Murata Manufacturing Co., Ltd.

Tasuku Mashio

Hiroshi Nishiyama

Toshio Ogawa

A vibrating gyroscope is mounted on a cutting device. The vibrating gyroscope is heated by halogen lamps, and a drift due to temperature variation is measured by a drift measuring device. Resonance frequencies in plural directions of the vibrating gyroscope are measured by a frequency measuring device. A cutting quantity of a vibrating body of the vibrating gyroscope is calculated from the drift due to a temperature variation and a difference of plural resonance frequencies by a control device. The cutting quantity of the vibrating body is decided by deliberating the cutting quantity obtained experientially. When the cutting quantity of the vibrating body is decided, rotating bar files are pressed against the vibrating body responsive thereto, thereby the vibrating body is cut.

Adjusting apparatus of vibrating gyroscope

Piezoelectric crystalline film on a substrate, which is a crystalline zinc oxide film with a hexagonal crystal structure and a c-axis substantially perpendicular to the substrate surface, the crystalline zinc oxide film containing, as an additive element, uranium. The piezoelectric crystalline films have high resistivity and a smooth surface, and make it possible to produce piezoelectric transducers with good conversion efficiency. Such films are made by sputtering zinc oxide and uranium onto a substrate from a film material source consisting essentially of a ceramic of zinc oxide containing uranium.

Piezoelectric crystalline film of zinc oxide and method for making same

Piezoelectric crystalline film on a substrate, which is a crystalline zinc oxide film with a c-axis substantially perpendicular to the substrate surface, the crystalline zinc oxide film containing, as an additive or additives, at least one element selected from the group of sulphur, selenium and tellurium. The piezoelectric crystalline films have high resistivity and a smooth surface, and make it possible to produce piezoelectric transducers with goal conversion efficiency. The piezoelectric crystalline films are made by sputtering zinc oxide and an additive onto a substrate from a film material source consisting essentially of a ceramic of zinc oxide containing at least one element of the group consisting of sulphur, selenium and tellurium.

Piezoelectric crystalline film on a substrate, which is a crystalline zinc oxide film with a c-axis substantially perpendicular to the substrate surface, the crystalline zinc oxide film containing, as an additive element, phosphorus. The piezoelectric crystalline films have high resistivity and a smooth surface, and make it possible to produce piezoelectric transducers with good conversion efficiency. Such films are made by sputtering zinc oxide and phosphorus onto a substrate from a film material source consisting essentially of a ceramic of zinc oxide containing phosphorus.

Piezoelectric crystallime film on a substrate, which is a crystalline zinc oxide film with a c-axis perpendicular to the substrate surface, the crystalline zinc oxide film containing one copper compound selected from the group consisting of copper sulphide, copper telluride, copper selenide, copper selenate, copper phosphide and copper phosphate. The copper is present in the crystalline zinc oxide film in the form of its sulphide, telluride, selenide, selenate, phosphide or phosphate and in the concentration of 0.01 to 20.0 atomic percent. The piezoelectric crystalline film have high resistivity and a smooth surface so that they can be used in a wide range of low to high frequencies.

Piezoelectric crystalline film of zinc oxide

Piezoelectric crystalline film of zinc oxide with a hexagonal crystal structure and a c-axis substantially perpendicular to the film surface, the crystalline film containing, as additive elements, vanadium and manganese together with or without copper. The piezoelectric crystalline films have high resistivity and a smooth surface, and make it possible to produce piezoelectric transducers with good conversion efficiency which can be used in a wide range of low to high frequencies. Such films can be made by a method comprising sputtering source materials, i.e., zinc oxide, vanadium and manganese together with or without copper onto a surface of a substrate to form a crystalline zinc oxide film, the sputtering being effected by using a film material source consisting essentially of a ceramic of zinc oxide containing vanadium, and manganese together with or without copper.

Piezoelectric crystalline film on a substrate, which is a crystalline zinc oxide film with a c-axis perpendicular to the substrate surface, the crystalline zinc oxide film containing as additive elements, vanadium, manganese and at least one element selected from the group consisting of chromium, iron, cobalt and nickel. The piezoelectric crystalline films are homogeneous and have high resistivity and a smooth surface so that they can be used as a transducer with good conversion efficiency in a wide range of low to high frequencies.

Piezoelectric crystalline film of zinc oxide containing additive elements

Piezoelectric crystalline films which consist essentially of a crystalline zinc oxide film with a c-axis perpendicular to a substrate surface, containing 0.01 to 20.0 atomic percent of vanadium. These films are prepared by radio-frequency sputtering.

Piezoelectric crystalline films and method of preparing the same

Piezoelectric crystalline films on substrate, which consist essentially of a crystalline zinc oxide film with a c-axis perpendicular to a substrate surface, containing 0.01 to 20.0 atomic percent of at least one element selected from the group consisting of iron, chromium, cobalt and nickel.

Piezoelectric crystalline films which consist essentially of a crystalline zinc oxide film with a c-axis perpendicular to a substrate surface containing 0.01 to 20.0 atomic percent of manganese with or without 0.01 to 20.0 atomic percent of copper.

Piezoelectric crystalline ZnO with 0.01 to 20.0 atomic % Mn

Piezoelectric crystalline films which consist essentially of a crystalline zinc oxide film with a c-axis perpendicular to a substrate surface, containing 0.01 to 20.0 atomic percent of bismuth. These films are prepared by radio-frequency sputtering.

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Nagaokakyo, Japan

Tasuku Mashio