Mitsubishi Heavy Industries Limited

Taro Wada

Koji Nakano

Kenji Fujiwara

Yoshikatsu Kuroda

Daishi Ueno

Masahiro Funayama

Shinichi Kobayashi

Yuichi Kondo

Teruo Takeshita

Kenj Fujiwara

An object is to provide a semiconductor element module having high reliability, superior electric connection and thermal connection and capable of securing sufficient cooling performance, and also to provide a method for manufacturing the same. The semiconductor element module () comprises an IGBT () and a diode () having electrodes formed on surfaces of both sides thereof, a ceramic substrate (), in which thermal conductivity is high, having wiring circuit layers () formed on the surface thereof for bonding to surfaces of one side of the IGBT () and the diode (), a ceramic substrate (), in which thermal conductivity is high, having a wiring circuit layer () formed on the surface thereof for bonding to surfaces of other side of the IGBT () and the diode (), and a sealing member () which is sandwiched between the outer edges of the ceramic substrates () for sealing inside thereof; and these members are bonded by room-temperature bonding.

Semiconductor element module and method for manufacturing the same

Growing community of inventors

Minato-ku, Japan

Taro Wada