Shanghai Huahong Grace Semiconductor Manufacturing Corporation

Huawei Technologies Co., Limited

Chinese Academy of Sciences

Jiangsu Hengrui Medicine Company Ltd.

Other

Texas Instruments Corporation

Lsi Corporation

Agere Systems Inc.

Avago Technologies General IP (singapore) Pte. Ltd.

Shanghai Jiaotong University

Spreadtrum Communications (shanghai) Co., Ltd.

Shanghai Hengrui Pharmaceutical Co., Ltd.

Shanghai Hua Hong Nec Electronics Company, Limited

Shanghai Vanchip Technologies Co., Ltd.

Siemens Aktiengesellschaft

Tao Wang

Jia Pan

Longjie Zhao

Jiye Yang

Zhen Wang

Fan Chen

Yi Lu

Kai Xue

Xiongbin Chen

Junjun Xing

Yifan Lin

Lin Sun

Weijun Zhang

Lixing You

Wei Zhang

Jin Liu

Ke Zhang

Yi Zhang

Lei Li

Dong Qian

Si Ruo Chen

Ying Lin Cai

Yang Liu

Long Wang

Nan Li

Shun Jie Fan

Xukun Zhang

Xun Liu

Runxiao Zhang

Yali Wang

Xiaopeng Li

Xiliang Zhang

Shengxiang Guo

Weihua Sun

Jianjun Zhou

Yunfang Bai

Ze Mian Huang

Tingting Wu

Zhiwei Shang

Huan Yue

Xuan Huang

Chong Chen

Naier Meng

Yixin Wu

Thomas R Neu

Puke Zhou

Xiaohua Tian

Haihua Tao

Yanzhi Yu

Ziquan Zhou

Yixuan Wu

Xinyu Tong

Chaolin Lv

Shubin Su

Xiaoxiang Sun

Haoqi Hu

Deyong Sun

Xiaoyan Yang

Haizhao Wang

Deyu Liu

Guangfu Si

Hongwei Wang

Xianfeng Chen

Liang Zhao

Keran Xue

Keran Zhou

Feifei Wang

Yongcheng Wang

Xiang Zeng

Shuqun Cheng

Yulu Dai

Jian Guo Pang

Er Ping Meng

An audio data transmission method and apparatus for a wireless earphone, and a storage medium and a terminal are provided. A play mode adopted by the wireless earphone includes a first play mode and a second play mode, and the method includes: determining whether the first play mode currently adopted by the wireless earphone satisfies a transmission bandwidth required by to-be-played audio data at least based on parameter information of the to-be-played audio data; and based on the first play mode not satisfying the transmission bandwidth required by the to-be-played audio data, transmitting the to-be-played audio data through a connection channel corresponding to the second play mode.

Audio data transmission method and apparatus for wireless earphone, and storage medium and terminal

A device location sensing method obtains locations of N devices in a wireless network based on channel state information (CSI). Each device in the wireless network has M antennas arranged in a non-linear manner. To determine the device locations, CSI data mutually detected between every two devices in N devices is obtained and used to calculate an angle difference of arrival (ADoA) set which includes, for every two devices in the N devices relative to each of the other devices in the N devices, an ADoA that is a difference between angles of arrival (AoAs) of the two devices relative to the other device. Relative locations of the N devices are then calculated based on the ADoA set.

Location sensing method and apparatus, and positioning method and apparatus

A method for making a super junction device includes the following steps: step 1: forming a trench gate, in the forming process of the trench gate, a polysilicon gate being used to fill gate trenches and then first flattening being performed and the width of the gate trench at the leading-out position of the gate structure satisfies the requirement of forming contacts; and step 2: forming a super junction, in the forming process of the super junction, a second epitaxial layer being used to fill a super junction trench and then second flattening being performed. The method can realize an all flat process, can conveniently arrange the trench gate process before the forming process of the super junction, can decrease the thermal processes after the formation of the super junction, can save the mask and can decrease the process cost.

