Hitachi, Ltd.

Renesas Technology Corp.

Renesas Electronics Corporation

Taro Osabe

Tomoyuki Ishii

Kazuo Yano

Takeshi Sakata

Takashi Kobayashi

Akihiko Kandori

Hideaki Kurata

Seiichi Suzuki

Ryuzo Kawabata

Kazumasa Yanagisawa

Bryan Atwood

Yudai Kamada

Atsuko Yamaguchi

Yoshinori Momonoi

Yuudai Kamada

A magnetic measurement device has a magnetic sensor including a glass cell having alkali metal gas encapsulated therein that is configured to detect a magnetic field using a magneto-optical characteristic of spin-polarized alkali metal. A laser light source is configured to generate pump light introduced into the magnetic sensor and a coil provided in the same magnetically shielded space as the magnetic sensor is configured to apply a static magnetic field and a RF magnetic field to the magnetic sensor. A signal processor is configured to perform lock-in detection of a light detection signal transmitted through the glass cell of the magnetic sensor, control an intensity of the static magnetic field and a frequency of the RF magnetic field generated by the coil according to a lock-in detection output, and obtain a measurement signal reflecting a magnetic field intensity of an object to be measured in the magnetically shielded space.

Magnetic field measurement device

Stable magnetic field measurement is enabled without collapse of polarization or fluctuation of intensity of a laser beam incident on a glass cell of an optical pumping magnetic sensor. Excitation light generated with a light source, having optimized light intensity and polarized wave, through frequency stabilization, intensity control and polarized-wave control, is introduced via a polarized wave holding optical fiber to a magnetic sensor provided in a magnetic shield, and magnetic field measurement is performed by optical pumping using magneto-optical properties of spin-polarized alkali metal. The magnetic sensor has a structure where a lens, a polarization optical device, the glass cell and a photodetector, are integrally accommodated in a non-magnetic case.

Optical pumping magnetometer

In order to provide a magnetic field measuring apparatus facilitating the pressure control in a gas cell, or capable of inspecting the internal pressure of the gas cell without using any special process, the magnetic field measuring apparatus is configured such that a process layer of the magnetic field measuring apparatus has such a structure that includes a first hollow portion and a second hollow portion provided opposed to first hollow portion with a first isolation wall interposed therebetween. Alternatively, a method for manufacturing the magnetic field measuring apparatus includes breaking the first isolation wall after generating alkali metal (FIG.and FIG.).

Magnetic field measuring apparatus and method for manufacturing same

A measurement tool apparatus for evaluating degradation of pattern features in a semiconductor device manufacturing process. The measurement tool apparatus detects variations in the patterns from SEM images thereof and extracts pattern edge points along the circumference of each pattern. The measurement tool apparatus compares the pattern edge points to corresponding edge points of an ideal shape so as to determine deviation of the patterns. Metrics are derived from analysis of the deviations. The measurement tool apparatus uses the metrics in calculating an index representative of the geometry of edge spokes of the pattern, an indicator of the orientation of the edge spokes, and/or anticipated effects of the edge spokes on device performance.

Apparatus for evaluating degradation of pattern features

For providing a cheap semiconductor memory device with improving reliability by level of a cell, in the place of escaping from defects on memory cells electrically, through such as ECC, and further for providing a cell structure enabling scaling-down in the vertical direction with maintaining the reliability, in a semiconductor memory device, upon which high-speeded read-out operation is required, a charge storage region is constructed with particles made from a large number of semiconductor charge storage small regions, each being independent, thereby increasing the reliability by the cell level.

Semiconductor device

Disclosed is a non-volatile semiconductor memory device that uses a inversion layer provided on a semiconductor substrate as a data line. The memory device can reduce variation of characteristics among memory cells and can reduce bit cost. A plurality of assist gates are formed in the upper part of a p-type well through a gate oxide film. In the upper part of an interlayer insulator that covers those assist gates are formed word lines that are used as control electrodes. The width of those word lines is, for example, 0.1 &#x3bc;m, and each word line is separated from its adjacent word lines by a side wall spacer that is a silicon oxide film having a thickness of about 20 nm.

Semiconductor memory device and method for producing the same

Semiconductor non-volatile memory cell with a plurality of charge storage regions

An object of the present invention is to provide a semiconductor memory device suitable for larger-capacity storage because of its ability to store 3 or more bits in one element and capable of a high-speed and high-efficiency write operation due to a reduced leakage current during the write operation and provide a fabrication method therefor. According to the present invention, each of elements has a source region, a drain region, a control gate, two charge storage regions, and one or more assist gates. During a write operation, source side injection writing is performed with respect to a write target element by using the assist gates, while adjacent elements are isolated by field isolation using the assist gates.

Non-volatile semiconductor memory

In a semiconductor flash memory required to have high reliability, injection and extraction of electrons must be performed through an oxide film obtained by directly oxidizing a silicon substrate. Accordingly, the voltage to be used is a large voltage ranging from positive to negative one. In contrast, by storing charges in a plurality of dispersed regions, high reliability is achieved. Based on the high reliability, transfer of electrons is permitted through not only the oxide film obtained by directly thermally oxidizing a high reliability silicon substrate but also another oxide film deposited by CVD, or the like. In consequence, a device is controlled by electric potentials of the same polarity upon writing of data and upon erasing of data.

Semiconductor memory element, semiconductor device and control method thereof

A high integration dynamic random access memory is provided by this invention. Furthermore, a write method is provided such that the cell size of two-and three-transistor gain cell memories is reduced. A dynamic memory incorporating a thin-channel transistor as the write element such that long data storage retention is achieved in the memory devices of this invention. A dynamic memory cell having low operating power and high density is also realized by this invention.

Growing community of inventors

Kokubunji, Japan

Taro Osabe