Yangtze Memory Technologies Co., Ltd.

Huazhong University of Science and Technology

Huawei Technologies Co., Limited

Wuhan China Star Optoelectronics Technology Co., Ltd.

Wuhan University

Wuhan Yzy Biopharma Co., Ltd.

State Grid Jiangsu Electric Power Company

State Grid Hubei Electric Power Research Institute

Yangze Optical Fibre and Cable Company Ltd.

Tao Wang

Jun Chen

Jifeng Zhu

Si Ping Hu

Zi Qun Hua

Jia Wen Wang

Shi Qi Huang

Yang Liu

Pengfei Zhou

Cai-Hua Xiong

Lijuan Fang

Liu Hu

Wen-Bin Chen

Yuhao Li

Tian-Cheng Zhou

Jie Jun Yi Liang

Di Hu

Jian Xu

Ning Liu

Yigang He

Yu Zhang

Liulu He

Chun Yen Liu

Hui Zhang

Ding Zhong

Peng Wang

Xilin Wang

Kun Yang

Yang Xu

Bing Li

Kaipei Liu

Chong Tong

Yongling Lu

Jianhua Sun

Siyang Liao

Sooyoung Woo

Wei Ma

Guanqun Sun

Mi Huang

Defu Cai

Xiaohui Li

Zuowei Wang

Xiao Xing

Li Wan

Kunpeng Zhou

Rusi Chen

Erxi Wang

Liangyi Zhang

Wenna Wang

Haiguang Liu

Jiahuan Feng

Yi Gao

Qi Pan

Dongsheng Jing

Weiliang Wang

Min Xiang

Dan Wang

Junlin Su

Wenyu Yang

Kun Huang

Kesuo Fan

Shuo Qiu

Guangdong Cheng

Jinwen Mai

Yi Hong

Zhihao Fang

Zhijian Wu

Dongquan Fang

A clutch adapted for an exoskeleton includes lower and upper base plates, a roller, a roller ratchet ring, a trigger, a pawl, a pawl spring, a trigger torsional spring, a trigger positioning shaft, and a pawl positioning shaft. Two ends of the trigger positioning shaft are respectively connected to the upper and lower base plates. The trigger and the trigger torsional spring are sleeved on the trigger positioning shaft. Two ends of the trigger torsional spring are respectively connected to the lower base plate and the trigger. Two ends of the pawl positioning shaft are connected to the lower and upper base plates. The pawl spring and the pawl are respectively sleeved on the pawl positioning shaft. Two ends of the roller are rotatably connected to the lower and upper base plates. The pawl is detachably connected to the roller ratchet ring. The trigger is movably connected to the pawl.

Clutch adapted for exoskeleton and ankle joint assisted exoskeleton

A passive exoskeleton based on energy flow characteristics of a foot-ankle complex includes a first passive exoskeleton. The first passive exoskeleton includes an energy distribution mechanism, a strike-recipient mechanism and a wearing fixing assembly. The energy distribution mechanism is connected to the strike-recipient mechanism, and the energy distribution mechanism is also connected to the wearing fixing assembly. The energy distribution mechanism includes a ratchet wheel shaft, a left torsional spring, a right torsional spring and a middle guide wheel respectively sleeved on the ratchet wheel shaft. The middle guide wheel is connected to the wearing fixing assembly through an ankle joint power-assisted cord. The ratchet wheel shaft is connected to the strike-recipient mechanism, the strike-recipient mechanism drives the ratchet wheel shaft to rotate, and the ratchet wheel shaft drives the left torsional spring, the right torsional spring and the middle guide wheel to rotate.

Passive exoskeleton based on energy flow characteristics of foot-ankle complex

Disclosed is an optimal power flow-based hierarchical control method for a distributed energy storage system (ESS), where the method divides control of an energy storage cluster into three layers, performs primary and secondary control to realize intra-cluster control, and performs tertiary control to realize inter-cluster control. In the primary control, droop coefficients are set to realize intra-cluster basic power distribution. In the secondary control, a frequency/voltage shift and uneven power distribution that are caused by a droop are compensated for based on a consistency algorithm. In the tertiary control, a central controller is set, a solution of an optimal power flow is calculated and delivered to each cluster as a control signal, and the control signal is tracked in real time through the secondary control and the primary control. The method adjusts a reference voltage of each energy storage cluster without requiring a common bus.

Optimal power flow-based hierarchical control method for distributed energy storage system (ESS)

The present invention belongs to the field of processing residual stress, and discloses a method for calculating processing parameters for residual stress control by parameter inversion. This method comprises: (a) extracting a characteristic index reflecting the residual stress distribution characteristic from a residual stress distribution curve; (b) respectively presetting initial values of processing parameters for residual stress control, calculating an initial value of the characteristic index, and drawing curves of the characteristic index over the respective processing parameters to obtain respective fitted curves; (c) respectively establishing a relation formula between respective characteristic index increment of the processing parameters and the fitting curve; and (d) assigning the values and performing inversion calculation to obtain the required processing parameters. The present invention is simple in operation, reduces the number of tests, lowers the production cost, improves the processing residual stress distribution of the workpiece and improves the anti-fatigue life of the components.

Method for calculating processing parameters for residual stress control by parameter inversion

Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a method for forming a semiconductor device is disclosed. A first interconnect layer including first interconnects is formed above a first substrate. A first bonding layer including first bonding contacts is formed above the first interconnect layer, such that each first interconnect is in contact with a respective first bonding contact. A second interconnect layer including second interconnects is formed above a second substrate. A second bonding layer including second bonding contacts is formed above the second interconnect layer, such that at least one second bonding contact is in contact with a respective second interconnect, and at least another second bonding contact is separated from the second interconnects. The first and second substrates are bonded in a face-to-face manner, such that each first bonding contact is in contact with one second bonding contact at a bonding interface.

