Micron Technology Incorporated

Nvidia Corporation

Midea Group Co., Ltd.

Sap Se

Micro Technology, Inc.

Tao Liu

Ting Luo

Mansour Keramat

Mehrdad Heshami

Edward Wai Yeung Liu

Timothy C Kuo

Xiangang Luo

Haisong Gu

Chun Sum Yeung

Jun Zhu

Jianmin Huang

Christopher Joseph Bueb

Dongyan Wang

Vishal Inder Sikka

Janaki P Kumar

Sanjay Rajagopalan

Cheng Cheng Ang

Bingjun Zhou

Eric Yuen

Xiao Wang

Philipp Maximilian Wesel

Zhengang Chen

Tezaswi Raja

Walter Di Francesco

Giuseppe D'Eliseo

Umberto Siciliani

Antonino Pollio

Dionisio Minopoli

Giuseppe Ferrari

Guang Hu

Luigi Esposito

Divya Ramakrishnan

Anna Chiara Siviero

Anna Scalesse

Liang Diao

Ben Faulkner

Allison Jayne Olson

Xiaoqi Ouyang

Jawid Aziz

Albert Harjono

Feng Bao

Douglas J Hogberg

Bo Liang

Veeramani V

Ayon Dey

Javid Aziz

Methods, systems, and devices for setting switching for single-level cells (SLCs) are described. A memory system may receive an access command from a host. The access command may correspond to an SLC block or to a multiple-level cell block. If the access command corresponds to an SLC block, the memory system may modify the access command to include one or more bits indicating a setting to use for performing the access operation corresponding to the access command. The setting may define one or more operating parameters for performing the access operation. The memory system may use bits to indicate the setting that are used to indicate a page address for multiple-level cell blocks. The memory system may issue the access command to a memory device, which may perform the access operation using the setting indicated in the one or more bits included by the memory system.

Setting switching for single-level cells

A method includes determining a first memory access count threshold for a first word line of a block of memory cells and determining a second memory access count threshold for a second word line of the block of memory cells. The second memory access count threshold can be greater than the first memory access count threshold. The method can further include incrementing a memory block access count corresponding to the block of memory cells that includes the first word line and the second word line in response to receiving a memory access command and refreshing the first word line when the memory block access count corresponding to the block of memory cells is equal to the first memory access count threshold.

Memory sub-system refresh

Methods, systems, and devices for a corrective read of a memory device with reduced latency are described. A memory system may identify a read error based on accessing a memory device, and may select a trim setting for a performing a corrective read operation based on a data retention condition associated with the accessed memory device. Such a data retention condition may be associated with a data retention duration, or a cross-temperature condition, among other criteria or combinations thereof. In some implementations, the memory system may select from a subset of possible trim settings, which may be associated with relevant process corners. For example, the memory system may select between a first trim setting that is associated with a relatively large cross-temperature and a relatively short data retention duration and a second trim setting that is associated with a relatively small cross-temperature and a relatively long data retention duration.

Corrective read of a memory device with reduced latency

A method includes detecting a power-up event associated with a memory sub-system comprising a plurality of blocks of memory cells having blocks of memory cells associated therewith, responsive to detecting the power-up event and prior to receipt of signaling indicative of a host initiation sequence, determining that a block of memory cells associated with a respective block among the plurality of blocks of memory cells is an open virtual block of memory cells, determining that the respective block associated with the open virtual block of memory cells exhibits greater than a threshold health characteristic value, and selectively performing a media management operation of a respective block of memory cells associated with the open virtual block of memory cells in response to the determination that the respective block exhibits greater than the threshold health characteristic value.

Media management on power-up

A replacement block pool for a memory device is established. The replacement block pool comprises one or more valid blocks from a set of valid blocks in the memory device determined based on a constraint defining a minimum number of valid blocks for the memory device. A grown bad block is detected in the memory device. The grown bad block is replaced with a replacement block from the replacement block pool in response to detecting the grown bad block.

