Micron Technology Incorporated

Tao D Nguyen

Jordan D Greenlee

Rajasekhar Venigalla

John Mark Meldrim

Stephen W Russell

Santanu Sarkar

Kevin Lee Baker

Patrick M Flynn

Ahmed Nayaz Noemaun

Aaron Kenneth Belsher

Efe Sinan Ege

Josiah Jebaraj Johnley Muthuraj

Davis Weymann

Some embodiments include an integrated assembly having a pair of substantially parallel features spaced from one another by an intervening space. A conductive pipe is between the features and substantially parallel to the features. The conductive pipe may be formed within a tube. The tube may be generated by depositing insulative material between the features in a manner which pinches off a top region of the insulative material to leave the tube as a void region under the pinched-off top region.

Methods of forming conductive pipes between neighboring features, and integrated assemblies having conductive pipes between neighboring features

Methods, systems, and devices for a low resistance crosspoint architecture are described. A manufacturing system may deposit a thermal barrier material, followed by a first layer of a first conductive material, on a layered assembly including a patterned layer of electrode materials and a patterned layer of a memory material. The manufacturing system may etch a first area of the layered assembly to form a gap in the first layer of the first conductive material, the thermal barrier material, the patterned layer of the memory material, and the patterned layer of electrode materials. The manufacturing system may deposit a second conductive material to form a conductive via in the gap, where the conductive via extends to a height within the layered assembly that is above the thermal barrier material.

Low resistance crosspoint architecture

Some embodiments include an integrated assembly having an insulative mass over a conductive base structure. A conductive interconnect extends through the insulative mass to an upper surface of the conductive base structure. The conductive interconnect includes a conductive liner extending around an outer lateral periphery of the interconnect. The conductive liner includes nitrogen in combination with a first metal. A container-shaped conductive structure is laterally surrounded by the conductive liner. The container-shaped conductive structure includes a second metal. A conductive plug is within the container-shaped conductive structure. Some embodiments include methods of forming conductive interconnects within integrated assemblies.

Conductive interconnects suitable for utilization in integrated assemblies, and methods of forming conductive interconnects

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Boise, ID, United States of America

Tao D Nguyen