Fujitsu Corporation

Taro Sugizaki

Toshiro Nakanishi

Kanetake Takasaki

Kiyoshi Irino

Satoshi Ohkubo

Tatsuya Kawamura

Ken-ichi Hikazutani

Kyoichi Suguro

Atsushi Murakoshi

A manufacture method for a semiconductor device includes the steps of: (a) transporting a silicon wafer into a reaction chamber having first and second gas introducing inlet ports; (b) introducing an oxidizing atmosphere via the first gas introducing inlet port and raising the temperature of the silicon wafer to an oxidation temperature; (c) introducing a wet oxidizing atmosphere to form a thermal oxide film on the surface of the silicon wafer; (d) purging gas in the reaction chamber by using inert gas to lower a residual water concentration to about 1000 ppm or lower; and (e) introducing an NO or NO containing atmosphere into the reaction chamber via the second gas introducing inlet port while the silicon wafer is maintained above 700&#xb0; C. and above the oxidation temperature, to introduce nitrogen into the thermal oxide film and form an oxynitride film. A thin oxynitride film can be manufactured with good mass productivity.

Manufacture system for semiconductor device with thin gate insulating film

A semiconductor device is fabricated by a method comprising the steps of: selectively introducing a halogen element or argon into a device region of a silicon substrate ; and wet oxidizing the silicon substrate in an ambient atmosphere which an H O partial pressure is less than 1 atm to thereby form a silicon oxide film in the device region of the silicon substrate , and a silicon oxide film thinner than the silicon oxide film in a device region of the silicon substrate . Whereby the silicon oxide film in a device region with the halogen element or argon introduced can be selectively formed thick. The silicon oxide films are formed by the wet oxidation, whereby the gate insulation films can be more reliable than those formed by the dry oxidation.

Method for fabricating semiconductor device

A manufacture method for a semiconductor device includes the steps of: (a) transporting a silicon wafer into a reaction chamber having first and second gas introducing inlet ports; (b) introducing an oxidizing atmosphere via the first gas introducing inlet port and raising the temperature of the silicon wafer to an oxidation temperature; (c) introducing a wet oxidizing atmosphere to form a thermal oxide film on the surface of the silicon wafer; (d) purging gas in the reaction chamber by using inert gas to lower a residual water concentration to about 1000 ppm or lower; and (e) introducing an NO or N O containing atmosphere into the reaction chamber via the second gas introducing inlet port while the silicon wafer is maintained above 700&deg; C. and above the oxidation temperature, to introduce nitrogen into the thermal oxide film and form an oxynitride film. A thin oxynitride film can be manufactured with good mass productivity.

Manufacture method and system for semiconductor device with thin gate insulating film of oxynitride

Growing community of inventors

Kawasaki, Japan

Taro Sugizaki