Hybrid bonding using dummy bonding contacts

A lightning strike probability-based coordinated power control method for an energy storage system and a load adjusts output power of an energy storage system and a regulatable load based on a real-time predicted lightning strike probability. This reduces a correlation between a power grid in a lightning region and an external power grid, minimizes impact of a lightning strike if any on the external power grid, and decreases an economic loss due to the lightning strike in the lightning region. The present disclosure establishes a relationship between the output power of the energy storage system, the regulated power of the regulatable load, and a lightning strike probability in a same region, and then regulates the power of the energy storage system and the regulatable load in real time based on the lightning strike probability.

Lightning strike probability-based coordinated power control method for energy storage system and load

Laser rangefinder

This application provides a fingerprint collection apparatus. According to the fingerprint collection method and the related apparatus that are provided in this application, a sensor array is divided into a plurality of areas in terms of a column based on a quantity of input ports of an analog front end component and a quantity of columns of the sensor array, and sensor units in different areas multiplex input channels of the analog front end component by using switches. In this way, when scanning row scanning lines in the sensor array, a row scanning circuit may control the switches to output, to the analog front end component in a time division manner, original fingerprint data collected by the sensor units in the different areas, so that fewer input channels of the analog front end component can be required, and a size of a fingerprint collection apparatus can be reduced.

Fingerprint collection apparatus and fingerprint collection method

Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first and a second semiconductor structures. The first semiconductor structure includes a first interconnect layer including first interconnects. At least one first interconnect is a first dummy interconnect. The first semiconductor structure further includes a first bonding layer including first bonding contacts. Each first interconnect is in contact with a respective first bonding contact. The second semiconductor structure includes a second interconnect layer including second interconnects. At least one second interconnect is a second dummy interconnect. The second semiconductor structure further includes a second bonding layer including second bonding contacts. Each second interconnect is in contact with a respective second bonding contact. The semiconductor device further includes a bonding interface between the first and second bonding layers. Each first bonding contact is in contact with a respective second bonding contact at the bonding interface.

Hybrid bonding using dummy bonding contacts and dummy interconnects

Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first and a second semiconductor structures. The first semiconductor structure includes a first interconnect layer including first interconnects. The first semiconductor structure further includes a first bonding layer including first bonding contacts. Each first interconnect is in contact with a respective first bonding contact. The second semiconductor structure includes a second interconnect layer including second interconnects. The second semiconductor structure further includes a second bonding layer including second bonding contacts. At least one second bonding contact is in contact with a respective second interconnect. At least another second bonding contact is separated from the second interconnects. The semiconductor device further includes a bonding interface between the first and second bonding layers. Each first bonding contact is in contact with one of the second bonding contacts at the bonding interface.

An optical reflective multiplexer chip, a laser transmitter chip, and an optical transmitter are disclosed. The optical transmitter includes the laser transmitter chip, an optical fiber, and the optical reflective multiplexer chip. The laser transmitter chip includes a bi-directional light emitting laser, a polarization splitter-rotator, and a first external port. The optical reflective multiplexer chip includes a combiner, a second external port, N third external ports, N microring resonant cavities, N polarization splitter-rotators, N first branch waveguides, and N second branch waveguides. The combiner is connected to the first branch waveguide, the second branch waveguide, and the second external port. The first external port is connected to the third external port by using the optical fiber.

Optical reflective multiplexer chip, laser transmitter chip, and optical transmitter

A transformer winding fault diagnosis method based on wireless identification sensing includes the following steps: collecting transformer winding vibration signals in a normal state and when a fault occurs; denoising the transformer winding vibration signals by using singular entropy, and randomly dividing the denoised transformer winding vibration signals in the normal state into two groups, where one group is training data, and the other group is original measurement data; using the denoised transformer winding vibration signals obtained when the fault occurs as original threshold data; reconstructing the original threshold data to obtain reconstructed threshold data, and obtaining a transformer winding residual error threshold when the fault occurs; and reconstructing the original measurement data to obtain reconstructed measurement data, obtaining corresponding residual error data, and comparing the residual error data with the residual error threshold, to implement fault diagnosis on the transformer winding. The present invention implements remote, wireless, and unmanned fault diagnosis on a transformer winding. The diagnosis efficiency is high, the workload of a maintenance person is reduced, and the running efficiency of a transformer is increased.

Transformer winding fault diagnosis method based on wireless identification sensing

Provided are compositions comprising a MSBODY and a cytotoxic immune cell (e.g., Cytokine-induced killer cell) to form Armed Activated CIK cells (ACCs), wherein the MSBODY comprising a first antigen binding moiety that has specificity for a tumor antigen, and a second antigen binding moiety that binds to the cell. Provided are also methods preparing a composition comprising a MSBODY and a cytotoxic immune cell, and methods for treating patients with CIK cells armed with bispecific antibodies.

Bispecific antibody-mediated cancer therapy with cytokine-induced killer cell

A low temperature polysilicon (LTPS) thin film transistor (TFT) substrate and a method for manufacturing the same are provided. The method includes: sequentially forming a plurality of light-shielding portions, a buffer layer, and a plurality of island-shaped polysilicon portions on a substrate; performing light ion doping over two sides of the island-shaped polysilicon portions to form doped regions and channel regions; sequentially forming a gate insulating layer and a plurality of gate electrodes; performing heavy ion doping over the doped region that are not covered by the gate electrodes to form N-type heavily doped regions and N-type lightly doped regions; and forming an interlayer insulating layer as well as a source electrode and a drain electrode which are electrically connected to the N-type heavily doped regions on the gate electrodes.

LTPS TFT substrate and method for manufacturing the same

Growing community of inventors

Hubei, China

Tao Wang