Mitsubishi Denki Kabushiki Kaisha

Renesas Electronics Corporation

Tatsuhiko Akiyama

Kazuyuki Misumi

Ryuichiro Mori

Akira Yamazaki

Masahiro Shimizu

Kazunari Michii

Koji Bando

Naoki Izumi

Tsuyoshi Koga

Tomohiro Murakami

Katsuyuki Fukudome

Shunichi Abe

Hirotada Kuriyama

Michitaka Kimura

Kazuhito Tsutsumi

Yutaka Arita

Yoshitaka Takemoto

Tadafumi Kishimoto

To provide a technique that can improve the data retention characteristic of an MRAM device by improving the resistance against an external magnetic field in a semiconductor device including the MRAM device. A first magnetic shield material is disposed over a die pad via a first die attach film. Then, a semiconductor chip is mounted over the first magnetic shield material via a second die attach film. Furthermore, a second magnetic shield material is disposed over the semiconductor chip via a third die attach film. That is, the semiconductor chip is disposed so as to be sandwiched by the first magnetic shield material and the second magnetic shield material. At this time, while the planar area of the second magnetic shield material is smaller than that of the first magnetic shield material, the thickness of the second magnetic shield material is thicker than that of the first magnetic shield material.

Semiconductor device and method of manufacturing same

A method for manufacturing a magnetic memory chip device comprises the steps of: writing information in each of a plurality of magnetic memory chips formed on a silicon wafer; adhering a high magnetic permeability plate on a back face of the silicon wafer after writing information, the high magnetic permeability plate having a higher magnetic permeability than silicon and having a thickness of 50 um or more; dicing the silicon wafer into respective magnetic memory chips after adhering the high magnetic permeability plate.

Method for manufacturing magnetic memory chip device

A method for manufacturing a magnetic memory chip device comprises the steps of: writing information in each of a plurality of magnetic memory chips formed on a silicon wafer; adhering a high magnetic permeability plate on a back face of the silicon wafer after writing information, the high magnetic permeability plate having a higher magnetic permeability than silicon and having a thickness of 50 &#x3bc;m or more; dicing the silicon wafer into respective magnetic memory chips after adhering the high magnetic permeability plate.

A laminated semiconductor chip assembly fabricated by fixing back surfaces of first and second semiconductor chips, respectively having principal surfaces and back surfaces, to each other. Each of the principal surfaces of the laminated semiconductor chip assembly is fixed to a corresponding surface of a lead frame. A standing linear portion of a metallic wire on a ball bond side is pulled parallel to a side surface of the semiconductor chip in its thickness direction and a side surface of the inner lead in its thickness direction, and subjected to wire bonding. The formed semiconductor chip assembly is covered by a sealing resin so that an outer lead protrudes from the sealing resin. Thus, the semiconductor device can be made thin, cost can be reduced, and quality can be improved to increase capacities of electronic equipment.

Semiconductor device and a method of producing the same

In order to reduce the thickness of a semiconductor device and double its capacity, two center pad semiconductor chips stacked one on the other, back to back, are fixed to one face of a wiring substrate. The difference in the length of routing between external lands and fingers is minimized, and each of the center pads and corresponding fingers are connected via metal wires having a high conductivity. The main face of a first center pad semiconductor chip is fixed to the wiring substrate that has first and second wired faces and a through opening. The back face of the first semiconductor chip and the back face of a second semiconductor chip are fixed to each other using a bonding material. The pads on each semiconductor chip are connected to corresponding fingers on the wiring substrate via metal wires. One face of the wiring substrate is sealed with a sealing resin, and on the other face, an area in the vicinity of the through opening is sealed.

Multiple chip package semiconductor device

A boron nitride inclusion sheet is applied on the surface of a mold package enclosing a semiconductor chip so as to prevent soft error caused by a thermal neutron.

Semiconductor device including thermal neutron absorption material

A resin sealed semiconductor device includes a lead frame having a die pad; a semiconductor element mounted on the die pad; a resin sealing the lead frame and the semiconductor element, the die pad including a plurality of through holes where the semiconductor element is mounted; and a resin film bonding the semiconductor element to the die pad.

Resin sealed semiconductor device

A resin-sealed semiconductor device comprises a die pad which has through holes. Thin metal films are provided on the surfaces of the die pad except for the wall surfaces of the holes. A resin, which is used for integral molding of the die pad and a semiconductor element, flows into the holes during molding. The semiconductor device so mounted does not induce cracks in the resin and, thus, has good moisture resistance.

A semiconductor device comprises a semiconductor element which is bonded to a flat base and encapsulated in a resin. The base has a bonding section at its center to which the semiconductor element is bonded, the area of the bonding section being smaller than that of the bottom surface of the semiconductor element. The portion of the base outside the bonding section has a plurality of through holes or depressions formed in its top and bottom surfaces which increase the adhesion between the resin and the base. The bonding section may be substantially separated from the remainder of the base by elongated through holes or depressions which substantially surround the bonding section.

Growing community of inventors

Tokyo, Japan

Tatsuhiko Akiyama