Method for making super junction device

The present disclosure provides a method and system for improving a counting rate of a superconducting nanowire single photon detector. The method includes: coupling an electrical attenuator in series with an output end of the superconducting nanowire single photon detector; the electrical attenuator includes an input end and an output end, and the input end of the electrical attenuator is coupled with the output end of the superconducting nanowire single photon detector. The present disclosure couples the electrical attenuator in series with the output end of the superconducting nanowire single photon detector. Since the configuration of the electrical attenuator is a resistor network, it can act as a series resistor and can also reduce the response pulse amplitude of the superconducting nanowire single photon detector. The present disclosure can improve the counting rate of the superconducting nanowire single photon detector, while keeping the detection efficiency high.

Method and system for improving counting rate of superconducting nanowire single photon detector

The present disclosure discloses a trench gate semiconductor device, wherein a trench gate includes a trench formed in a semiconductor substrate, and a gate oxide layer formed on a bottom surface and a side surface of the trench; the gate oxide layer is formed by stacking a first oxide layer and a second oxide layer; the first oxide layer is a furnace tube thermal oxide layer; the second oxide layer is a PECVD oxide layer; the gate oxide layer has a thermally densified structure processed by means of RTA. The present disclosure also discloses a method for manufacturing a trench gate semiconductor device. The present disclosure can increase BVGSS of the device, without affecting the threshold voltage of the device, with simple processes and low costs.

Trench gate semiconductor device and method for making the same

The present disclosure relates to a pharmaceutical composition, which comprises an IL-15 protein complex and a citrate buffer solution. In addition, the pharmaceutical composition may also comprise a sugar and a non-ionic surfactant. The pharmaceutical composition in the present disclosure demonstrates a high degree of stability even after being stored at 2-8&#xb0; C. for several months.

IL-15 protein complex pharmaceutical composition

An IGBT device comprises a super-junction structure arranged in a drift region and formed by a plurality of N-type pillars and a plurality of P-type pillars which are alternately arrayed. Device cell structures of the IGBT device are formed in an N-type epitaxial layer at the tops of super-junction cells. Each device cell structure comprises a body region, a gate structure and an emitter region. N-type isolation layers having a doping concentration greater than that of the N-type epitaxial layer are formed between the bottom surfaces of the body regions and the top surfaces of the P-type pillars and are used for isolating the body regions from the P-type pillars. The super-junction structure and the N-type isolation layers can increase the current density of the device, decrease the on-state voltage drop of the device and reduce the turn-off loss of the device.

IGBT device

A super-junction IGBT device comprises a plurality of N-type pillars and a plurality of P-type pillars which are alternately arrayed in a horizontal direction. Device cell structures are formed at tops of super-junction cells and each comprise a trench gate having a gate trench striding across an interface of the corresponding P-type pillar and the corresponding N-type pillar. A body region is formed at a top of the corresponding N-type pillar, and a source region is formed on a surface of the body region. The top of each N-type pillar is provided with one body region and two trench gates located on two sides of the body region, and each body region is isolated from the P-type pillars on the two sides of the body region through the corresponding trench gates. The invention further discloses a method for manufacturing a super-junction IGBT device. Self-isolation of the P-type pillars is realized, the on-state current capacity of the device is improved, and the on-state voltage drop of the device is reduced.

Super-junction IGBT device and method for manufacturing same

Disclosed in the present invention are a multimode and multi-frequency radio frequency front end module, a chip, and a communication terminal. The radio frequency front end module comprises an input matching unit, an amplification unit, a first output matching module, a first switch module, a second matching module, and a control unit. The control unit is connected to the first switch module and is used for controlling a switch state of the first switch module, so as to input a radio frequency signal to one or more radio frequency transmission paths. According to the present invention, radio frequency transmission paths matching the radio frequency front end module can be selected according to different frequency bands under different modes and the control unit controls corresponding switches to be in switch-off and switch-on states, thereby implementing output of radio frequency signals at the different frequency bands under the different modes

Multimode and multi-frequency radio frequency front end module, chip, and communication terminal

Provided is an acylated derivative of human insulin or an analogue thereof. Specifically disclosed is an acylated derivative of a human insulin analogue, or zinc complex thereof; the human insulin analogue being derivatized is preferably Des(B30) human insulin; the acylated derivative is longer-lasting than existing insulin analogues and acylated derivatives thereof, its blood glucose reduction is more steady, and it is more stable in storage.

