Hitachi, Ltd.

Tasuhisa Aono

Ryuichi Saito

Masahisa Inagaki

Yoshihiko Koike

Junya Kaneda

Hideo Arakawa

Yasuo Kondo

Teruyoshi Abe

A composite material is provided, which has a low thermal expansivity, a high thermal conductivity, and a good plastic workability, which composite material may be applied to semiconductor devices and many other uses. The composite material is composed of metal and inorganic particles having a smaller coefficient of thermal expansion than the metal. It is characterized in that the inorganic particles are dispersed in such a way that 95% or more of them (in terms of their area in cross-section) form aggregates of complex configuration joined together. The composite material contains 20-80 vol % of copper oxide, with the remainder being copper. It has a coefficient of thermal expansion of 5&#xd7;10to 14&#xd7;10/&#xb0; C. and thermal conductivity of 30-325 W/m&#xb7;K in the range of room temperature to 300&#xb0; C. It is suitable for the radiator plate of semiconductor devices and the dielectric plate of electrostatic attractors.

Composite material including copper and cuprous oxide and application thereof

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Hitachi, Japan

Tasuhisa Aono