Dainippon Screen Mfg. Co., Ltd.

Nidec-Read Corporation

Screen Holdings Co., Ltd.

Dainippon Screen Manufacturing Co., Ltd.

Tatsufumi Kusuda

Hiromi Murayama

Kazuyuki Hashimoto

Yasuhiro Imaoka

Norio Yamamoto

Naoto Mori

Yoko Yoshihara

Sadao Hirae

Tsutomu Ueyama

Motohiro Kono

Motohiro Kouno

Shinji Miyawaki

Ikuyoshi Nakatani

Akihiro Hosokawa

Toshiaki Aotani

Yuko Ikumi

A detection value correction system is a detection value correction system that corrects detection values of a plurality of sensors that are arranged in a line and detect a physical quantity, and includes a correction processing unit that corrects a detection value of a target sensor, which is a sensor to be corrected, among the sensors based on at least detection values of sensors adjacent to the target sensor.

Detection value correction system, coefficient calculation method, and detection value correction method

An MI sensor includes: an amorphous wire; an insulator layer formed on an outer peripheral surface of the amorphous wire; and an X-axis coil, a Y-axis coil, and a Z-axis coil which are formed, in a spiral shape, on an outer peripheral surface of the insulator layer. The X-axis coil, the Y-axis coil, and the Z-axis coil are formed of a conductive layer, and the X-axis coil, the Y-axis coil, and the Z-axis coil are arranged in directions orthogonal to each other.

MI sensor and method for manufacturing MI sensor

A coiled electronic component includes: an electronic component body which includes a coil portion having a spiral structure and formed of an electrically conductive material, and electrically conductive connection portions arranged on both ends of the coil portion; and a pair of electrodes for respectively connecting the electrically conductive connection portions to assembly portions arranged on an assembly object. The electrode includes a pair of pinching pieces for pinching the electrically conductive connection portion, and the pair of pinching pieces is opened in a manner that the electrically conductive connection portion is received and fitted therebetween.

Coiled electronic component

Coiled electronic component, coil component, manufacturing method of coil component, inductance element, T-type filter, oscillation circuit, and manufacturing method of inductance

A length measurement device includes: a placement table; cameras imaging images of imaging ranges including target points; first marks within the imaging ranges; a reference position storage unit storing positions of the first marks on a placement surface as first mark reference positions; an image position acquisition unit acquiring, on the basis of the imaged images of the cameras, the target image positions of the target points in the imaged images and the first mark image positions of the first marks in the imaged images; a target position acquisition unit determining positions of the target points on the placement surface on the basis of the target image positions and first mark image positions in the imaged images and the first mark reference positions on the placement surface; and a length acquisition unit determining, on the basis of positions of the target points, the length of a portion to have the length thereof measured.

Length measurement device

A photodetector element for receiving radiated light from a surface of a semiconductor wafer loses a detection function because the intensity of the received light exceeds a detection limit while a flash lamp emits light. Measurement is not performed during the above-mentioned period, and the intensity of the radiated light from the surface of the semiconductor wafer is measured after the flash lamp stops emitting light and the photodetector element restores the detection function. Then, the temperature of the surface of the semiconductor wafer heated by irradiation with a flash of light is calculated based on the measured intensity of the radiated light. Accordingly, even in a case where intense irradiation is performed in an extremely short period of time, such as flash irradiation, the flash of light does not act as ambient light, which enables to obtain the surface temperature of the semiconductor wafer.

Heat treatment method and heat treatment apparatus for heating substrate by irradiating substrate with light

A capacitor, a coil, a flash lamp, and a switching element such as an IGBT are connected in series. A controller outputs a pulse signal to the gate of the switching element. A waveform setter sets the waveform of the pulse signal, based on the contents of input from an input unit. With electrical charge accumulated in the capacitor, a pulse signal is output to the gate of the switching element so that the flash lamp emits light intermittently. A change in the waveform of the pulse signal applied to the switching element will change the waveform of current flowing through the flash lamp and, accordingly, the form of light emission, thereby resulting in a change in the temperature profile for a semiconductor wafer.