Acylated derivative of human insulin or analogue thereof

There is provided a method for implementing and regulating patterning of a graphene film by ultraviolet photo-oxidation, including: implementing patterning of a graphene film micron structure pattern by using a xenon lamp excimer ultraviolet photo-oxidation vacuum apparatus and a hard mask; 2: controlling oxygen excitons, by applying a non-uniform magnetic field on the surface of the graphene film in a vertical direction, to move toward the graphene film in a direction of a magnetic field, so as to enhance the directivity of etching to the graphene film in the vertical direction, thereby improving patterning quality of the graphene film with micron-structure; and (3) by adjusting the intensity and direction of the magnetic field moving direction of the oxygen excitons is controlled, and the shape of the etched pattern structure of the graphene film is controlled, and thus controlling the patterning of the graphene film may be achieved.

Method for implementing and regulating patterning of a graphene film by ultraviolet photo-oxidation

A trench gate manufacturing method includes the following steps: Step 1, forming a trench in the surface of a semiconductor substrate; Step 2, forming a first oxide layer; Step 3, selecting a coating according to the depth-to-width ratio of the trench and forming the coating completely filling the trench; Step 4, etching back the coating through a dry etching process; Step 5, conducting wet etching on the first oxide layer with the coating reserved at the bottom of the trench as a mask so as to form a gate bottom oxide; Step 6, removing the coating; and Step 7, growing a gate oxide. By adoption of the trench gate manufacturing method, a BTO can be realized at a low cost, and can be well-formed in trenches with smaller depth-to-width ratios and thus is suitable for forming BTOs in trenches with various depth-to-width ratios, thereby having a wider application range.

Trench gate manufacturing method

A sliced assembly type container, manufacturing, stacking and transportation methods, and finished modules. The sliced assembly type container meets requirements of the ISO on a universal cargo container. The sliced assembly type container comprises a bottom finished module (), two side finished modules (), two door finished modules (), a top finished module (), and a front finished module (). Adjacent modules are fixed by using a connection structure, and/or fixing glue, and/or welding, and/or another manner.

Sliced assembly type container and method for manufacturing the same

A method and a device for reducing the extrinsic dark count of a superconducting nanowire single photon detector (SNSPD), it comprises the steps of: integrating a multi-layer film filter on the superconducting nanowire single photon detector; the multi-layer film filter is a device implemented by a multi-layer dielectric film and having a band-pass filtering function. The extrinsic dark count is the dark count triggered by optical fiber blackbody radiance and external stray light. The superconducting nanowire single photon detector comprises: a substrate having an upper surface integrated with an upper anti-reflection layer and a lower surface integrated with a lower anti-reflection layer; an optical cavity structure; a superconducting nanowire; and a reflector. The present invention is easy to operate, and only needs to integrate the multi-layer film filter on the substrate of the SNSPD to filter non-signal radiation.

Method and device for reducing extrinsic dark count of nanowire single photon detector comprising a multi-layer film filter

A circuit includes a digital converter configured to convert an input signal to an output signal. The digital converter is configured to provide the output signal with at least one of a plurality of different output resolutions during each frame based on a control input. A resolution controller is configured to provide the control input to set the resolution of the digital converter to include at least two of the plurality of different output resolutions during each respective frame, such that an aggregate resolution for the digital converter is maintained below a predetermined threshold over time. The aggregate resolution is based on a ratio of the different output resolutions during each respective frame.

Dynamic resolution adjustment for digital converters

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Shanghai, China

Tao Wang