Grown bad block management in a memory sub-system

A method includes monitoring a temperature of a memory component of a memory sub-system to determine that the temperature of the memory component corresponds to a first monitored temperature value; writing data to the memory component of the memory sub-system while the temperature of the memory component corresponds to the first monitored temperature value; determining that the first monitored temperature value exceeds a threshold temperature range; monitoring the temperature of the memory component of the memory sub-system to determine that the temperature of the memory component corresponds to a second monitored temperature value that is within the threshold temperature range; and rewriting the data to the memory component of the memory sub-system while the temperature of the memory component corresponds to the second monitored temperature value.

Memory sub-system temperature control

A method includes performing a first read operation involving a set of memory cells using a first voltage, determining a quantity of bits associated with the set of memory cells based on the first read operation, performing a second read operation involving the set of memory cells using a second voltage that is greater than the first voltage when the quantity of bits is above a threshold quantity of bits for the set of memory cells, and performing the second read operation involving the set of memory cells using a third voltage that is less than the first voltage when the quantity of bits is below the threshold quantity of bits for the set of memory cells.

Voltage threshold prediction-based memory management

A method of performing automated object inspection includes obtaining a plurality of test images. For each of the plurality of test images, the method includes performing independent object inspection on each of two or more sub-portions of the test image. The method further includes segmenting the test image into at least a first sub-portion of the test image and a second sub-portion of the test image; performing object inspection on the first sub-portion of the test image using a first subset of information channels of the test image and a first model trained on a first set of training images containing the first component; and performing object inspection on the second sub-portion of the test image using a second subset of information channels of the test image, and a second model trained on a second set of training images containing the second component.

Methods and systems for improved quality inspection

Aspects of the present invention are directed to techniques for improving the efficiency of power supply schemes by continuously and adaptively scaling voltage and frequency levels in an integrated circuit based on measured conditions in real-time, without resorting to a reliance on excessive pre-computed margins typical of conventional schemes. Embodiments of the present invention employ a self-tuning dynamic voltage control oscillator (or other similar clock signal generator) that sets the frequency for components in the integrated circuit. When a requested frequency exceeds a maximum allowed frequency for a given voltage level (accounting for other age and temperature related conditions), a look-up table is dynamically referenced to determine a new voltage level that is sufficient to safely and efficiently generate the requested frequency. The look-up table continuously receives updates on the operating conditions, and new voltage requests can be generated dynamically as necessary based on the system's current needs.

Adaptive voltage frequency scaling for optimal power efficiency

A method of quality inspection is performed by a robotic arm that includes a plurality of segments, a camera at an end of the robotic arm, and a plurality of joints connecting two segments of the plurality of segments. The method includes (i) inspecting, via the camera, a surface of a product with the camera positioned at a first position, (ii) based on the inspecting, identifying: (a) an area of interest on the surface of the product, and (b) a relative location of the area of interest on the surface, (iii) positioning, based on the relative location of the area of interest on the surface, the camera at a second position, and (iv) inspecting, via the camera, the area of interest on the surface of the product with the camera positioned at the second position. Inspecting the area of interest includes inspecting a subset of the surface of the product.

Methods, devices, and systems for improved quality inspection of products

A method of improved quality inspection includes (i) receiving a first command to capture a first image of a surface of a product, (ii) positioning, by actuating a plurality of rotatable joints, a camera at a first position that is substantially adjacent to the surface of the product, and capturing the first image of the surface of the product. The method further includes, after capturing the first image: (i) processing the first image to identify a defect in the first image and a relative location of the defect in the first image, and (ii) determining a second position of the camera in accordance with the first position of the camera and the relative location of the defect in the first image, and (iii) repositioning, by actuating the plurality of rotatable joints, the camera from the first position to the second position. The method further includes capturing the second image.

Methods and systems for improved quality inspection of products using a robot

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Sunnyvale, CA, United States of America

Tao Liu