Heat treatment apparatus heating substrate by irradiation with light

The temperature of a semiconductor wafer is raised by light irradiation heating performed by halogen lamps. An infrared ray emitted from the semiconductor wafer whose temperature has been raised transmits through an infrared-transparent window made of silicon, and then is detected by an infrared camera. The infrared camera two-dimensionally detects the temperature of an entire surface of the semiconductor wafer. Based on a result of the detection obtained by the infrared camera, a temperature drop region having a relatively low temperature among the region of the semiconductor wafer is irradiated with laser light emitted from a laser light emission part. Accordingly, without rotating the semiconductor wafer, a temperature distribution can be made uniform with a high accuracy throughout the entire surface of the semiconductor wafer.

Heat treatment apparatus for heating substrate by light irradiation

After flash irradiation on a semiconductor wafer is started and then the temperatures of front and back surfaces of the semiconductor wafer become equal to each other, the temperature of the back surface of the semiconductor wafer, which has a known emissivity, is measured with a radiation thermometer. The emissivity of the front surface of the semiconductor wafer is calculated based on the intensity of radiated light from a black body having an equal temperature to the temperature of the back surface thereof, and the intensity of radiated light actually radiated from the front surface of the semiconductor wafer. Then, the temperature of the front surface of the semiconductor wafer heated by the flash irradiation is calculated based on the calculated emissivity and the intensity of the radiated light from the front surface of the semiconductor wafer that has been measured after the flash irradiation is started.

A photodiode excellent in responsivity receives flashes of light emitted from flash lamps in the process of heating a semiconductor wafer by irradiation with flashes of light, and the waveform of the intensity of the flashes of light versus time is acquired using voltage data obtained from an output from the photodiode. Then, a temperature calculating part performs a heat conduction simulation using the acquired data to calculate the temperature of the semiconductor wafer irradiated with the flashes of light from the flash lamps. The temperature of the semiconductor wafer is computed using data corresponding to the intensity of the flashes of light obtained from the output from the photodiode. This allows the determination of the surface temperature of the semiconductor wafer irradiated with the flashes of light, irrespective of the waveform of the emission intensity of the flash lamps.

Heat treatment apparatus and heat treatment method for heating substrate by irradiating substrate with flashes of light

When a semiconductor wafer is preheated by halogen lamps, the temperature of a peripheral portion of the semiconductor wafer is lower than that of a central portion thereof. A laser light emitting part disposed immediately under the center of the semiconductor wafer is rotated about the center line of the semiconductor wafer, while laser light is directed from the laser light emitting part toward the peripheral portion of the semiconductor wafer. Thus, the irradiation spot of the laser light exiting the laser light emitting part swirls around along the peripheral portion of the back surface of the semiconductor wafer so as to draw a circular trajectory. As a result, the entire peripheral portion of the semiconductor wafer at a relatively low temperature is uniformly heated. This achieves a uniform in-plane temperature distribution of the semiconductor wafer.

Heat treatment apparatus for heating substrate by irradiating substrate with flashes of light

In a heat treatment apparatus, a substrate held by a holding part is irradiated with light emitted from halogen lamps to perform preheating thereon and irradiated with a flash of light emitted from flash lamps to perform flash heating thereon. Part of light which is emitted from the halogen lamps and goes toward the flash lamps passes through a window hole formed in a peripheral-light shielding member and enters the substrate held by the holding part, and its energy is used for the preheating on the substrate. On the other hand, the remaining light is blocked out by the peripheral-light shielding member.

Heat treatment apparatus

A semiconductor wafer preheated to a preheating temperature is irradiated with light from flash lamps. With the light emission from the flash lamps, a surface temperature of the semiconductor wafer is maintained at a recovery temperature during a period of 10 to 100 milliseconds to induce recovery of defects created in silicon crystals. Then, with subsequent flashing light emission from the flash lamps, the surface temperature of the semiconductor wafer will reach a processing temperature to induce activation of impurities. Increasing the surface temperature of the semiconductor wafer once to the recovery temperature and then, with the flashing light emission, to the processing temperature will also prevent cracking of the semiconductor wafer.

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Kyoto, Japan

Tatsufumi Kusuda