Canon Kabushiki Kaisha

Mitsubishi Electric Corporation

Taro Kato

Hideaki Maeyama

Tetsuhide Yokoyama

Mineo Shimotsusa

Yasuhiro Sekine

Takeshi Fushiki

Takeshi Ichikawa

Mahito Shinohara

Jun Iba

Shin Sekiya

Takehito Okabe

Genzo Momma

Shogo Moroe

Masahiro Kobayashi

Akinari Takagi

Koichiro Iwata

Kazunari Kawabata

Toshihide Koda

Hiroshi Ikakura

Teruhiko Nishiki

Keisuke Shingu

Akira Okita

Hiroaki Sano

Tadashi Sawayama

Fumihiko Ishizono

Raito Kawamura

Kei Sasaki

Kazuya Igarashi

Kentarou Suzuki

Shunsuke Takimoto

Toshiaki Iwasaki

Masao Tani

Atsuyoshi Fukaya

Kazuhiro Saito

Koichi Sato

Hidekazu Takahashi

Takeshi Mori

Hiroaki Kobayashi

Takeshi Akiyama

Hiroshi Sekine

Fumihiro Inui

Yosuke Shinomoto

Takeshi Kojima

Hajime Ikeda

Tomoyuki Noda

Nobutaka Ukigaya

Shinichi Takahashi

Masaki Okada

Takeru Ohya

Yoshiyuki Hayashi

Takehiko Soda

Masaki Kurihara

Seiichirou Sakai

Yoichi Wada

Kazuhiro Morimoto

Akira Satake

Yoichiro Handa

Kouhei Hashimoto

Yasushi Iwakura

Keiko Tada

Takafumi Miki

Yoshinori Shirafuji

Masashi Fujitsuka

Yoshihiko Fukumoto

Hiroo Akabori

Takashi Usui

Hiroyuki Nakagawa

Kosuke Asano

Shoichiro Hara

Kanichiro Sugiura

Masanori Kudo

Mayu Ishikawa

Hiroki Nagasawa

Hiroyasu Takahashi

Taskashi Usui

Takuho Hirahara

Shota Shigemori

Minoru Ishii

Tadashi Sawamaya

A photoelectric conversion apparatus includes a semiconductor substrate, first and second micro lenses, a first filter with a transmittance of infrared light, and a second filter with a transmittance of visible light. At least one photoelectric conversion portion disposed so as to overlap the first filter in a planar view and a plurality of photoelectric conversion portions disposed so as to overlap the second filter in the planar view each include a first semiconductor region and a second semiconductor region. An impurity concentration of at least a part of the second semiconductor region of the at least one photoelectric conversion portion is lower than an impurity concentration of a portion in the second semiconductor regions of the plurality of photoelectric conversion portions that is disposed at the same depth as the at least a part of the second semiconductor region.

Photoelectric conversion apparatus

A disclosed imaging device includes a plurality of pixels arranged over a plurality of rows and a plurality of columns. Each of the plurality of pixels includes a first photoelectric conversion unit, a second photoelectric conversion unit, a third photoelectric conversion unit, a microlens that collects light into the first photoelectric conversion unit, the second photoelectric conversion unit, and the third photoelectric conversion unit, a first color filter through which a light entering the first photoelectric conversion unit passes, a second color filter through which a light entering the second photoelectric conversion unit passes, and a third color filter through which a light entering the third photoelectric conversion unit passes. The first to third photoelectric conversion units are arranged in this order in a first direction, and transmittances of the first color filter and the third color filter are different from a transmittance of the second color filter.

Imaging device and imaging system

One aspect relates to an image capturing apparatus that includes a plurality of pixels and a plurality of discharge electrodes. Each of the plurality of pixels includes a first electrode arranged on a member including a multilayer wiring layer, a photoelectric conversion film arranged on the first electrode, a second electrode arranged on the photoelectric conversion film, and a microlens arranged on the second electrode and in a position that overlaps with the first electrode in a plan view. Between microlenses included in adjacent two pixels of the plurality of pixels, a gap is formed in the plan view. The discharge electrode is arranged in a position that overlaps with the gap in the plan view.

Image capturing apparatus and image capturing system

A pixel electrode includes a first electrode, a second electrode arranged so as to face the first electrode in a first direction, and a third electrode. A counter electrode is provided in an upper portion of the pixel electrode, and a photoelectric conversion layer is arranged so as to be sandwiched by the pixel electrode and the counter electrode. A length of the third electrode in a predetermined direction is shorter than a length of the first electrode and a length of the second electrode.

Imaging sensor and moving body

A heat pump apparatus, including: a two-cylinder compressor including: an electric motor; two compression units to be driven by the electric motor, the two-cylinder compressor being structured to switch between two operation modes including single operation in which one of the compression units is brought into a non-compression state, and parallel operation in which both the compression units are brought into a compression state; an inverter drive control device supplying drive power to the electric motor of the two-cylinder compressor; an operation mode detecting-determining unit determining a current operation mode based on an electric signal acquired from the inverter drive control device; and a capacity control device determining a rotating frequency of the electric motor so that a temperature of a target object is brought close to a set value, to thereby control the inverter drive control device based on a result of determination of the operation mode detecting-determining unit.

