Kabushiki Kaisha Toshiba

Nikon Corporation

Tatsuhiko Ema

Shinichi Ito

Kei Hayasaki

Katsuya Okumura

Riichiro Takahashi

Rempei Nakata

Nobuhide Yamada

Katsuya Okamura

Kenji Kawano

Tomoyuki Takeishi

Jiro Mizuno

Atsushi Tsurumune

There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5&#xd7;10q&#x3b3; (mm) given with respect to a surface tension &#x3b3; (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5&#xd7;10(m&#xb7;sec/N).

Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus

There is disclosed a substrate treating method comprising supplying a treating solution onto a substrate, and continuously discharging a first cleaning solution to the substrate from a first discharge region disposed in a nozzle, while moving the nozzle and substrate with respect to each other in one direction, wherein a length of a direction crossing at right angles to the direction of the first discharge region is equal to or more than a maximum diameter or longest side of the substrate, the nozzle continuously spouts a first gas to the substrate from a first jet region, and the length of a direction crossing at right angles to the direction of the first jet region is equal to or more than the maximum diameter or longest side of the substrate.

Substrate treating method, substrate-processing apparatus, developing method, method of manufacturing a semiconductor device, and method of cleaning a developing solution nozzle

A pattern forming method comprises forming a photosensitive resin film on a substrate, exposing the photosensitive resin film, forming a pattern of the photosensitive resin film by supplying a developing solution to the photosensitive resin film, and slimming to remove a surface layer of the pattern by causing the pattern to contact with an activated water.

Method for forming a pattern and substrate-processing apparatus

There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5&#xd7;10q&#x3b3; (mm) given with respect to a surface tension &#x3b3; (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5&#xd7;10(m&#xb7;sec/N)

In this disclosure, air flow is formed above chemical liquid film and a move of the chemical liquid is generated by making the air flow into a contact with the surface of chemical liquid. Further, a negative pressure is generated in a space between a processing object substrate and a plate by rotating the plate. Consequently, uniformity of processing of chemical liquid is improved, so that liquid removing step can be carried out effectively. As a result, yield rate of chemical liquid treatment can be improved.

Chemical liquid processing apparatus for processing a substrate

An ultraviolet microscope comprises an observation device which observes a specimen with ultraviolet light; a gas supply device which, during the observation with ultraviolet light, supplies an inert gas to surroundings of the specimen; and a timing control device which controls supply timing of the inert gas by the gas supply device, and the timing control device controls the gas supply device so as to cause preliminary supply of the inert gas before the observation of the specimen with ultraviolet light, and also so as to cause regular supply of the inert gas at least during the observation of the specimen with ultraviolet light.

Observation device, ultraviolet microscope and observation method

There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5&times;10 q&ggr; (mm) given with respect to a surface tension &ggr; (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5&times;10 (m&middot;sec/N).

Using a scan coating method, a liquid film is formed on a substrate having a temperature distribution for correcting a temperature distribution of a liquid film caused by the heat of evaporation due to the volatilization of a solvent contained in the liquid film, and then the solvent is removed from the liquid film to form a coating film.

Deposition method, deposition apparatus, and pressure-reduction drying apparatus

Chemical liquid processing apparatus for processing a substrate and the method thereof

Disclosed is a film-forming method, comprising dispensing from a dispenser nozzle a coating solution, which is prepared by adding a solid component to a solvent and controlled to be spread on the substrate in a predetermined range, onto a target substrate to be processed while relatively moving the dispenser nozzle and the target substrate so as to form a liquid film on the entire surface of the target substrate, and arranging a sucking nozzle above and apart from the target substrate such that the sucking nozzle is not in contact with the surface of the liquid film so as to permit the sucking nozzle to suck the solvent vapor right under the sucking nozzle while moving the sucking nozzle relative to the target substrate, thereby removing the solvent from the liquid film and, thus, forming a coated film.

Film-forming method, film-forming apparatus and liquid film drying apparatus

A TMAH developer is applied to a to-be-processed substrate that has an organic resist film formed thereon and having an LSI pattern created by exposure, thereby developing the resist pattern, followed by rinsing processes in which, while the substrate is being rotated at 500 rpm, ozone water containing 3-ppm ozone gas is applied to the substrate for fifteen seconds, thereby decomposing organic matter sticking to the exposed surface of the substrate, and then hydrogen water containing 1.2-ppm hydrogen gas is applied to the substrate for fifteen seconds, with the substrate rotated at 500 rpm, thereby removing the decomposed organic matter from the substrate.

Growing community of inventors

Kamakura, Japan

Tatsuhiko Ema