Hitachi, Ltd.

Hitachi-high-technologies Corporation

Tatsuaki Ishijima

Ritsuo Fukaya

Hideo Todokoro

Takahiro Sato

Yoichi Ose

Akira Ikegami

Makoto Ezumi

Kazunari Asao

Katsuhiro Sasada

Muneyuki Fukuda

Kei Sakai

Takeyoshi Ohashi

Osamu Nasu

Hiromasa Yamanashi

Takuji Miyamoto

The present invention has an object to perform specimen charge measurement or focusing at a high speed and with high precision also for a specimen in which fixed charge and induced charge may be mixedly present. As one mode to achieve the object, there are proposed a specimen potential measuring method and a device to implement the method characterized in that when specimen potential information obtained by a first specimen potential measuring device disposed outside a specimen chamber or specimen potential information beforehand obtained is equal to or more than a predetermined threshold value or is more than the threshold value, measurement of specimen potential is selectively conducted by use of a second specimen potential measuring device in the specimen chamber.

Specimen potential measuring method, and charged particle beam device

The present invention has the object of providing charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices. To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges. Yet another method is disclosed for correcting the measurement length value or magnification based on fluctuations found by measuring the amount of electrostatic charge at the specified points under at least two charged particle optical conditions, and then using a charged particle beam to measure fluctuations in measurement dimensions occurring due to fluctuations in the electrostatic charge at the specified locations.

Sample electrification measurement method and charged particle beam apparatus

A method and a device are disclosed for suppressing error in electrostatic charge amount or defocus on the basis of electrostatic charge storage due to electron beam scanning when measuring the electrostatic charge amount of the sample or a focus adjustment amount by scanning the electron beam. An electrostatic charge measurement method, a focus adjustment method, or a scanning electron microscope for measuring an electrostatic charge amount or controlling an application voltage to the sample changes the application voltage to the energy filter while moving the scanning location of the electron beam on the sample.

Electrostatic charge measurement method, focus adjustment method, and scanning electron microscope

The present invention has the object of providing a charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices. To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges. Yet another method is disclosed for correcting the measurement length value or magnification based on fluctuations found by measuring the amount of electrostatic charge at the specified points under at least two charged particle optical conditions, and then using a charged particle beam to measure fluctuations in measurement dimensions occurring due to fluctuations in the electrostatic charge at the specified locations.

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Hitachinaka, Japan

Tatsuaki Ishijima