Dynex Semiconductor Limited

Tatjana Traijkovic

Florin Udrea

Gehan Anil Joseph Amaratunga

A semiconductor device comprises an active area with a voltage termination structure located adjacent to the active area at an edge portion of the device. The edge portion comprises a substrate region ( ) of a first semiconductor type. The voltage termination structure comprises at least one first termination region ( ) of a second semiconductor type, the or each first termination region having at least one of either second and third termination regions ( ) of third and fourth semiconductor types located at substantially opposing edges thereof. The second and third termination regions ( ) respectively have a higher semiconductor doping concentration than the edge portion substrate region ( ) and a lower semiconductor doping concentration than the first termination region(s) ( ).

Semiconductor device

A semiconductor device comprises an active area with a voltage termination structure located adjacent to the active area at an edge portion of the device. The edge portion comprises a substrate region ( ) of a first semiconductor type, and the voltage termination structure comprises first and second layers ( and ) formed within the substrate region. The first and second layers ( and ) define regions each of a second semiconductor type.

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Cambridge, United Kingdom

Tatjana Traijkovic