Murata Manufacturing Co., Ltd.

Koike Co., Ltd.

Taro Nishino

Takashi Iwamoto

Hisashi Yamazaki

Toshiyuki Fuyutsume

Noboru Tamura

Nakaba Ichikawa

Masaki Aruga

Katsumi Fujimoto

Tsutomu Takai

Kansho Yamamoto

Kiyoto Araki

Norihiro Hayakawa

A thermal-type flow-rate sensor includes a substrate and a detection unit that is supported by the substrate and at least an upper surface of which is exposed to a flow of a fluid. The detection unit includes: an insulating layer, a heating element arranged on an upper surface of the insulating layer, an upstream temperature measurement element that is arranged on the upper surface of the insulating layer upstream of the heating element in the flow direction that includes a pyroelectric layer, and a downstream temperature measurement element arranged on the upper surface of the insulating layer so as to be positioned downstream of the heating element in the flow direction and that includes a pyroelectric layer.

Thermal-type flow-rate sensor

A method for manufacturing an electronic component includes a first step of preparing a piezoelectric body with a flat surface, a second step of implanting ions into the piezoelectric body such that an ion-implanted layer is formed in the piezoelectric body, a third step of forming sacrificial layers on the flat surface of the piezoelectric body, a fourth step of forming an insulating body over the flat surface of the piezoelectric body and the sacrificial layers to form a piezoelectric structure, a fifth step of dividing the piezoelectric body at the ion-implanted layer to form a piezoelectric laminar structure in which a piezoelectric film separated from the piezoelectric body is bonded to the insulating body, a sixth step of forming electrodes on portions of a division surface of the piezoelectric film, and a seventh step of removing the sacrificial layers from the piezoelectric laminar structure.

Method for manufacturing electronic component

Provided is a method for manufacturing an acoustic wave device that has an excellent temperature coefficient of frequency (TCF) and high accuracy of IDT pattern forming and is capable of resisting high temperature processing of 200 degrees or more. The method for manufacturing an acoustic wave device according to the present invention includes forming an IDT () on a principal surface () of a piezoelectric substrate (), and forming a film by thermal spraying a material () having a smaller linear thermal expansion coefficient than the piezoelectric substrate onto an opposite principal surface () of the piezoelectric substrate () where the IDT () is formed.

Method for manufacturing acoustic wave device

Provided are an acoustic wave device and a method for manufacturing the same, the acoustic wave device being effectively prevented from expanding and contracting due to temperature change and having a small frequency shift. The acoustic wave device of the present invention has a piezoelectric substrate () having an IDT () formed on one principal surface of the piezoelectric substrate (), and a thermal spray film () formed on an opposite principal surface () of the piezoelectric substrate (), the thermal spray film being of a material having a smaller linear thermal expansion coefficient than the piezoelectric substrate () and having grain boundaries and pores (), at least a part of which is filled with a filling material ().

Acoustic wave device and method for manufacturing the same

Electronic component and method for manufacturing electronic component

An acoustic wave device includes an acoustic wave element including an IDT electrode provided on a substrate, and a protective film arranged to cover the acoustic wave element so as to stabilize characteristics. The protective film is a silicon nitride film composed of silicon and nitrogen as main components and when a composition ratio of the silicon to the nitrogen is represented by 1:X, X is about 1.15 or less.

Acoustic wave device

Growing community of inventors

Yasu, Japan

Taro Nishino