surface region shows a co-doping of a first dopant and of a second oxidic dopant, said second dopant containing one or more rare-earth metals in a concentration of 0.1-3% by wt. each (based on the total mass of SiOand dopant). Starting from this, to provide a quartz glass component for use in semiconductor manufacture in an environment with etching action, which component is distinguished by both high purity and high resistance to dry etching and avoids known drawbacks caused by co-doping with aluminum oxide, it is suggested according to the invention that the first dopant should be nitrogen and that the mean content of metastable hydroxyl groups of the quartz glass is less than 30 wtppm.

Component of quartz glass for use in semiconductor manufacture and method for producing the same

Mixed powder and a method for producing quartz glass using the powder

First of all, there is provided a production process of a synthetic quartz glass which has less impurity, has a high-temperature viscosity characteristic equal to or more than that of a natural quartz glass, and hardly deforms even in a high-temperature environment, and especially a production process of a highly heat resistant synthetic quartz glass which is free from the generation of bubbles and is dense. Secondly, there is provided a highly heat resistant synthetic quartz glass body which is easily obtained by the production process of the present invention, and especially a transparent or black quartz glass body which is free from the generation of bubbles, is dense, has high infrared absorption rate and emission rate, and has an extremely high effect for preventing diffusion of alkali metal. The process is a process of producing a highly heat resistant quartz glass body having an absorption coefficient at 245 nm of 0.05 cmor more, and the silica porous body was subjected to a reduction treatment, followed by baking, thereby forming a dense glass body.

Production process of synthetic quartz glass

An object of the present invention is to provide a quartz glass body, especially a quartz glass jig for plasma reaction in producing semiconductors having excellent resistance against plasma corrosion, particularly, excellent corrosion resistance against F-based gaseous plasma; and a method for producing the same. A body made of quartz glass containing a metallic element and having an improved resistance against plasma corrosion is provided that contains bubbles and crystalline phase at an amount expressed by projected area of less than 100 mmper 100 cm.

Quartz glass body having improved resistance against plasma corrosion, and method for production thereof

As a jig material to use under plasma reaction for producing semiconductors, the present invention provides a quartz glass having resistance against plasma corrosion, particularly corrosion resistance against fluorine-based plasma gases, and which is usable without causing anomalies to silicon wafers; the present invention furthermore provides a quartz glass jig, and a method for producing the same. A quartz glass containing 0.1 to 20 wt % in total of two or more types of metallic elements, said metallic elements comprising at least one type of metallic element selected from Group 3B of the periodic table as a first metallic element and at least one type of metallic element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, lanthanoids, and actinoids as a second metallic element, provided that the maximum concentration of each of the second metallic elements is 1.0 wt % or less.

Quartz glass having excellent resistance against plasma corrosion and method for producing the same

The invention provides a method for producing a quartz glass jig for use in semiconductor industries, which enables increasing the surface layer cleanliness simply and surely at low cost; it also provides a quartz glass jig improved in surface layer cleanliness. The inventive means for resolution are a method comprising processing a quartz glass raw material into a desired shape by a treatment inclusive of fire working, annealing for stress removal, and cleaning treatment to obtain the final product, the method is characterized by that it comprises performing gas phase etching step and gas phase purification step on the surface layer of the quartz glass jig after applying the annealing treatment for stress removal but before the cleaning treatment, wherein the gas phase purification step is carried out continuously after the gas phase etching step.

Method for producing quartz glass jig and quartz glass jig

As a jig material to use under plasma reaction for producing semiconductors the present invention provides a quartz glass having resistance against plasma corrosion, particularly corrosion resistance against fluorine-based plasma gases, and which is usable without causing anomalies to silicon wafers; the present invention furthermore provides a quartz glass jig, and a method for producing the same. A quartz glass containing 0.1 to 20 wt % in total of two or more types of metallic elements, said metallic elements comprising at least one type of metallic element selected from Group 3B of the periodic table as a first metallic element and at least one type of metallic element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, lanthanoids, and actinoids as a second metallic element, provided that the maximum concentration of each of the second metallic elements is 1.0 wt % or less.

It is an object of the present invention to provide a glass member resistant against plasma corrosion suitably used as a jig material in producing semiconductors, which exhibits excellent resistance against plasma corrosion, and which is free from the generation of particles. The above problem is solved by a glass member resistant to plasma corrosion, comprising a portion to be exposed to plasma gas, which is made of a glass material containing, as the essential component, one compound component selected from the group consisting of compounds expressed by one of the chemical formulae SiO&#x2014;AlO&#x2014;CaO, SiO&#x2014;AlO&#x2014;MgO, SiO&#x2014;BaO&#x2014;CaO, SiO&#x2014;ZrO&#x2014;CaO, SiO&#x2014;TiO&#x2014;BaO, provided that the constitution ratio of the compound components is within the vitrification range.

Glass member resistant to plasma corrosion

Provided are a quartz glass crucible for pulling up a silicon single crystal, with which not only a defectless silicon single crystal can be pulled but a single crystallization ratio can greatly be improved and a production method therefor. The quartz glass crucible comprises a crucible body constituted of a semi-transparent quartz glass layer and a transparent quartz glass layer formed on the inner wall surface of the crucible bass body and no expanded bubbles equal to ro more than 0.5 mm in diameter are present in a layer 1 mm in depth from an inner surface of the quartz glass crucible after the silicon single crystal is pulled up using the quartz glass crucible.

Quartz glass crucible for pulling up silicon single crystal and production method therefor

There is provided a quartz glass crucible for pulling a silicon single crystal and a production process for the crucible, wherein an inner surface of the crucible is crystallized without addition of impurities during pulling a silicon single crystal, thereby impurities serving as causes of crystal defects being not incorporated into the silicon single crystal, so that deterioration of its inner surface is suppressed to improve a crystallization ratio, and accordingly productivity of the quartz glass crucible as well as a quality of the silicon single crystal is improved, and the quartz glass crucible for pulling a silicon single crystal comprises a crucible base body (,) made of a translucent quartz glass layer and a synthetic quartz glass layer (,) formed on an inner wall surface of the crucible base body (,), wherein a portion encircled by a brown ring on an inner surface of the quartz glass crucible is uniformly crystallized during pulling the silicon single crystal.

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Koriyama, Japan

Tatsuhiro Sato