Industrial Technology Research Institute

Tarng-Shiang Hu

Jia-Chong Ho

Cheng-Chung Lee

Liang-Ying Huang

Yi-Kai Wang

Wei-Ling Lin

Tsung-Hsien Lin

Jing-Yi Yan

Yu-Yuan Shen

Cheng-Chung Hsieh

Wen-Kuei Huang

Hsiang-Yuan Cheng

Chi-Jen Kao

Yu-Rung Peng

Tsung-Hua Yang

Wen-Hsi Lee

Pang Lin

Ming-Chou Chen

Jiun-Jie Wang

Liang-Xiang Chen

Tzu-Wei Lee

Jen-Shyang Ni

Jiing-Fa Wen

An electronic device and a display panel thereof are provided. The electronic device includes a first display panel and a casing. The first display panel has a first displaying part and a second displaying part. The first display panel includes a first bending mechanism which is disposed between the first displaying part and the second displaying part to bend or spread the first display panel. The casing has a first surface and a second surface opposite to the first surface. The casing includes a rail mechanism which is disposed on the second surface. The second displaying part is slid on the rail mechanism to shift the first display panel relatively to the casing.

Electric device and display panel thereof

A method of fabricating an organic thin film transistor is provided. The method includes forming a source, a drain and a gate on a substrate and forming a dielectric layer to isolate the gate from the source and isolate the gate from the drain. An organic active material layer is formed on the substrate to fill a channel region between the source and the drain and cover the source and the drain. A barrier material layer is formed on the organic active material layer. Thereafter, the barrier material layer and the organic active material layer are patterned to form a barrier layer and an organic active layer and expose the source and the drain.

Organic thin film transistor and method of fabricating the same

A method for fabricating a device with a flexible substrate includes providing a rigid substrate at first. Next, an interfacing layer can be formed on the rigid substrate, and then a flexible substrate is directly formed on the interfacing layer. The flexible substrate fully contacts the interfacing layer. A device structure is then formed on the flexible substrate.

Method of fabricating a device with flexible substrate and method for stripping flexible-substrate

A method of TFT (Thin Film Transistor) manufacturing and a substrate structure are provided. The structure includes a substrate and a self-alignment mask. A self-alignment mask on a substrate is first manufactured and then the self-alignment mask may synchronously extend with the substrate during the thermal process. When an exposure light source is provided on the side without a TFT formed, the self-alignment mask can overcome the problem that when a plastic substrate extends, the positions of the source and drain to be formed on the plastic substrate are incorrect, which has a great effect on the accuracy of alignment. As the result, the positions of the source and drain can be defined accurately.

Substrate structure for a thin film transistor

A TFT and an OLED device are provided. The TFT includes a substrate, a gate, a gate insulator, a source/drain layer, an isolated layer, and a channel layer. The gate is disposed on the substrate. The gate insulator is disposed on the substrate and covers the gate. The source/drain layer is disposed on the gate insulator, and exposes a portion of the gate insulator above the gate. The isolated layer is disposed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. The channel layer is disposed in the opening of the isolated layer. Further, the channel layer is exposed by the opening and is electrically connected to the source/drain layer. On the other hand, the OLED device mainly includes a driving circuit and an organic electro-luminescent unit.

Thin film transistor and organic electro-luminescent display device

Electronic devices with hybrid high-k dielectric and fabrication methods thereof. The electronic device includes a substrate. A first electrode is disposed on the substrate. Hybrid high-k multi-layers comprising a first dielectric layer and a second dielectric layer are disposed on the substrate, wherein the first dielectric layer and the second dielectric layer are solvable and substantially without interface therebetween. A second electrode is formed on the hybrid multi-layers.

Electronic devices with hybrid high-k dielectric and fabrication methods thereof

A structure of a thin film transistor (TFT) is provided. A substrate has a first surface and a second surface opposite to each other, in which the first surface has a patterned mask layer. A patterned first electrode layer is disposed on the second surface of the substrate and has a gate portion and a capacitor electrode portion. A patterned second electrode layer is disposed on the second surface of the substrate and has a source and a drain, in which the patterned second electrode layer is self-aligned with the patterned first electrode layer by exposing the first surface of the substrate with the patterned mask layer as a mask. An insulating layer is disposed between the patterned first electrode layer and the patterned second electrode layer.

