Mitsubishi Electric Corporation

Tasuku Sumino

Takayuki Hisaka

Masahiro Totsuka

Takahiro Nakamoto

A resist () is applied on a semiconductor substrate () and a first opening () and a second opening () whose width is narrower than that of the first opening () are formed at the resist (). The semiconductor substrate () is wet-etched using the resist () as a mask to form one continuous recess () below the first opening () and the second opening (). After forming the recess (), a shrink material () is cross-linked with the resist () to block the second opening () without blocking the first opening (). After blocking the second opening (), a gate electrode () is formed within the recess () via the first opening ().

Method for manufacturing semiconductor device

A gate electrode () is provided on the semiconductor layer () and a least includes a lowermost layer () in contact with the semiconductor layer (), and an upper layer () provided on the lowermost layer (). The upper layer () applies stress to the lowermost layer () to cause both edges of the lowermost layer () to curl up from the semiconductor layer ().

Semiconductor device and method for manufacturing the same

A semiconductor device includes: a semiconductor substrate; a gate electrode on the semiconductor substrate; a SiN film on the semiconductor substrate and the gate electrode; and an oxide film on the SiN film, wherein the oxide film is an atomic layer deposition film including atomic layers alternately deposited.

Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device includes: forming lower-layer wirings for a transistor, a circuit element and a plurality of contact pads on a substrate independently of each other; forming a first feed layer over an entire surface of the substrate on which the lower-layer wirings are formed; patterning the first feed layer to form a test pattern connecting terminals of the transistor to the separate contact pads independently of the circuit element; making a test on the transistor in a stand-alone state by using the contact pad and the test pattern; and after the test, connecting the transistor and the circuit element to form a circuit.

Growing community of inventors

Tokyo, Japan

Tasuku Sumino