Kabushiki Kaisha Toshiba

Tasuku Ono

Akira Yoshioka

Hidetoshi Fujimoto

Yasunobu Saito

Toshiyuki Naka

Tetsuya Ohno

Naoko Yanase

Takeshi Uchihara

Takaaki Yasumoto

Shingo Masuko

Kazuhide Abe

Atsuko Iida

Takako Motai

Miki Yumoto

Masaru Furukawa

Yukako Murakami

Yasunari Yagi

Takashi Onizawa

Yoshikazu Suzuki

A semiconductor device includes a first nitride semiconductor layer, a source electrode on the first nitride semiconductor layer, a drain electrode on the first nitride semiconductor layer, a gate electrode on the first nitride semiconductor layer and between the source electrode and the drain electrode, a gate field plate electrode that is separated from the first nitride semiconductor layer, and includes one end in direct contact with the gate electrode, and the other end positioned between the gate electrode and the drain electrode, a first interlayer insulating film that is separated from the gate electrode and is between the gate field plate electrode and the first nitride semiconductor layer, and a second interlayer insulating film that is between the gate electrode and the first interlayer insulating film and has a dielectric constant higher than a dielectric constant of the first interlayer insulating film.

Semiconductor device

A semiconductor device includes a GaN-based semiconductor layer, a source electrode on the GaN-based semiconductor layer, a drain electrode on the GaN-based semiconductor layer, and a gate electrode formed on the GaN-based semiconductor layer between the source electrode and the drain electrode. A first layer is in contact with the GaN-based semiconductor layer between the gate electrode and the drain electrode.

According to an embodiment, a semiconductor device includes a conductive substrate, a Schottky barrier diode, and a field-effect transistor. The Schottky barrier diode is mounted on the conductive substrate and includes an anode electrode and a cathode electrode. The anode electrode is electrically connected to the conductive substrate. The field-effect transistor is mounted on the conductive substrate and includes a source electrode, a drain electrode, and a gate electrode. The source electrode of the field-effect transistor is electrically connected to the cathode electrode of the Schottky barrier diode. The gate electrode of the field-effect transistor is electrically connected to the anode electrode of the Schottky barrier diode.

In one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type or an intrinsic type. The device further includes a second semiconductor layer of the first conductivity type or the intrinsic type disposed above the first semiconductor layer. The device further includes a third semiconductor layer of a second conductivity type including a first upper portion in contact with the first semiconductor layer, a second upper portion located at a lower position than the first upper portion, a first side portion located between the first upper portion and the second upper portion, and a second side portion located at a lower position than the first side portion.

HEMT semiconductor device

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Nonoichi Ishikawa, Japan

Tasuku Ono