Structure of thin film transistor

A composition for forming a dielectric layer includes a liquid organometallic compound serving as a precursor with high dielectric constant, a photo-sensitive polymer or a non-photo-sensitive polymer and a solvent, wherein the liquid organometallic compound includes metal alkoxide, and the metal of the metal alkoxide includes Al Ti, Zr, Ta, Si, Ba, Ge and Hf. The dielectric layer formed by the composition includes the photo-sensitive polymer or the non-photo-sensitive polymer and an amorphous metal oxide formed therein.

Fabricating dielectric layer

A method for making a thin film transistor (TFT) is provided. A mask is first formed on the backside of a substrate, and is used to fabricate a gate, source, and drain of the transistor by backside exposure, such that the source and drain can be self-aligned with the gate pattern. In this way, an alignment shift due to expansion or contraction after performing a high temperature process on an insulating layer can be avoided. Further, since the backside mask previously formed on the substrate can be shifted with the expansion or contraction of the substrate, the process is simplified. Moreover, the source/drain can be accurately aligned with the gate, so that parasitic capacitance can be reduced and flickering of the panel can be avoided.

Method for making thin film transistor

A photosensing soluble organic semiconductor material is disclosed, which includes a Diels-Alder adduct which is a polycyclic aromatic compound with a dienophile. The polycyclic aromatic compound is pentacene. And the dienophile is represented by the formula of O&#x2550;S&#x2550;N&#x2014;R, wherein Ris SOR, SOR, SO, or SO; and wherein Ris selected from the group consisting of alkyl, alkoxy, acyl, aryl, aralkyl, chloroalkyl, fluoroalkyl, and substituted aryl with 1-12 carbon atoms. The structural formula of the adduct is as follows: 

Photosensing soluble organic semiconductor material

A method of fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulator is formed on the substrate to cover the gate. A source/drain layer is formed on the gate insulator, and a portion of the gate insulator above the gate is exposed by the source/drain layer. An isolated layer is formed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. A channel layer is formed in the opening of the isolated layer to be electrically connected to the source/drain layer, and the channel layer is exposed by the opening.

Method of fabricating thin film transistor and organic electro-luminescent display device

A method of fabricating a vertical thin film transistor (vertical TFT) is disclosed, wherein a shadow mask is used to fabricate the TFT device in vertical structure. First, a metal layer is formed, which serves as ribs and a gate layer. Next, a shadow mask is disposed on the gate layer. Afterwards, the shadow mask is used as a mask to form a source layer, an organic semiconductor layer and a drain layer. Thus, the process is simplified. Since no photolithography process is required, and therefore damage of the organic semiconductor layer is avoided and a vertical TFT with desired electrical characteristics may be obtained.

Method of fabricating vertical thin film transistor

A fabricating method of organic electronic device is provided. The method comprises: providing a flexible substrate; fabricating a plurality of organic elements on the flexible substrate; fabricating a patterned spacing layer on the flexible substrate; and arranging a cover substrate on the patterned spacing layer, and sealing the edges of the flexible substrate and the cover substrate with a sealant, wherein the patterned spacing layer is used to maintain a space between the flexible substrate and the cover substrate.

Method of fabricating organic electronic device

A method of high precision printing for manufacturing organic thin film transistor, comprising the following steps of: forming a gate on a substrate; forming an insulator layer on the substrate; forming a conducting wire electrode film on the insulator layer; forming a organic interlayer; forming a organic semiconductor layer on the organic interlayer; forming a polymer layer for channel length on the organic semiconductor layer; forming a organic electrode film; and forming a protective layer. Moreover, a means for forming layers of above mentioned method is a high precision printing selected from the consisting of Inkject Printing, Screen Printing, Blade Coating, Roller Coating, Nanoimprinting, Micro Contact Printing, Flexographic printing, Table coating and Spin Coating, etc.

Growing community of inventors

Hsinchu, Taiwan

Tarng-Shiang Hu