Innogrit Technologies Co., Ltd.

Delta Electronics (shanghai) Co., Ltd

Marvell International Limited

Chinese Academy of Sciences

Nio Nextev Limited

Zing Semiconductor Corporation

Shanghai Universoon Autotech Co., Ltd.

Tao Wei

Kai Dong

Bing Fan

Ke Wei

Liangsong Che

Yucai Zhao

Junlai Huang

Zhengtian Feng

Jie Chen

Wei Jiang

Kris Tomasson

Yun Liu

Lin Chen

Yan Chen

Gang Zhao

Zhen Zhang

Chao Yang

Zhongying Xue

Xing Wei

Jing Gao

Yong Xi

Hao Zhu

Moyang Chen

Minghao Li

Zhiling Zhao

Zheng Xi

Xu He

Jacky Feng

Patrick Niall McGoldrick

Rujie Zhu

Yi Zheng

Zhan Li

Changcheng Yang

Andrea Carlon

Stephen White

Younes Badi

Robert James Orriv

Zhiyang Lv

Chunling Zeng

This application provides a method for instruction transmission for memory devices and a storage system. The method includes: screening instruction flow in a controller to be sent to memory devices by using a command match template and an address match template; grouping these instructions without address into a first instruction pool and these instructions with address into a second instruction pool; address screening for the second instruction pool to determine whether there are instructions that can be broadcast in a merged manner in the second instruction pool; when it is determined that the state of the memory device meets requirement and there are instructions that can be broadcast in a merged manner in the first instruction pool and/or the second instruction pool, simultaneously parallel-transmitting the instructions to corresponding memory devices. The application can save address/command time consumption and release more bandwidth for data transmission.

Method for instruction transmission for memory devices and storage system

Dual input power supply

The present disclosure relates to a data writing method and apparatus of a NAND flash, and a storage medium. The method includes: for each channel in the NAND flash, pairing all logic units, namely LUNs, in the channel so that each LUN pair includes at least two LUNs; and for each LUN pair, sequentially writing data to one same page in a plurality of pages corresponding to a program mode included in each word line of each LUN in the LUN pair, and after completing data writing to the same page of the word line of all the LUNs in the LUN pair, sequentially writing data to a next same page in the plurality of pages of the word line of each LUN in the LUN pair, until the data writing is sequentially performed on a last same page in the plurality of pages of the word line of each LUN in the LUN pair. Therefore, the transmission efficiency of a NAND bus can be improved, and the data writing performance of the NAND flash can be improved.

Data writing method and apparatus, and storage medium

Systems, apparatus and methods are provided for temperature assisted non-volatile storage device management in a non-volatile storage system. In one embodiment, a non-volatile storage system may comprise a temperature sensor, a non-volatile storage device and a processor. The processor may be configured to obtain a read-out from the temperature sensor, generate a predicted real-time on-die temperature for the non-volatile storage device based on the read-out, generate an estimated threshold voltage for reading data stored in the non-volatile storage device based on the predicted real-time on-die temperature and conduct a local sweep of a reference voltage using the estimated threshold voltage as a starting point to obtain a final read reference voltage with a minimum read bit error rate.

Temperature assisted NAND flash management

An engine valve actuating apparatus includes a housing that contains an activation piston bore and an actuation piston bore. The activation piston is disposed in the activation piston bore and configured to actuate an engine valve. The actuation piston includes at least one side surface that is in sliding contact with the inner surface of the actuation piston bore so that the actuation piston can slide within the actuation piston bore. The actuation piston also has a guide mechanism, which guides the first and second links to move in a plane between the first position and the second position. At least a part of the guide mechanism is below at least a part of the at least one side surface of the actuation piston.

Engine valve actuating apparatus

A reading method for solid-state disk returns data and/or information depending on state information. A data unit stored in the solid-state disk comprises metadata and a plurality of sectors including at least two sectors of user data, the metadata comprising a sector state set indicating state information of each of the sectors in the data unit, and the state information comprising a valid state and an invalid state. In response to receiving a read command from a host to read at least one of the sectors in the data unit, the solid-state disk returns actual data to the host for one or more of the sectors in the valid state, and returns information indicating a read error to the host for one or more of the sectors in the invalid state, according to the sector state set stored in the metadata of the data unit.

Solid-state disk and reading and writing method thereof

Disclosed a heat shield structure for a single crystal production furnace, which is provided above a melt crucible of a single crystal production furnace and comprises an outer housing and a heat insulation plate disposed within the outer housing. A bottom outer surface of the outer housing faces an interior of the melt crucible, and an angle formed between a plane in which the heat insulation plate is located and a plane in which a bottom of the outer housing is located is an acute angle and faces an outer surface of single crystal silicon. The heat shield design is changed, a heat absorbing plate is additionally provided for transferring heat absorbed to the single crystal silicon, a heat channel is formed in the heat shield, so that a pulling rate is controlled, which improves radial mass uniformity of the single crystal silicon.

Heat shield structure for single crystal production furnace and single crystal production furnace

A method and apparatus for determining a reference voltage id disclosed. The method may include: reading data from a first flash memory page by using different reference voltages, and taking, as a first target reference voltage, one of the different reference voltages at which the first number of erroneous bits of the data that is read reaches a converegence value. The first flash memory page is any one of multiple flash memory pages of a flash memory block to be tested. The method may include adjusting the first target reference voltage to obtain second target reference voltages; and reading data from the flash memory pages by using the second target referece voltages, and taking, as a target reference voltage, one of the second target reference voltages at which the second number of erroneous bits of the data that is read is the smallest.

Method of determining read reference voltage for blocks based on number of erroneous bits

Charging vehicle

System and methods are provided for data storage management in a memory device. A first logical block corresponding to a plurality of first physical blocks of a memory device is selected. A source physical block within the first physical blocks is determined, the source physical block including less valid data than one or more second physical blocks within the first physical blocks. A target physical block of the memory device is obtained. The valid data in the source physical block is copied to the target physical block. The source physical block is released for storing new data.

Systems and methods for data storage management

Growing community of inventors

Shanghai, China

Tao Wei