Applied Materials, Inc.

Solyndra, LLC

Tarpan Dixit

Wen Teh Chang

Aaron Muir Hunter

Philip Allan Kraus

Balasubramanian Ramachandran

Vedapuram S Achutharaman

Joseph Michael Ranish

Bruce E Adams

Dean C Jennings

Wolfgang R Aderhold

Abhinav Kumar

Rajesh S Ramanujam

Corina Elena Tanasa

Methods, systems, and non-transitory computer readable medium are described for automated image measurement for process development and optimization. An example method may include receiving an image of a product associated with a manufacturing process, wherein the product comprises a plurality of structures; identifying, using a trained machine learning model, a segment of the image that comprises a structure of the plurality of structures; determining a plurality of image measurements of the segment that comprises the structure; and storing the plurality of image measurements.

Self-measurement of semiconductor image using deep learning

A method of manufacturing a semiconductor layer is provided. In a first deposition during a first period of time, at least one Group IIIA element and at least one Group VIA element are deposited on a substrate or on a layer optional disposed on the substrate such as a back-electrode. During a second deposition during a second period of time, at least one Group IB element and the at least one group VIA element are deposited on the substrate or the optional layer. The one Group IB element combines with the Group VIA element to form a IBVIA composition. A first deposition state is monitored, during the second deposition by making a first plurality of measurements of a first deposition state. The second deposition is terminated or attenuated based on a function of the first plurality of measurements of the indicia of the first deposition state.

Real time process monitoring and control for semiconductor junctions

The present invention generally relates to methods for the rapid thermal processing (RTP) of a substrate. Embodiments of the invention include controlling a thermal process using either a real-time adaptive control algorithm or by using a control algorithm that is selected from a suite of fixed control algorithms designed for a variety of substrate types. Selection of the control algorithm is based on optical properties of the substrate measured during the thermal process. In one embodiment, a combination of control algorithms are used, wherein the majority of lamp groupings are controlled with a fixed control algorithm and a substantially smaller number of lamp zones are controlled by an adaptive control algorithm.

Adaptive control method for rapid thermal processing of a substrate

A rapid thermal processing (RTP) system including a transmission pyrometer monitoring the temperature dependent absorption of the silicon wafer for radiation from the RTP lamps at a reduced power level. A look-up table is created relating unnormalized values of photodetector photocurrents with wafer and radiant lamp temperatures. A calibrating step measures the photocurrent with known wafer and lamp temperatures and all photocurrents measured thereafter are accordingly normalized. The transmission pyrometer may be used for closed loop control for thermal treatments below 500&#xb0; C. or used in the pre-heating phase for a higher temperature process including radiation pyrometry in closed loop control. The pre-heating temperature ramp rate may be controlled by measuring the initial ramp rate and readjusting the lamp power accordingly. Radiation and transmission pyrometers may be included in an integrated structure with a beam splitter dividing radiation from the wafer.

Method and apparatus for low temperature pyrometry useful for thermally processing silicon wafers

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Tarpan Dixit