Infineon Technologies Ag

Tao Hong

Juergen Hoegerl

Christian Schweikert

Adrian Lis

Matthias Rose

Markus Thoben

Oliver Markus Kreiter

Ajay Poonjal Pai

Tino Karczewski

Matthias Lassmann

A power semiconductor module includes: first and second substrates; at least one power semiconductor die arranged between and thermally coupled to a first side of each substrate, and electrically coupled to the first side of the first substrate; at least one rivet having a first end arranged on and electrically coupled to the first side of the first substrate; and an encapsulant encapsulating the at least one power semiconductor die, the at least one rivet and the substrates. At least parts of a second side of the substrates are exposed from the encapsulant. A second end of the at least one rivet is exposed at the encapsulant and configured to accept a press fit pin such that the at least one power semiconductor die can be electrically contacted from the outside.

Power semiconductor module with rivet or press fit pin and method for fabricating the same

A double-sided coolable semiconductor package includes an upper electrically conductive element having an outwardly exposed metal surface, a lower carrier substrate having an upper electrically conductive layer, a lower electrically conductive layer having an outwardly exposed surface, and an electrical insulation layer arranged between the electrically conductive layers, a first electrically conductive spacer arranged between the upper electrically conductive element and the upper electrically conductive layer, a power semiconductor chip arranged between the upper electrically conductive element and the upper electrically conductive layer, a second electrically conductive spacer arranged between the upper electrically conductive element and the chip, and power terminals arranged along a first side of the package. A second power terminal is arranged between first and third power terminals. The first and third power terminals are configured to apply a first supply voltage. The second power terminal is configured to apply a second supply voltage.

Semiconductor package having symmetrically arranged power terminals and method for producing the same

A circuit arrangement has a populated circuit carrier and includes a flat insulation carrier having a top side and a patterned metallization layer on the top side and a first power semiconductor chip arranged on a first section of the metallization layer. The first power semiconductor chip has a first lower chip load terminal electrically conductively connected to the first section. A shunt resistor is arranged on a second section of the metallization layer. The shunt resistor has a lower main terminal electrically conductively connected to the second section. An electrically conductive connection is provided between the first section and the second section. The electrically conductive connection includes a constriction between the first section and the second section so that a current which flows between the first lower chip load terminal and the lower main terminal during operation of the circuit arrangement must pass through the constriction.

Circuit arrangement with shunt resistor

A power semiconductor device includes a power transistor including a plurality of transistor cells on a semiconductor die. At least some of the transistor cells are inhomogeneous by design so that the number of current filaments in the transistor cells with reduced local current density increases and fewer transient avalanche oscillations occur in the power transistor during operation.

Inhomogeneous power semiconductor devices

A pressure chamber has first and second housing elements and first and second chamber regions. The pressure chamber is loaded with a first part, a second part, a connecting means and a sealing means. The connecting means is arranged in the first chamber region. The loaded pressure chamber is placed into a receiving region. The first housing element is pressed against the second housing element so that the pressure chamber is clamped with the aid of a working cylinder between the working cylinder and a holding frame. In the clamped state, a second gas pressure, which is higher than a first gas pressure in the first chamber region, is generated in the second chamber region. In this way, the first part, the second part and the connecting means are pressed against one another within the pressure chamber.

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Soest, Germany

Tao Hong