National Institute of Advanced Industrial Science and Technology

Other

Sumitomo Chemical Company, Limited

The University of Tokyo

Agency of Industrial Science & Technology, Ministry of International Trade & Industry

Evolvable System Research Institute, Inc.

Taro Itatani

Masahiko Hata

Tetsuya Higuchi

Masahiro Murakawa

Yuji Kasai

Tomoyuki Takada

Sadanori Yamanaka

Hiroyuki Ishii

Shinichi Takagi

Noboru Fukuhara

Masafumi Yokoyama

Hisashi Yamada

Mitsuru Takenaka

Tetsuji Yasuda

Toshihiro Kamei

Hirokazu Nosato

Yuji Urabe

Noriyuki Miyata

Eiji Kume

Masao Shimada

Shuichi Yagi

Yoshiyuki Amano

There is provided a semiconductor wafer including a base wafer whose surface is entirely or partially a silicon crystal plane, an inhibitor positioned on the base wafer to inhibit crystal growth and having an opening that reaches the silicon crystal plane, a first crystal layer made of SiGe(0&#x2266;x&#x3c;1) and positioned on the silicon crystal plane that is exposed in the opening, a second crystal layer positioned on the first crystal layer and made of a III-V Group compound semiconductor that has a band gap width larger than a band gap width of the first crystal layer, and a pair of metal layers positioned on the inhibitor and the second crystal layer. The pair of the metal layers are each in contact with the first crystal layer and the second crystal layer.

Semiconductor wafer, semiconductor device, and method of producing semiconductor wafer

Provided is a semiconductor wafer including: a base wafer containing silicon; an inhibitor that has been formed on the base wafer, has an aperture in which a surface of the base wafer is exposed, and inhibits crystal growth; and a light-absorptive structure that has been formed inside the aperture in contact with a surface of the base wafer exposed inside the aperture, where the light-absorptive structure includes a first semiconductor and a second semiconductor.

Semiconductor wafer, photoelectric conversion device, method of producing semiconductor wafer, and method of producing photoelectric conversion device

A sensor includes: a base wafer containing silicon; a seed member provided directly or indirectly on the base wafer; and a photothermal absorber that is made of a Group 3-5 compound semiconductor lattice-matching or pseudo lattice-matching the seed member and being capable of generating a carrier upon absorbing light or heat, where the photothermal absorber outputs an electric signal in response to incident light to be introduced into the photothermal absorber or heat to be applied to the photothermal absorber. A semiconductor wafer includes: a base wafer containing silicon; a seed member provided directly or indirectly on the base wafer; and a photothermal absorber that is made of a Group 3-5 compound semiconductor lattice-matching or pseudo lattice-matching the seed member and being capable of generating a carrier upon absorbing light or heat.

Sensor, semiconductor wafer, and method of producing semiconductor wafer

Provided is a field-effect transistor including a gate insulating layer, a first semiconductor crystal layer in contact with the gate insulating layer, and a second semiconductor crystal layer lattice-matching or pseudo lattice-matching the first semiconductor crystal layer. Here, the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer are arranged in the order of the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer, the first semiconductor crystal layer is made of InGaAsP(0&#x3c;x1&#x2266;1, 0&#x2266;y1&#x2266;1), the second semiconductor crystal layer is made of InGaAsP(0&#x2266;x2&#x2266;1, 0&#x2266;y2&#x2266;1, y2&#x2260;y1), and the electron affinity Eof the first semiconductor crystal layer is lower than the electron affinity Eof the second semiconductor crystal layer.

Field-effect transistor, semiconductor wafer, method for producing field-effect transistor and method for producing semiconductor wafer

In the detection of fluorescence Lf emitted by a micro-object irradiated with an excitation light Le by a semiconductor light-detecting elementa converging microlensfor converging the excitation light Le elevating the optical density thereof and irradiating the micro-object with the light, causing the micro-object to generate fluorescence Lf due to two-photon absorption, is inserted partway along the light path of the excitation light Le. This enables the fluorescence Lf emitted by the micro-object to be detected with high sensitivity.

Device for detecting emission light of micro-object

An electric signal transmission line includes a signal electrode portion, a ground electrode portion and a dielectric portion formed on a semiconductor substrate. The signal electrode portion has a metal electrode through which an electric signals flows. The ground electrode portion has a grounded metal electrode. The metal electrode of the signal electrode portion and the metal electrode of the ground electrode portion are connected with a semiconductor PN junction. The dielectric portion is formed by using a dielectric to cover a region between the metal electrode of the signal electrode portion and the metal electrode of the ground electrode portion through which a line of electric force runs and is a region in which energy of transmitted electric signals exist.

Electric signal transmission line

An optical apparatus has an adjustment apparatusand an optical unitincluding a plurality of optical elements. The adjustment apparatus sequentially provides control signals that, according to a probabilistic search technique, change the parameters of a stipulated plurality of optical elements among the optical elements to become parameters that cause the functions of the optical apparatus to satisfy stipulated specifications. A method of adjusting the optical apparatus includes sequentially providing control signals that, according to a probabilistic search technique, change the parameters of the stipulated plurality of optical elements among the optical elements, and searching for optical values at which the functions of the optical apparatus the stipulated specification.

Optical apparatus, optical apparatus adjustment method, and storage medium recorded with a processing program that executes said adjustment method

A capacitance position sensor includes a pair of opposed tabular electrodes, an LC oscillator circuit having a toroidal core winding and whose oscillating frequency varies with change in capacitance between the pair of electrodes, and an arithmetic processing unit for calculating an absolute value of a distance between the electrodes from the oscillating frequency of the oscillator circuit. A position controller includes a stationary member formed with one electrode of the pair of electrodes of the position sensor, a movable member on which the other electrode of the pair of electrodes is formed, and moving device for moving the movable member relative to the stationary member.

Capacitance position sensor and position controller equipped with the sensor

An optical apparatus has an adjustment apparatus and an optical unit including a plurality of optical elements. The adjustment apparatus sequentially provides control signals that, according to a probabilistic search technique, change the parameters of a stipulated plurality of optical elements among the optical elements to become parameters that cause the functions of the optical apparatus to satisfy stipulated specifications. A method of adjusting the optical apparatus includes sequentially providing control signals that, according to a probabilistic search technique, change the parameters of the stipulated plurality of optical elements among the optical elements, and searching for optical values at which the functions of the optical apparatus the stipulated specification.

Growing community of inventors

Ibaraki, Japan

Taro Itatani