Heat pump apparatus

A photoelectric conversion apparatus has light receiving elements disposed on an imaging plane. The light receiving element includes a plurality of photoelectric conversion portions arrayed in a first direction parallel to the imaging plane, across an isolation portion, and a light guide portion extending over the plurality of photoelectric conversion portions. In a first plane which is parallel to the imaging plane and which traverses the light guide portion, a greatest width of the light guide portion in the first direction is larger than a greatest width of the light guide portion in a second direction parallel to the imaging plane and orthogonal to the first direction.

Photoelectric conversion apparatus and imaging system

An image pickup device includes a pixel region having a plurality of pixels that are two-dimensionally arranged, the plurality of pixels including a plurality of image pickup pixels and a plurality of focus detection pixels capable of phase difference detection; a plurality of microlenses arranged to correspond to respective photoelectric conversion units of respective image pickup pixels; and a plurality of microlenses arranged to correspond to respective photoelectric conversion units of the respective focus detection pixels. When at least one of the plurality of microlenses is orthogonally projected onto the corresponding photoelectric conversion unit, a vertex position of the at least one microlens is off a center position of the at least one microlens.

Image pickup device and image pickup system

An imaging device includes a plurality of pixels two-dimensionally disposed. At least part of the plurality of pixels includes a first photoelectric conversion unit and a second photoelectric conversion unit provided in a semiconductor substrate and each including a first semiconductor region of a first conductivity type for accumulating a signal charge, a first isolation region provided in the semiconductor substrate between the first photoelectric conversion unit and the second photoelectric conversion unit and including a second semiconductor region forming a first potential barrier for the signal charge in the first semiconductor region, and a second isolation region provided in the semiconductor substrate between the first photoelectric conversion unit and the second photoelectric conversion units and including a trench isolation forming a second potential barrier higher than the first potential barrier for the signal charge in the first semiconductor region.

Imaging device

An imaging device includes a pixel region in which a plurality of pixels, each including a photoelectric converter, are arranged, including an effective pixel region, an optical black region covered with a light-shielding film, and a dummy pixel region arranged between the effective pixel region and the optical black region. The pixels arranged in at least the effective pixel region and the optical black region among the plurality of the pixels each include an optical waveguide arranged above the photoelectric converter. The pixels including the optical waveguides are arranged between the effective pixel region and the optical black region so as to be spaced apart from each other by at least a one-pixel pitch.

Imaging device having an effective pixel region, an optical black region and a dummy region each with pixels including a photoelectric converter

A photoelectric conversion apparatus including a light-receiving element, including: a plurality of photoelectric conversion portions; a separating portion located between the plurality of photoelectric conversion portions; and a light guide portion surrounded by an insulation film including at least one insulation layer and provided so as to extend over the plurality of photoelectric conversion portions, and the light guide portion includes: a high refractive index part having a refractive index higher than a refractive index of the insulation layer; and a low refractive index part having a refractive index higher than the refractive index of the insulation layer and lower than the refractive index of the high refractive index part, and the high refractive index part is located on each of the plurality of photoelectric conversion portions and the low refractive index part is located on the separating portion.

Photoelectric conversion apparatus and image pickup system

A solid-state image sensor includes a first pixel for detecting focus, a second pixel disposed adjacent to the first pixel, a third pixel disposed adjacent to the first pixel, and a first light reflecting member disposed between the first pixel and the third pixel. The first pixel includes a plurality of photoelectric conversion units. When a second light reflecting member is disposed between the first pixel and the second pixel, the width in a predetermined direction of the first light reflecting member is larger than the width in a predetermined direction of the second light reflecting member.

Solid-state image sensor

A first photoelectric conversion unit is arranged in one end portion of a pixel, and a second photoelectric conversion unit is arranged in the other end portion of the pixel. A third photoelectric conversion unit is arranged in a center portion of the pixel. A length of the third photoelectric conversion unit in a predetermined direction is shorter than a length of the first photoelectric conversion unit and the second photoelectric conversion unit.

An image device. While holding electric charges generated at a photoelectric conversion portion in a first period, a first charge holding portion holds electric charges generated at the photoelectric conversion portion in a second period which is a period that does not succeed the first period and which is different in length from the first period, and a second charge holding portion holds electric charges generated at the photoelectric conversion portion in a third period which is a period that does not overlap the first period and the second period.

Imaging device, imaging system, and moving object

An image pickup apparatus including a focus detection pixel configured to perform focus detection by a phase difference method, is provided. The focus detection pixel comprises a photoelectric conversion unit arranged in a substrate, a microlens arranged above the photoelectric conversion unit, and a light guide arranged between the photoelectric conversion unit and the microlens. A refracting power of the microlens on a first plane is smaller than a refracting power of the microlens on a second plane. The first plane passes through a top of the microlens, is perpendicular to an upper surface of the substrate, and is located along a direction in which the focus detection pixel performs the focus detection. The second plane passes through the top of the microlens, is perpendicular to the upper surface of the substrate, and intersects the first plane.

Image pickup apparatus and camera

Solid-state image sensor including pixels for detecting focus using a difference in intensity between lights

Growing community of inventors

Kawasaki, Japan

Taro Kato